HVVI Search Results

1030MHz-1090MHz

Abstract: Avago 1090mhz signal Anaren anaren mixer 1030mhz airborn TriQuint radiall vco mimix
Contextual Info: Airborne Transponder/DMES Block Diagram: 1030MHz-1090MHz Transmitter PA PRE-DRIVER DRIVER Circulator Isolator H&S RADIALL Cables COUPLER Anaren M/A-COM FINAL Antenna M/A-COM RELL Avago M/A-COM Mimix Peregrine RELL Triquint FreescaleTM HVVi M/A-COM Microsemi

mode 5 IFF

Abstract: HVV1011-300 diode gp 429 hvvi "RF MOSFET" 300W 1030mhz hvv1011 1090mhz RF 1090MHz
Contextual Info: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

HVV0912-800

Abstract: SEMICONDUCTORS INC
Contextual Info: HVV0912-800 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications DESCRIPTION PACKAGE The high power HVV0912-800 device is a high voltage silicon enhancement mode RF transistor

UHF TRANSISTOR

Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
Contextual Info: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V

RTO BH

Abstract: NPN BH RE IY 925 TRANSISTOR transistor marking bh ra transistors 368 & 369
Contextual Info: Die no. D-15 NPN medium power transistor Dimensions Units : mm These are epitaxial planar NPN silicon transistors. SST3 Features 2.9 available in a SST3 (SST, SOT-23) package, see page 300 ± 0.2 1 . 9 * 0.2 collector-to-emitter breakdown voltage, BVCE0 = 45 V (min) at

500W TRANSISTOR

Abstract: hvvi
Contextual Info: HVV1011-500L Product Overview L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating

uhf 150w mosfet

Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
Contextual Info: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

Radar

Abstract: diode gp 429 HV400 hvvi transistor 1150
Contextual Info: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,

Contextual Info: 3-phase, full-wave, motor driver BA6491FS The BA6491 FS is an IC that can be used to control and drive floppy disk drive spindle motors. This IC uses a 3-phase, full-wave drive system. Dimensions Units : mm BA6491FS (SSOP-P32) I36±02 With a built-in digital servo, amplifier

E7 Charging circuit diagram

Abstract: BA7039 peak hold ic IC drum
Contextual Info: BA7039 VCR auto tracking interface The BA7039 is an auto tracking interface device for VCRs. Dimensions Units : mm BA7039 (DIP16) Using the audio or video FM signal, the 1C generates an integral waveform or peak hold voltage that is proportional to the peak detection output.

Contextual Info: PACKAGE H V V0405-175 H igh Voltage, H igh Ruggedness U H F Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle ! For U H F band, Weather and Long Range Radar Applications ! The innovative Semiconductor Company! ! ! ! ! ! ! ABSOLUTE MAXIMUM RATING IEC 134

HVV1012-550

Abstract: 4884 12W 01 TRANSISTOR hvvi
Contextual Info: HVV1012-550 Preliminary Datasheet L-Band High Power Pulsed Transistor 10µs Pulse Width, 1% Duty Cycle For Airborne DME Applications DESCRIPTION PACKAGE The high power HVV1012-550 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed

500W TRANSISTOR

Abstract: HVV1011-500L 500W RF Transistor 1030 MHz
Contextual Info: HVV1011-500L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor

HVV1214-140

Abstract: L-Band 1200-1400 MHz SMD TRANSISTOR PD4 radar circuit ERJ8GEYJ100V L-band RF MOSFET 1030mhz "RF MOSFET CLASS AB
Contextual Info: HVV1214-140 Preliminary Datasheet L-Band Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty Cycle For Ground Based Radar Applications The innovative Semiconductor Company! FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain

westcode scr

Abstract: toko filters westcode diodes TOKO INDUCTORS tyco igbt mitsubishi sic MOSFET KU SERIES CHEMICON capacitor nujira NATIONAL IGBT welding transformer SCR
Contextual Info: 90461431 RF, Microwave Components Your Global Source for RF, Microwave and Power Conversion Products Our valued suppliers Click on the supplier name below to visit their storefront on www.rell.com Richardson Electronics’ RF, Wireless & Power Division designs and distributes

HVV0912-450

Abstract: diode gp 429 TACAN
Contextual Info: HVV0912-450 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulsewidth, 10% Duty Cycle For Ground DME/TACAN Applications DESCRIPTION PACKAGE The high power HVV0912-450 device is a high voltage silicon enhancement mode RF transistor

500W TRANSISTOR

Abstract: hvvi HVV1012-550
Contextual Info: HVV1012-550 Preliminary Datasheet L-Band High Power Pulsed Transistor 10µs Pulse Width, 1% Duty Cycle For Airborne DME Applications DESCRIPTION PACKAGE The high power HVV1012-550 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating

TUBE Light Choke connection diagram

Abstract: UCC29910PW 90W ac adapter schematic PFC buck converter design guidelines 90W laptop adapter Buck PFC Controller buck pfc SLUS923 UCC29910 Laptop universal adapter 90w circuit diagram
Contextual Info: UCC29910 www.ti.com SLUSA04B – DECEMBER 2009 – REVISED JUNE 2010 Buck PFC Controller Check for Samples: UCC29910 FEATURES DESCRIPTION • The UCC29910 Buck Power Factor Correction PFC controller provides a relatively flat high-efficiency performance across universal line for designers

NI-400

Abstract: diode gp 429 HV400
Contextual Info: HVV1012-050 HVV1012-050 HVV1012-050 HVV1012-050 L-Band L-BandAvionics AvionicsPulsed PulsedPower PowerTransistor Transistor HVV1012-050 L-Band Avionics Pulsed Power The innovative Semiconductor Company! L-Band Avionics Pulsed Power Transistor 1025-1150 1025-1150MHz,

ERJ8GEYJ100V

Abstract: Johanson Technology C1206C102K1RACTU C1206C103K1RACTU 445-4109-2-ND 478-2666-1-ND 251R15S
Contextual Info: HVV1012-250 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1025-1150 MHz, 10µs Pulse, 1% Duty Cycle For Airborne DME, TCAS and IFF Applications FEATURES The innovative Semiconductor Company! Silicon MOSFET Technology Operation from 24V to 50V

transistor SMD 12W MOSFET

Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w
Contextual Info: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the

1030-1090MHz

Abstract: 4884 SM200 DS01A
Contextual Info: HVV1011-035 L-Band High Power Pulsed Transistor 1030-1090MHz, 50µs, 5% Duty For TCAS and Mode-S Applications DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating

HVVi Semiconductors

Abstract: SM200
Contextual Info: HVV1214-025 L-Band High Power Pulsed Transistor 1200-1400MHz, 200µs, 10% Duty For Ground Based Radar Applications DESCRIPTION PACKAGE The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed radar applications

1030mhz

Abstract: 2TD12 HV400 SM200 1090mhz
Contextual Info: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed