MG150Q1JS40 Search Results

DIODE JS.4

Contextual Info: T O SH IB A MG150Q1JS40 TOSHIBA GTR MODULE m SILICON N CHANNEL IGBT <;i t r i m K d n HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .5 ^ s Max. trr = 0.5/iis (Max.) • Low Saturation Voltage • V c E (sa t) = 4*0V (Max.)

Contextual Info: T O S H IB A MG150Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 150Q1JS40 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf= 0.5/*s Max. trr=0.5,MS (Max.) • Low Saturation Voltage

MG150Q1JS

Contextual Info: TOSHIBA MG150Q1JS40 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT MG1 5 0 Q 1 J S 4 0 HIGH PO W E R SW ITCHING APPLICATIONS. C HO PPER APPLICATIONS. • H igh In p u t Im pedance • H igh Speed : t f = 0 .5 /; s M ax. trr = 0.5/^s (Max.) • Low Satu ration V oltage

Contextual Info: MG150Q1JS40 HIGH P O W E R SW ITC H IN G A PPLIC A TIO N S. U n it in m m C H O PPER A PPLIC A TIO N S. H igh In p u t Im pedance H igh Speed : tf= 0 .5 ,u s M ax. t rr = 0 .5 / î s (M ax.) Low S a tu ra tio n V oltage ; v C E (sa t) = 4 ° v (M ax.) E nhancem ent-M ode

Contextual Info: T O S H IB A MG150Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 150Q1JS40 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf= 0.5/*s Max. trr=0.5,MS (Max.) • Low Saturation Voltage

MG150Q1JS40

Contextual Info: MG150Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG150Q1JS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode

MG40001US41

Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
Contextual Info: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50

GT80J101

Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Contextual Info: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412

G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101

GT30J322

Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Contextual Info: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