MDE01 Search Results

auwm

Abstract: MDE01
Contextual Info: h "7 > M n MDE01 $ /T r a n s is to r s V p n i t ; i ' 3- t / u z ^ h 7 > v 7 ^ 7 U Y Multi Device (Composite Transistor Array) •£ — $ F ÿ ' f 7 ./M otor Driver "7 • i^ ffi^ Ü E I/D im e n s io n s (Unit : mm) 7 > ÿ X Î ¿1 f ÿ 'Î A h V c e (sat) iO h- "7 > V X

Contextual Info: MD-MDE012-0709 AML0603E CHARACTERISTICS Q DC [MHz] L[nH] Q [MHz] Typ. S.R.F. Toler Parts number Min. 100 Rated Resistance [MHz] -ance Current [ohm] [MHz] Typ. 100 100 800 1000 2000 [mA] Typ. AML0603E2N0*T 2.0 B,C,S 4.5 6.5 22 24 38 >10000 0.09 300 AML0603E2N2*T

AMF1608B2450A1T

Abstract: AMF1005B2450AT AMF1608B2450B1T 2400-2500MHz
Contextual Info: MD-MDE013-201212 Multilayer Chip BPF AMF1005B / AMF1608B Series Applications Features • Mobile phone  Ultra Small Size and Low Profile 1.6mm（L）x0.8mm（W）×0.4mm（H） typ.  W-LAN , Bluetooth , etc. 1.0mm（L）×0.5mm（W）×0.4mm（H） typ.

TA6270F

Abstract: MDE01 I9 transistor
Contextual Info: Composite Transistor Arrays<Surface Mounted Types> R OH f l CO LTD SbE ]> • 7020^ 0 0 G7 D 0 1 Type -2 5 TA6270F Type MDE01 A /c ir c u it Vceo (V) -3 1 50 ~ -1 0 0 3 100 Diode Pd (mW) hFE 1.8 -5 0 - 0 .1 500 2,4,7 -1 0 -2 500 1 2 0 -5 6 0 3,5,6 10 500

AMB1005C2450Z10AT

Abstract: AMB1005C2450Z05AT
Contextual Info: MD-MDE014-0912 Multilayer chip balun AMB1005 series Features „ „ „ Applications „ „ Small and Low Profiles Low Insertion Loss 0.6dB typ. /C2450series RoHS Compliant Bluetooth and Wireless LAN module WiMAX and WiBro module. Dimensions (1) Unbalance Port

MDE01

Contextual Info: MDE01 Is "7 > V ^ £ /Transistors M n E 0 1 ti^ h 7 > '> '^ 7 K Multi Device Composite Transistor Array) i —£ K 7 7 /M otor Driver 1 • « * MF 20 pin — ’> 'C , "7 yfjÉH/'Dimensions (Unit : mm) ;u fÿ ÎJ I' h •7 > V J * £ ¿ f é V c e (sat) W I- 7 > v X

TA6270

Abstract: TA6270F MDE02
Contextual Info: Composite Transistors Multi Devices •M F 2 0 SOP Types VCEO (V) Part No. -2 5 25 TA6270F Part No. MDE01 MDE02 Ic ( A / 1circuit) Rbe (KO) - 1 .5 1.5 None VqeO (V) Device No. (A) 1, 8 -5 0 -0 .1 2, 4, 7 -1 0 -2 3, 5, 6 10 2 -1 0 1, 4, 5, 8 2, 3, 6t 7 10

radio specification

Abstract: AMF100540l1810AT AMF100540 AMF100540L2450AT 2400-2500MHz multilayer GHz
Contextual Info: MD-MDE015-1003 Multilayer Chip Low Pass Filters AMF1005L Series Features • Ultra Small Size and Low Profile - AMF100540: 1.0mm L x 0.5mm(W) x 0.4mm(H) typ. - AMF100550: 1.0mm(L) x 0.5mm(W) x 0.5mm(H) typ. • Low Insertion Loss • High Attenuation • RoHS Compliant

Contextual Info: MD-MDE012-201212 Multilayer Chip Inductor AML0603E Series Q L[nH] Parts number Toler [MHz] -ance Min. 100 DC S.R.F. Q [MHz] Typ. Rated Resistance [MHz] Current [ohm] [MHz] Typ. 100 100 800 1000 2000 [mA] Typ. AML0603E2N0*T 2.0 B,C,S 4.5 6.5 22 24 38 >10000

Contextual Info: Composite Transistors Multi Devices • M F 2 0 SOP Types Ic VcEO (V) Part No. -2 5 T A 6 27 0F - 1 .5 None 25 Pd (mW) ( A / c ir c u it ) R b e ( k f ì) l"*FE 8O O / T O T A L 1.5 -3 150— -1 0 0 100 3 D iode Part No. MDE01 MDE02 D evice No. VcEO (V)

AMF100540L

Abstract: AMF100540L2500AT AMF160840D87181AT S1156 AMF160840D87181BT AMF100540L0620AT AMF100540L2450AT 2400-2500MHz
Contextual Info: MD-MDE015-201212 Multilayer Chip LPF AMF1005 L / AMF1608D Series Features Applications • Ultra Small Size and Low Profile  Mobile phone 1.0mm（L）x0.5mm（W）×0.4mm（H） typ.  RF Module 1.0mm（L）×0.5mm（W）×0.5mm（H） typ. Antenna Switch Module

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CA727XFA 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CA727 XFA is 16,777,216 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 128M SDRAM: µPD45128841 are assembled.

