UPD65 Search Results

50A47

Contextual Info: UPD65646GJ-171-3EB 1/5 IL16 * NETW-VCP INTERFACE 61 GND VDD GND VDD GND 70 GND VDD 91 80 90 –TOP VIEW– 60 GND GND GND 100 GND 50 VDD GND 110 GND 40 VDD 30 GND VDD GND VDD GND 20 1 120 10 VDD GND GND 31 UPD65646GJ-171-3EB (2/5) 2 VA0 3 VA1 4 VA2 38

CAL 3300

Contextual Info: IC d e p e n d e n c e of oscillating uPD65949GJ-0S07 FCR4.0MC5 - STD 'v item IC N 0 ^ \ a. [V] V1H/V1L LLL 2.5 CCC 2.6 HHH 2.6 b. Room Vdd Rd [V] V2H/V2L 3.5 3.5 3.5 c. [MHz] d. characteristics Temp. [V] 3 . 3 [ohm] 3 3 0 0 [uS] m e. item f. a~e [V] g.

CD 1691 CB

Abstract: RCR32 9948 UPD65840GJ
Contextual Info: UPD65840GJOSO9 - HHL Rf [Mohín] 1 FCR32.0M2G Vdd= 3.3 CV] Fig.a-d Ta= 20 Cdeg] -• Typ ic a 1 a. V1H/V1L 7 CV] 5 3 1 -1 1- 1 7 5 1 1 1 b. V2H/V2L I 3 V2H 1 -1 " V n. r Vci L c. .5 .3 8 i •i i 1 d. 1 i i 1 1 1 1 1 3.3 1 1 i I I 3.2 .1 1 1 .2 1

Contextual Info: uPD65949GJ-0S07 - HHH FCR50.8M2G T a = 2 0 [deg] G a. 7 V1H/V1L 0 T y p i cal * Worst [V] 5 3 1 -1 b. 7 V2H/V2L V1H »- V1L 0“ V2H 8- [V] 5 3 1 ~ -1 .5 .3 .1 c. F o s c 1 LX1 - : 1 - .3 - .5 400 : d . Tr i se 1 CuS] 1 1 300 200 100 G0 -e_ i _ e. D u t y

Tbb 38

Abstract: bj 2955
Contextual Info: UPD65840GJOSO9 - HHL Rf CMohml 1 FCR33.8BM2G Vdd- 3.3 CV3 CFig.i-d Ta« 20 Cdeg] Typical CL1/CL2 tpFl Lowhng cap&cltMce CLl/CL2) dependence of oscil Iit ing character! sties (CL1«CL2) UPD65840GJOSO9 - HHL CL1/CL2 CpF] 10 / 10 Rf CMohm] 1 7 5 3 a. V1H/V1L

Contextual Info: Vdd uPD65949GJ-OSO7 OSIA 3 OSOA 2 Rd:1500 FCR8.0MC5 1 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=20/20pF +/-20% Oscillating circuit for evaluation

Contextual Info: Vdd uPD65949GJ-OSO7 OSIA 3 OSOA 2 Rd:3300 FCR4.0MC5 1 V1H/V1L 3 V2H/V2L CL1 CL2 2 *BUILT-IN LOADING CAPACITOR CL1/CL2=30/30pF +/-20% Oscillating circuit for evaluation

Contextual Info: Vdd uPD65949GJ-OSO7 OSIA 3 OSOA 2 FCR50.8M2G 1 2 V1H/V1L V2H/V2L Oscillating circuit for evaluation

FCR16

Contextual Info: uPD65949GJ-0S07 - HHH-CL Rd [ohm] 330 V d d = 3.3 F C R 1 G .9 3 M 2 G [V] Fig.a-d Ta = 20 [deg] Typ ical a. V 1 H / V 1 L 7 [V] - - 5 3 1 -1 2.2 V1H •— .4 V1L •— 2.6 5 V/DLI 3.4 3 1 -1 c. .5 2.8 2.3 -.1 i -.1 -.1 3.4 3.4 i i i i 3.4 - 1 1 Fosc i

UPD65840GJOSO9

Contextual Info: IC dependence of oscillating characteristics uPD65840GJOSO9 FCR8.0MC5 - STD Room Temp. Vdd CV3 3.3 item a*e UPD65840GJOSO9 - HHL Rf CMohm] 1 FCR8.0MC5 Ta« 20 Cdeg] Typical ? . a. V1H/V1L CV3 5 m 3 1 -1 5 ,i 1 > 5 . 3.3 V1H S=-3 1 -I 7 b. V2H/V2L CV1

tcl tv 21

Abstract: FCR16
Contextual Info: IC dependence of oscillating characteristics uPD65840GJOSO7 FCR16.0M2G - STD >. itet IC NO a. IV] V1H/V1L LLS 3.8 CCH 3.6 HHL 3.5 -.7 b. M c. V2H/V2L 3.4 -.2 3.4 -.2 -.1 3.5 -.7 Room Temp. Vdd CV] 3.3 -.1 * [MHz] d. CuS] e. m item a~e f. CV] fl. CV] Fo*c

33av

Abstract: tdb 158 CB346
Contextual Info: IC dependence of oscillating characteristics uPD65840GJOSO9 FCR8.0M5 STD Room Vdd Temp. CV] 3.3 item a~e> CL1/CL2 CpFJ 22 / 22 Rf CMohm] 1 UPD65840GJOSO7 - HHL CL1/CL2 CpF] 22 / 22 -fi- — < X Mi l 1 1 -I 7 S 3 1 -I .5 .3 .1 -.1 -.3 -.5 400 0-0 Typical

