FREQ125M Search Results
FREQ125M Datasheets Context Search
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Contextual Info: BCW60D Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)32 V(CE)sat Max. (V).55 @I(C) (A) (Test Condition)50m |
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BCW60D Freq125M | |
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Contextual Info: BCX51-6 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45è V(BR)CBO (V)45 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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BCX51-6 Freq125M | |
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Contextual Info: BCW60DL Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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BCW60DL Freq125M q125M | |
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Contextual Info: BCW60C Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)100m Absolute Max. Power Diss. (W)300m’ Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition)32 V(CE)sat Max. (V).55 @I(C) (A) (Test Condition)50m |
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BCW60C Freq125M | |
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Contextual Info: BCW60AR Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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BCW60AR Freq125M q125M | |
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Contextual Info: BCW60BL Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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BCW60BL Freq125M q125M | |
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Contextual Info: BCX70 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)800m Absolute Max. Power Diss. (W)620m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V)550m @I(C) (A) (Test Condition)50m |
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BCX70 Freq125M | |
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Contextual Info: SST5101 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)55 V(CE)sat Max. (V).15 @I(C) (A) (Test Condition)10m |
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SST5101 Freq125M req125M | |
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Contextual Info: KSP70 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition) |
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KSP70 Freq125M | |
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Contextual Info: BCW60BR Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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BCW60BR Freq125M q125M | |
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Contextual Info: BCX70HR Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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BCX70HR Freq125M q125M | |
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Contextual Info: BCX70KLT1 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)200m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).55 @I(C) (A) (Test Condition)50m |
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BCX70KLT1 Freq125M | |
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Contextual Info: BCW60CL Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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BCW60CL Freq125M q125M | |
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Contextual Info: 2NL3799 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. |
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2NL3799 Freq125M | |
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Contextual Info: PT7942 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A) Absolute Max. Power Diss. (W)220 Maximum Operating Temp (øC)175’ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain. |
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PT7942 Freq125M | |
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Contextual Info: MPQ3467 Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)1.0 P(D) Max. (W)1.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) |
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MPQ3467 Freq125M StyleTO-116 | |
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Contextual Info: FZT953 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)140 I(C) Max. (A)5 Absolute Max. Power Diss. (W)3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V).44 @I(C) (A) (Test Condition)4 |
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FZT953 Freq125MÃ | |
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Contextual Info: SMBTA63 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)30 I(C) Max. (A)500m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.5.0k |
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SMBTA63 Freq125M | |
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Contextual Info: MMBTA20LT1 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)100m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)10m |
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MMBTA20LT1 Freq125M | |
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Contextual Info: KST63 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10k h(FE) Max. Current gain. |
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KST63 Freq125M | |
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Contextual Info: BCW60AL Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)32 V(BR)CBO (V)32 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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BCW60AL Freq125M q125M | |
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Contextual Info: PT7947 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)200 I(C) Max. (A) Absolute Max. Power Diss. (W)220 Maximum Operating Temp (øC)175’ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain. |
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PT7947 Freq125M | |
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Contextual Info: 2SC1259 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)36 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.15 h(FE) Max. Current gain. |
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2SC1259 Freq125M Code4-29 | |
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Contextual Info: FMMTA20R Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)330m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)10m |
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FMMTA20R Freq125M | |