Contextual Info: PRELIMINARY DATA SHEET 256MB Unbuffered SDRAM Micro DIMM HB52RF328GB-B 32M words x 64 bits, 1 bank HB52RD328GB-B (32M words × 64 bits, 1 bank) Features Description EO L The HB52RF328GB and HB52RD328GB are a 32M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual

HM5425161BTT

Contextual Info: PRELIMINARY DATA SHEET 128MB DDR SDRAM S.O. DIMM HB54A1288KM 16M words x 64 bits, 1 Bank Features The HB54A1288KM is a 16M × 64 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 4 pieces of 256Mbits DDR SDRAM (HM5425161BTT) sealed in TSOP package and 1 piece of serial EEPROM (2k bits

KY 719

Abstract: 122JK TB163TK TB143TK
Contextual Info: MZ-um ransistors M % i— M ü / T y p e Number List POWER MOSFET 2SK1973F5 .70 2SK2041 . 74 2SK2042 . 75

Contextual Info: PRELIMINARY DATA SHEET 128MB Registered DDR SDRAM DIMM EBD12RB8ALFA 16M words x 72 bits, 1 Bank Description Features The EBD12RB8ALFA is a 16M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 9 pieces of 128M bits DDR SDRAM (EDD1208ALTA) sealed in

Contextual Info: PRELIMINARY DATA SHEET 2GB Registered SDRAM DIMM EBS21RC2ACNA 256M words x 72 bits, 2 banks Description Features The EBS21RC2ACNA is 256M words × 72 bits, 2 banks Synchronous Dynamic RAM Registered Module, mounted 72 pieces of 256M bits SDRAM sealed in

Contextual Info: PRELIMINARY DATA SHEET 2GB Registered SDRAM DIMM EBS21RC2ACNA 256M words x 72 bits, 2 banks Description Features The EBS21RC2ACNA is 256M words × 72 bits, 2 banks Synchronous Dynamic RAM Registered Module, mounted 72 pieces of 256M bits SDRAM (EDS2502ACN) sealed in TCP package. This module

Contextual Info: PRELIMINARY DATA SHEET 256MB Unbuffered SDRAM Micro DIMM HB52RF328GB-B 32M words x 64 bits, 1 bank HB52RD328GB-B (32M words × 64 bits, 1 bank) Description Features The HB52RF328GB and HB52RD328GB are a 32M × 64 × 1 banks Synchronous Dynamic RAM Micro Dual

pin diagram of ic 7494

Contextual Info: PRELIMINRY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE8S Direct RambusTM DRAM SO-RIMMTM Module 256M-BYTE 128M-WORD x 18-BIT Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking

Contextual Info: PRELIMINARY DATA SHEET 64MB Unbuffered DDR SDRAM DIMM EBD64UB6ALF 8M words x 64 bits, 1 Bank Description Features The EBD64UB6ALF is 8M words × 64 bits, 1 bank Double Data Rate (DDR) SDRAM unbuffered module, mounted 4 pieces of 128M bits DDR SDRAM (EDD1216ALTA) sealed in TSOP package. Read and

Contextual Info: DATA SHEET 256MB Registered DDR SDRAM DIMM EBD25RB4ALFB 32M words x 72 bits, 1 Bank Description Features The EBD25RB4ALFB is a 32M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 128M bits DDR SDRAM (EDD1204ALTA) sealed in TSOP package, 1 piece of PLL clock driver, 2 pieces of

EBS52UC8APFA

Abstract: EBS52UC8APFA-75 EBS52UC8APFA-7A EDS2508APTA
Contextual Info: PRELIMINARY DATA SHEET 512MB Unbuffered SDRAM DIMM EBS52UC8APFA 64M words x 64 bits, 2 banks Description Features The EBS52UC8APFA is 64M words × 64 bits, 2 banks Synchronous Dynamic RAM Registered Module, mounted 16 pieces of 256M bits SDRAM (EDS2508APTA) sealed in TSOP package.

2SC4649 N,P

Abstract: 2SC40B UMX13 MDC02 DTA214YU 2S81260 DTA115UK 2sc5073 2sb1107 dta123y
Contextual Info: The Class and Basic Ordering Units for Standard and Semi-standard Products types : 1 standard, (2) semi-standard, and (3) custom. (1) Standard products An inventory of these products is maintained so we can responed to customer orders quickly. (2) Semi-standard products