MPQ3467 Search Results

ic Lb 598 d

Abstract: MPQ3467 D 1879 transistor 2N3467 transistor N 343 AD Lb 598 d rfl3
Contextual Info: MPQ3467 SILICON QUAD D UAL IN-LINE PNP SILICO N AN N ULAR MEMORY D R IV E R TRA N SISTO R S QUAD DUAL-IN -LINE PNP SILICO N M EM ORY D R IV E R TR A N SISTO R S . . . designed for medium-current, high-speed switching, ferrite core and plated w ire memory driver, and MOS translator applications.

pq3467

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MPQ3467 PNP Silicon Motorola Preferred Device fïïl fÌ3Ì [Ì2I ITTI fipl Í71 IT XoJ Lr\J PNP ,r y i r y i UJ L2J IÌJ LU L i] [è] E MAXIMUM RATINGS Rating Symbol Value Unit VCEO -40

MPQ3467

Abstract: 2N3467 TN3467 xl semi
Contextual Info: 2N3467/TN3467/MPQ3467 NATL SEMI CONO 5 3 1 Jl A D I S C RE TE HE D g National . Semiconductor 2 N 3 4 6 7 TL/G/10100-11 S | -r-37- 15 M P Q 3 4 6 7 TL/Q/10100-7 ////// Ey i Bc GOBVEELi * T N 3 4 6 7 u u hSQLlBD TL/G/10100-8 P N P S w itc h in g T r a n s is to r

MPQ3467

Contextual Info: MOTOROW SEMICONDUCTOR TECHNICAL Order this document by MPQ34671D DATA MPQ3467 PNP Silicon MHIMUM MotorolaPretirred Device RATINGS Rating Collector–Emitter Collector–Base Emitter-Base Voltage Voltage Voltage Collector Current — Continuous Symbol Value

2N3467

Contextual Info: 2N3467/TN3467/MPQ3467 ZWÄNational Juâ Semiconductor 2N3467 ^ TN3467 T L /G /1 0 1 0 0 -1 1 ^ ji 1 “ // MPQ3467 37 T L /G /1 0 1 0 0 -7 Bc T L /G /1 0 1 0 0 -8 PNP Switching Transistor Electrical Characteristics Symbol t a = 25°c unless otherwise noted

MPQ3467

Contextual Info: MOTOROLA Order this document by MPQ3467/D SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MPQ3467 PNP Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO

Contextual Info: MPQ3467 Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)1.0 P(D) Max. (W)1.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: MOTOROLA Order this document by MPQ3467/D SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MPQ3467 PNP Silicon Motorola Preferred Device [»i rip nal rm föi ryi ryi Lr-vJ PNP rv n rv i LU LU LU LU LU LU LU MAXIMUM RATINGS Rating Symbol Value Unit

BC237

Abstract: Transistor BC107 PLASTIC PACKAGE BF245
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MPQ3467 PNP Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 PNP 1 2 3 4 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

Contextual Info: M u ltip le B ip o la r T ra n s is to rs — Q u a d .% Davtee Type <v> Mtn MMPQ6502 BOTH 30 V CE SAT % Cob PF M fr ' mA MHz Min Max 0 .5 100 150 200 8 0 .4 10 150 CD7 S O IC -1 6 150 200 8 0 .4 10 150 CD3 T O -1 1 6 m volts d lc /lB & lc Max Configuralion

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

2N2222 pnp

Abstract: 2X PNP TRANSistors PNP 2N3904 2N2222 PIN CONFIGURATION 2N2222 2n3904 225 MP03906 2N3906 2N3906D 2N2222 dip
Contextual Info: Quad Transistors* TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVc b O b v c e o b v e b o ICBO (V) (V) (V) <nA) MIN MIN MIN MAX @ v CBO hpE @ *c (m A ) (V) MIN VC E (5AT) (V) lC <mA) MAX c ob *r (pF) (MHz)

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

BC517 spice model

Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

PIN CONFIGURATION 2N2222

Abstract: 2N2907 NPN Transistor 2N2222 PNP 2N3904 2N2222 pnp 2N3906 MPQ3762 2N3799 DIP 2X PNP TRANSistors MPQ7053
Contextual Info: Quad Transistors* '^ 0 0 TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0W atts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BV c b Q b v c e o b v e b o iCBO * ? v CBO (V) (V) 00 (nA) MIN MIN MIN MAX NFe @*c <rr»A> (V) MIN VCE(SA r) 00 @*c <mA) MAX c ob *T NF

Contextual Info: MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage v CEO Collector-Base Voltage v CBO Emitter-Base Voltage v EBO Collector Current — Continuous 'c Total Device Dissipation a Ta = 25X11) Derate above 25°C Pd Total Device Dissipation (w Tc - 25°C

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK