MRF325
Abstract: BH rn transistor
Contextual Info: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF325 T h e R F L in e 30 W - 225-400 MHz CONTROLLED "Q " BROADBAND RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed p rim a rily fo r w ideband large-signal o u tp u t and d riv e r NPN SILICON
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mrf325bh rn transistor |
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MRF325
Abstract: MRF-325
Contextual Info: MOTOROLA Order this document by MRF325/D SEMICONDUCTOR TECHNICAL DATA MRF325 . . . designed primarily for wideband large–signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 30 Watts
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mrf325/dmrf325mrf-325 |
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erie redcap capacitors
Abstract: MRF325 Diode Motorola 316 VK200 MRF-325 transistor HFE 400 1w
Contextual Info: MOTOROLA Order this document by MRF325/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF325 . . . designed primarily for wideband large–signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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mrf325/dmrf325erie redcap capacitorsdiode motorola 316+3vk200mrf-325transistor hfe 400 1w
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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MHW707-2
Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar
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714u/1mhlw8000mhw707-2mhw707-1+8mrf947t1 equivalentmhw704cr2428mhw591mhw592mhw593mhw707mrf861
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2phx11136q-17motorola transistors mrf 947trimpots 3296transistor c5386+71n47402n5591 motorola2n5688cq 542 transistor npn motorolaequivalent transistor of 2sc3358hb215/dic cd 2399 gp
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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sg73/dtriac zd 6071n5204ca2820 trw+72n4427 equivalent bfr912n6823842 317 so8bd243 pinoutbd529bf506bf845
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2N4427 equivalent bfr91
Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability
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powes3666mrf38662n28572n3866+162n5943mrf904mrf5712n49582n31602n55832n4427 equivalent bfr91bfr90 equivalent2n5503mra1600-30tpv-595a2n3553 equivalentmrf477 equivalentmra0500-19l2n6084 equivalentmotorola transistor mrf239
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56-590-65
Abstract: MRF325 jmc 5201 565-9065
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 30 Watts
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mrf32556-590-65jmc 5201565-9065 |
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tp2304
Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12
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am1214-100am1214-200am1214-325am80912005+16am80912015am80912030am80912085am80912150am81214006am81214015tp2304tpv3100tp9383tp2330mrf2001pt9783pt9780tp8828fbly93amrf 406 application circuit
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MRF648
Abstract: TPV3100 TPV-3100 TP9383 SD1393 MRF238 MOTOROLA MRF188 TP9380 mrf10500 mrf422
Contextual Info: June 1999 ST CROSS REFERENCE WITH MOTOROLA INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE INDUSTRY PART NUMBER ST REPLACEMENT PREFERENCE 2N5944 SD1134 MRF859 SD1423 2N5945 2N5946 2N6082 2N6084 2N6439 MHW912 MHW914 MHW916 MRA1600-2 MRF134 MRF136 MRF136Y MRF137
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2n5944sd1134mrf859sd1423+162n59452n59462n60822n60842n6439mhw912mrf648tpv3100tpv-3100tp9383sd1393mrf238 motorolamrf188tp9380mrf10500mrf422
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MRF648
Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC
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2n59442n59452n59462n6082+162n60842n64392sc12572sc12582sc12592sc1605amrf648tpv31002sc2897macomtp3034sd1393tp3008tp9383transistor 2sc636mrf255 equivalent
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2SC636
Abstract: 2sc635 MHW820-1 TP3008 2SC2897 SD1477 2sc2652 TP3034 2SC1804 SD1470
Contextual Info: POWER RF CROSS REFERENCE INDUST RY STANDARD 2SC1257 2SC1258 2SC1259 2SC1605A 2SC1729 2SC1804 2SC1805 2SC1946 2SC1946A 2SC1967 2SC1968A 2SC2082 2SC2100 2SC2101 2SC2102 2SC2103A 2SC2105 2SC2181 2SC2282 2SC2290 2SC2420 2SC2508 2SC2510 SC2628 2SC2629 2SC2630 2SC2642
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2sc12572sc12582sc12592sc1605a+152sc17292sc18042sc18052sc19462sc1946a2sc19672sc6362sc635mhw820-1tp30082sc2897sd14772sc2652tp3034sd1470