Contextual Info: IC dependence of oscillating characteristics uPD65840GJOSO9 FCR4.0MC5 - STD Room Temp. Vdd CV] 3.3 item a*e UPD65840GJOSO9 - HHL Rf CMohm] 1 FCR4.0MC5 Ta- 20 Cdeg] Typical »-— •» Worst o 7 5 3 a. V1H/V1L - 1 -I 7 S V,L ? — b. V2H/V2L CV] f - —+

Contextual Info: UPD65808GN-056-LMU 1/2 IL22 * C-MOS GATE ARRAY 121 GND GND 125 130 GND 140 135 GND GND VDD (+5 V) GND VDD (+5 V) 145 150 155 160 165 175 170 GND VDD (+5 V) 185 GND 181 GND GND 180 —TOP VIEW— 120 VDD (+5 V) GND GND 190 115 110 GND 195 200 GND

tdb 158

Abstract: FCR16
Contextual Info: IC dependence of oscillating characteristics uPD65840GJOSO9 FCR16.0M2G - STD \ lt«l IC M o \ a. m V1H/V1L US 3.5 CCH 3.4, HHL 3.4 -.3 b. m c. V2H/V2L 3.4, .2 3.4, -.3 .2 3.5, -.4 Room Temp. Vdd CV3 .1 * crttt] d. CuS] a. 3.3 m item a~e f. M g. m Fo*c Trise

uPD65

Abstract: b0031
Contextual Info: IC d e p e n d e n c e uPD65 FCR6.0MC5 - STD of o s c i l l a t i n g Room Vdd characteristics Temp. [V] 3 item a-e uPD65 - HH FCRG.0MC5 Ta= 20 [deg] G- 0 7 a. V1H/V1L [V] *- * Typical Worst 5 3 1 -1 7 5 3 1 -1 .5 .3 .1 1 -.3 -.5 4 00 300 200

S483

Abstract: uPD65
Contextual Info: IC d e p e n d e n c e uPD65 FCR3.G4MC5 - STD of o s c i l l a t i n g characteristics R o o m Temp. Vdd [V] 3 item a - e uPD65 - HH FCR3.B4MC5 T a = 2 0 [ deg] G-0 7 a. V 1 H / V 1 L [V] Typical *-* W o r s t 5 3 1 -1 7 5 3 1 -1 .5 .3 .1 1

JIS-350

Contextual Info: uPD65949GJ-0S07 - HHH F C R 3 3 . 8GM2G Vd d = 3 . 3 [V] F ig .a ~ d Ta= 20 [deg] •- • T y p i c a l ? a. V1H/V1L [V] - - VIII 2 3 °i 8 'n 11 2.9 - .1 - . 2 - . 2 - . 1 i i i 3.3 3.3 3.2 3 .1 .3 i - 2.7 2 .8 i i i _ 1— 1 > 1 1 b. , V1L ,

uPD65

Contextual Info: 6,10 11 3,9,12-14 Vdd uPD65 XIN 8 XOUT 7 FCR6.0MC5 1 3 V2H/V2L CL1 CL2 2 *Built-in Loading Capacitor 30pF +/-20% 1UEKNNCVKPI EKTEWKV HQT GXCNWCVKQP

46a7

Contextual Info: UPD65B40GJOSO9 - HHL CL1/CL2 CpF] 22 / 22 Rf CMohm] 1 >. VIH/VIL 7 O»-0 Typical »- -— i* Worst - 5 3 1 -1 5 3 1 -1 [V] FCR9.0M5 Ta» 20 Cdeg] V III — -— ft— — 8 — M . . .# V IL b. V2H/V2L CV] * V2H 0 -VEL c. Fose ? tai . ék t I Ç 408

Contextual Info: UPD65810GD-047-LML 1/2 IL22 * C-MOS GATE ARRAY 165 105 110 115 120 125 130 135 140 145 150 VDD (+5 V) GND GND 160 GND VDD (+5 V) 157 GND GND 156 155 —TOP VIEW— 104 VDD (+5 V) 100 GND 95 170 90 175 85 180 GND VDD (+5 V) GND VDD (+5 V) 185 75

Contextual Info: IC dependence of oscillating characteristics uPD65840GJOSO9 FCR4.0M5 - STD Room Temp. Vdd CVD 3.3 item a~e uPD65840GJOSO9 - HHL CL1/CL2 CpF3 33 / 33 Rf CMohm] 1 - V1H/V1L v/iuguli a. 5 V1H Ì -1 7 .— b. V2H/V2L m V2H • 3 60 -• • 1 ^ 1 ft - •

CV 203

Abstract: 9779 FCR16 UPD65630 15.9750
Contextual Info: V2H/V2L [V ] UPD65630.X2 HHC FCR1G. 0M2G LMT Vdd CV] 5 Rf CMohm] 1 CL2 ; ; 5 pF i 10 pF 15 pF 22 pF 33 pF 5.3 5.3 47 pF CL1 5.2 5.3 5.2 5.4 5 pF .3 -.1 5.3 .3 5.B .1 5.3 .2 5.3 .3 5.B 5.4 10 pF .4 .4 5.3 .3 5.2 0.0 5.3 .2 5.3 .3 5.6 5.4 15 pF .4 -.1 5.3 5.2

RCR32

Abstract: 9948 IC AN 8249 534256
Contextual Info: U PD 65B 40G JO SO 7 - HHL V dd- 3 .3 m F C R 3 2 . 0M2G F lg .a - d T a - 2 0 C deg] T y p ic a l a i/C L 2 C pFl Lading c«picitance(CLl/CL2) dependence of cs c illitf ng chtricteri»tfci CCLI-Q-2 ) IC dependence of oscillating characteristics UPD65840GJOSO7