1030MHZ Search Results

TA0690A

Contextual Info: TAI-SAW TECHNOLOGY CO., LTD. No. 3, Industrial 2nd Rd., Ping-Chen Industrial District, Taoyuan, 324, Taiwan, R.O.C. TEL: 886-3-4690038 FAX: 886-3-4697532 E-mail: tstsales@mail.taisaw.com Web: www.taisaw.com SAW Filter 1030MHz MODEL NO.:TA0690A REV. NO.:3 A. MAXIMUM RATING:

MA04281

Abstract: 1030mhz ta0177a TA0177A Golledge 1030 mhz filter uk 1015
Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Ashwell Park, Ilminster Somerset, TA19 9DX, UK 1030MHz SAW Filter Part No: MA04281 Model: TA0177A REV NO.: 3 A. MAXIMUM RATING: 1.Input Power Level: 10 dBm 2.DC voltage: 0 V

Contextual Info: RFCR2304 RFCR2304 920MHz to 960MHz Single Junction Drop-In Circulator 1030MHz TO 1090MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 1in x 1 in Features  Typical Insertion Loss Less than 0.25dB  Isolation Greater than 23dB  200W Forward and Reverse

Transistor J182

Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

1030mhz

Abstract: 1030 mhz 1030
Contextual Info: JXWBDRO-T-1030 1030MHz DRO Test report is for reference only. TEST REPORT for JXWBDRO-T-1030 Page 1 JXWBDRO-T-1030 1030MHz DRO Technical Specification 1030 Center Frequency MHz ±5 Temperature Stability(ppm /°C) -100 @ 10KHz Phase Noise(dBc) -120 @ 100KHz

1030MHz-1090MHz

Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V
Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

1030mhz

Abstract: 1030
Contextual Info: JXWBDRO-T-1030 1030MHz DRO Test report is for reference only. TEST REPORT for JXWBDRO-T-1030 1 JXWBDRO-T-1030 1030MHz DRO Technical Specification 1030 Center Frequency MHz ±5 Temperature Stability(ppm /°C) -100 @ 10KHz Phase Noise(dBc) -120 @ 100KHz DC Supply(V)

Contextual Info: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

MA04281

Abstract: TA0177A Golledge 1030mhz
Contextual Info: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com 1030MHz SAW Filter Part No: MA04281 Model: TA0177A Rev No: 5 A. MAXIMUM RATING: 1. Input Power Level: 10dBm 2. DC voltage: 0V

Contextual Info: S c h e m a tic : RX TX - 1- 1000pF 2KV XFATM9U—CTxul —4M Ô R1 ,R2,R3,R4: 75 OHMS E le c tr ic a l /7 7 S p e c ific a tio n s: @25°C Isolation Voltage: 1500 Vrms Input to Output Isolation Voltage: 500 Vrms (P 1 + 2 + 3 to P 4 + 5 + 6 ) Turns Ratio: TX 1CT:1CT ±3% RX 1CT:1CT ±3%

JKM-0008NL

Abstract: CT475 JKM-0008 jkm-0009nl
Contextual Info: PulseJack 1x1 Tab-DOWN RJ45 Description: 10/100 Base-TX RJ45 1x1 Tab-DOWN 8-pin Integrated Magnetics Connector, designed to support high volume cost-conscious consumer applications such as: ADSL modems, Cable modems, STB and Video on Demand. Features and Benefits:

transistor SMD 12W MOSFET

Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
Contextual Info: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the

Contextual Info: 1011GN-700ELM 700 Watts – 70% Efficiency Mode-S ELM, Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1011GN-700ELM is a common source, class AB, GaN on SiC HEMT power transistor specifically designed for Mode-S ELM Applications. It is capable of delivering 700 Watts of pulsed peak power

Contextual Info: JXWBLA-T-1000-1200-35-P 1000-1200MHz Low Noise Amplifier Test report is for reference only. TEST REPORT For JXWBLA-T-1000-1200-35-P Page 1 JXWBLA-T-1000-1200-35-P 1000-1200MHz Low Noise Amplifier Technical Specification 1000-1200 Frequency Range MHz Gain(dB)

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 7499021125 LAN-Übertrager WE-RJ45LAN 10/100BaseT LAN-Transformer WE-RJ45LAN 10/100BaseT DATUM / DATE : 2010-06-10 A Mechanische Abmessungen / dimensions :

J00-0045 pulse

Contextual Info: STARJACK TM 1x1 Tab-DOWN RJ45 www.pulseeng.com Description: 10/100 Base-TX RJ45 1x1 Tab-DOWN 8-pin Integrated Magnetics Connector, designed to support high volume cost-conscious consumer applications such as: ADSL modems, Cable modems, STB and Video on Demand.

1030mhz

Abstract: 2TD12 HV400 SM200 1090mhz
Contextual Info: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed

transistor+2146

Contextual Info: MDS-GN-650 ELM Rev 1 MDS-GN-650ELM 650 Watts - 65 Volts, Mode-S ELM Avionics 1030-1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The MDS-GN-650ELM is an internally matched, COMMON SOURCE, class AB GaN on SiC high power transistor specifically designed for Mode-S ELM

7499011222A

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 7499011222A LAN-Übertrager WE-RJ45LAN 10/100BaseT LAN-Transformer WE-RJ45LAN 10/100BaseT DATUM / DATE : 2009-07-08 A Mechanische Abmessungen / dimensions :

HP4395A

Abstract: WE-RJ45 7499011002A
Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 7499011002A LAN-Übertrager WE-RJ45LAN 10/100BaseT LAN-Transformer WE-RJ45LAN 10/100BaseT DATUM / DATE : 2011-11-15 A Mechanische Abmessungen / dimensions :

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 7499211002A LAN-Übertrager WE-RJ45LAN 10/100BaseT PoE LAN-Transformer WE-RJ45LAN 10/100BaseT PoE DATUM / DATE : 2009-07-23

7499211122A

Contextual Info: Spezifikation für Freigabe / specification for release Kunde / customer : Artikelnummer / part number : Bezeichnung : description : 7499211122A LAN-Übertrager WE-RJ45LAN 10/100BaseT PoE LAN-Transformer WE-RJ45LAN 10/100BaseT PoE DATUM / DATE : 2009-07-23

PL611-31

Abstract: p611 31-XXX
Contextual Info: Programmable Quick Turn Clock T M FEATURES •          PIN CONFIGURATION Advanced programmable PLL design Very low Jitter and Phase Noise < 40ps Pk-Pk typical Up to 3 outputs Output frequency up to 200MHz CMOS. o Provides complementary LVCMOS outputs to

Chequers Electronic

Abstract: 1030mhz 1030mhz oscillator 1090mhz oscillator 6725 C 3205 CQ 629 Chequers
Contextual Info: Chequers Electronic China Limited VCSOs (Voltage Controlled SAW Oscillators) No. SGS Report No. Report Date RoHS RoHS-complaint Room 1101-3, Mongkok Commercial Centre, 16 Argyle Street, Mong Kok, Kowloon, Hong Kong SAR, China Tel: (852) 2391-6725 Fax: (852) 2789-3205 Web site: http://www.chequers-electronic.com E-mail: info@chequers-electronic.com