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2N3866 MOTOROLA s parameters
Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro
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17a-0105a-01mrf5252n4428+14o-205ad2n5160f2n3866mrf3132n3866 motorola s parameters2n3866 motorola2n2857 motorola145a-09motorola selection mrf237mrf229mrf5362n3553 motorolatransistor 2n3866to205ad
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MRF306
Abstract: 2N3866 2N6166 2n5643 transistors for oscillators uhf mrf313a 2N5641 MRF905 2n3866 211 2N5636
Contextual Info: f Device Type ^ Pout O utput Power Watts g PE Power Gain dB Min. V cc Supply Voltage Volts Package 10 10 8.4 8.2 7.6 6.0 28 28 28 28 28 28 TO-39 TO-39 144B-04 145A-07 145A-07 211-10 A 10 10 16 Typ 16 (Typ) 12 6.2 11 5.7 9.0 10 4.6 6.0 6.0 8.0 8.0 28 28 28
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2n38662n35532n5641144b-04+1145a-072n56432n6166mrf50907a-01mrf306transistors for oscillators uhfmrf313amrf9052n3866 2112n5636
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chw marking sot23
Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu
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chw marking sot23sps 1951 transistortrimmer electron 3296bw 9028+2transistor smd marking ba rnph 4148 zener diode
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
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jmc 5201
Abstract: 5659065 565-9065 jmc 5501 56-590-65 VK200-19
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal output and driver amplifier stages in 100 to 500 MHz frequency range. • • Specified 28 Volt, 400 MHz Characteristics —
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mrf325jmc 52015659065565-9065+3jmc 550156-590-65vk200-19
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VK200-19/4B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed prim arily lo r wideband large-signal output and driver am plifier stages in 100 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —
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mrf325vk200-19/4b |
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TO205AD
Abstract: 2N3866 MOTOROLA TO-205AD MRF525 MRF309 MOTOROLA TO205AD MRF5174 MRF390 2N3866 2N4428
Contextual Info: IF PRODUCTS — BIPOLAR POWER TRANSISTORS continued CASE 79-02 TO-205AD (TO-39) CASE 145A-09 (.300” Stud) CASE 215-02 CASE 244-04 (.280" Stud) CASE 79-03 (TO-205 Type) CASE 305-01 (.204" Stud) CASE 305A-01 (.204” Pill) 3ASÊ 316-01 For UHF Applications
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o-205ado-20505a-01mrf313+132n6439t0-205mrf5252n44282n5160fto205ad2n3866 motorolato-205admrf309motorola to205admrf5174mrf3902n3866
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MRF536
Abstract: MRF515 MOTOROLA SELECTION mrf237 mrf237 MOTOROLA 2N3866 MOTOROLA 2N3866 MOTOROLA s parameters s-parameter 2N4427 MRF227 MRF229 MRF237
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro
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17a-0105a-01mrf5252n4428+14o-205ad2n5160f2n3866mrf313mrf536mrf515motorola selection mrf237mrf237 motorola2n3866 motorola2n3866 motorola s parameterss-parameter 2n4427mrf227mrf229mrf237
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mrf502 gold transistor
Abstract: Motorola transistors MRF630 2N3948 transistor 2n4959 BFR96 MRF2369 MRF525 MRF536 MRF931 MRF911
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro
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17a-0105a-01mrf5252n4428+13o-205ad2n5160f2n3866mrf313mrf502 gold transistormotorola transistors mrf6302n3948transistor 2n4959bfr96mrf2369mrf536mrf931mrf911
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MRF309
Abstract: 2N3866 MOTOROLA mrf237 MOTOROLA MRF390 TO205AD motorola mrf237 MRF227 MRF329 MRF5177 MRF604
Contextual Info: RF SMALL-SIGNAL TRANSISTORS continued Class C Amplifiers T he transistors listed in th ese tab les a re specified for operation in C lass C RF p ow er a m p lifie r circuits. The tables a re arrang ed by increasing frequency of operation first, then by increasing output pow er.
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mrf229mrf6042n4427mrf553+15317d-01mrf6072n62552n3553mrf237mrf207mrf3092n3866 motorolamrf237 motorolamrf390to205admotorola mrf237mrf227mrf329mrf5177
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1phx11136q-14a5 gne mosfetjo35012n4427 equivalent bfr91+72n5032n5160 motorolabf431bfr96hy 1906 transistorjo2015kd 2060 transistor
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