UPC2776 Search Results

TRANSISTOR BO 345

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The ^¡PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2776T 5 V -B IA S SILICON MMIC AMPLIFIER 2.7 GHz WIDEBAND, 23 dB GAIN, MEDIUM OUTPUT POWER DESCRIPTION ¿¡PC2776T is a silicon m onolithic integrated circuit designed as w ideband, medium output am plifier.

Contextual Info: PRELIMINARY DATA SHEET 5 V, SUPER MINIMOLD UPC2776TB SILICON MMIC WIDEBAND AMPLIFIER FEATURES_ • WIDE FREQUENCY RESPONSE: 2.7 GHz • FLAT GAIN RESPONSE: ±1.0 dB • HIGH GAIN: 23 dB • MEDIUM OUTPUT POWER: PidB: 6.0 dBm at 1.0 GHz

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2776T 5 V -B IA S SILICON MMIC AMPLIFIER 2.7 GHz WIDEBAND, 23 dB GAIN, MEDIUM OUTPUT POWER D E S C R IP T IO N /¿PC2776T is a silicon m onolithic integrated circuit designed as w ideband, medium output am plifier.

MMIC WIDE-BAND AMPLIFIER sot-363

Contextual Info: PRELIMINARY DATA SHEET 5 V, SUPER MINIMOLD UPC2776TB SILICON MMIC WIDEBAND AMPLIFIER GAIN vs. FREQUENCY FEATURES 30 • WIDE FREQUENCY RESPONSE: 2.7 GHz • FLAT GAIN RESPONSE: ±1.0 dB 25 • MEDIUM OUTPUT POWER: P1dB: 6.0 dBm at 1.0 GHz • 5 V SINGLE SUPPLY VOLTAGE

transistor t06

Abstract: t06 TRANSISTOR UPC2776 UPC2776T UPC2776T-E3
Contextual Info: PRELIMINARY DATA SHEET 2.7 GHz SILICON MIMIC WIDE BAND AMPLIFIER UPC2776T FEATURES GAIN vs. FREQUENCY WIDE FREQUENCY RESPONSE: 2.7 GHz • FLAT GAIN RESPONSE: ±1.0 dB • HIGH GAIN: 23 dB • MEDIUM OUTPUT POWER: P1dB: 6.0 dBm @ 1.0 GHz • 5 V SINGLE SUPPLY VOLTAGE

"package marking" 564

Abstract: PF 1002 transistor c 548 UPC2776T UPC2776TB UPC2776TB-E3
Contextual Info: 5 V, SUPER MINIMOLD UPC2776TB SILICON RFIC WIDEBAND AMPLIFIER GAIN vs. FREQUENCY FEATURES 30 • WIDE FREQUENCY RESPONSE: 2.7 GHz • FLAT GAIN RESPONSE: ±1.0 dB 25 • MEDIUM OUTPUT POWER: P1dB: 6.0 dBm at 1.0 GHz • 5 V SINGLE SUPPLY VOLTAGE • SMALL SURFACE MOUNT PACKAGE: SOT-363

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D ESC R IPTIO N The ¿iPC2776TB is a silicon monolithic integrated circuits designed as w ideband amplifier. impedance near 50 Q in HF band, so this 1C suits to the system of HF to L band.

Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2776TB 5 V, SUPER MINIMOLD SILICON RFIC WIDEBAND AMPLIFIER FEATURES GAIN vs. FREQUENCY 30 • WIDE FREQUENCY RESPONSE: 2.7 GHz • FLAT GAIN RESPONSE: ±1.0 dB • HIGH GAIN: 23 dB • MEDIUM OUTPUT POWER: P1dB: 6.0 dBm at 1.0 GHz

Analog devices marking Information

Abstract: UPC2776TB-E3 sot-363 marking 576 amplifier TRANSISTOR 12 GHZ RF TRANSISTOR 1.5 GHZ transistor amplifier 2.5 ghz 18 marking RF power amplifier all ic datasheet in one pdf file TRANSISTOR 80 GHZ DATA SHEET OF IC 715
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC2776TB 5 V, SUPER MINIMOLD SILICON RFIC WIDEBAND AMPLIFIER GAIN vs. FREQUENCY FEATURES 30 • WIDE FREQUENCY RESPONSE: 2.7 GHz • FLAT GAIN RESPONSE: ±1.0 dB • HIGH GAIN: 23 dB • MEDIUM OUTPUT POWER: P1dB: 6.0 dBm at 1.0 GHz

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

PC2710TB

Abstract: PC3236TK PC3223TB
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan

PC2776TB

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2776TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^PC2776TB is a silicon monolithic integrated circuits designed as wideband amplifier. This amplifier has impedance near 50 Q in HF band, so this 1C suits to the system of HF to L band. This 1C is packaged in super

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

SOT-26

Abstract: t06 sot 23 SOT26 upc2713t UPC1678G
Contextual Info: Wideband Amplifiers 'V - v î tigmr- U14mb ï* ' < *ttm • TTTV. - Vec V MIN | NF (dB) Icc (mA) TYP M A X TYP Gain (dB) MIN TYP M AX R L out (dB) (dB) TYP TYP PldB (dBm) TYP ISO L (dB) TYP «<* «04» ¿¡SSL 4 •1 * J ! '. UPC1675G 1900 5 12 17 22 5.5

PC2710TB

Abstract: ro4003 PC3223TB marking c3j
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μPC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.