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TE Connectivity YHV800-2P-90-50M-B Connector Housing Sealed Wire to Board Receptacle 2-Position 10.4mm Right Angle Cable Mount - Bag (Alt: YHV800-2P-90-50M-B)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	YHV800-2P-90-50M-B	Bag			1	1 $147.84 10 $147.84 100 $106.62 1000 $105.04 10000 $105.04	Buy Now
Mouser Electronics	YHV800-2P-90-50M-B		78			1 $183.78 10 $170.06 100 $151.84 1000 $151.84 10000 $151.84	Buy Now
TTI	YHV800-2P-90-50M-B	Each	6		1	1 $177.19 10 $155.12 100 $127.49 1000 $127.49 10000 $127.49	Buy Now
Sager	YHV800-2P-90-50M-B				1	1 $163.06 10 $154.00 100 $154.00 1000 $154.00 10000 $154.00	Buy Now
Interstate Connecting Components	YHV800-2P-90-50M-B					1 $170.59 10 $154.00 100 $115.50 1000 $115.50 10000 $115.50	Buy Now

Avnet Abacus	YHV800-2P-90-50M-B			12 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	YHV800-2P-90-50M-B					1 $158.40 10 $151.89 100 $109.42 1000 $109.42 10000 $109.42	Buy Now
Eaton Corporation TR2-S505H-V-800-R Fuse, PCB Leaded, 800 mA, 600 VAC, 400 VDC, S505H, Time Delay, Axial Leaded - Tape and Reel (Alt: TR2-S505H-V-800-R)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TR2-S505H-V-800-R	Tape & Reel		12 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 $1.63	Buy Now
Mouser Electronics	TR2-S505H-V-800-R					1 - 10 - 100 - 1000 - 10000 $1.63	Get Quote
Avnet Abacus	TR2-S505H-V-800-R	Tape & Reel		16 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Eaton Corporation BK-S505H-V-800-R Fuse, PCB Leaded, 800 mA, 600 VAC, 400 VDC, S505H, Time Delay, Axial Leaded - Bulk (Alt: BK-S505H-V-800-R)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	BK-S505H-V-800-R	Bulk		12 Weeks	100	1 - 10 - 100 $5.64 1000 $3.51 10000 $3.45	Buy Now
Mouser Electronics	BK-S505H-V-800-R		97			1 $11.82 10 $10.38 100 $6.25 1000 $5.33 10000 $5.33	Buy Now
Avnet Abacus	BK-S505H-V-800-R			16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Eaton Corporation 3250HV800-R 3250HV FAST ACTING 0.8A,1000VDC - Tape and Reel (Alt: 3250HV800-R)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	3250HV800-R	Tape & Reel		10 Weeks, 4 Days	2,000	1 - 10 - 100 - 1000 - 10000 $2.50	Buy Now
Mouser Electronics	3250HV800-R					1 - 10 - 100 - 1000 $2.45 10000 $2.38	Get Quote
Avnet Abacus	3250HV800-R	Tape & Reel		14 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TE Connectivity YHV800-2P-90-50M-A Conn Housing Sealed Housing Receptacle 2 POS 23mm RA Cable Mount - Bag (Alt: YHV800-2P-90-50M-A)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	YHV800-2P-90-50M-A	Bag		6 Weeks	1	1 $147.69 10 $147.69 100 $106.45 1000 $103.54 10000 $103.54	Buy Now
Mouser Electronics	YHV800-2P-90-50M-A		5			1 $165.52 10 $150.08 100 $138.98 1000 $138.98 10000 $138.98	Buy Now
TTI	YHV800-2P-90-50M-A	Each	15		1	1 $136.61 10 $132.59 100 $128.70 1000 $128.70 10000 $128.70	Buy Now
Sager	YHV800-2P-90-50M-A				1	1 $160.72 10 $151.79 100 $151.79 1000 $151.79 10000 $151.79	Buy Now
Interstate Connecting Components	YHV800-2P-90-50M-A					1 - 10 - 100 - 1000 - 10000 -	Buy Now

Avnet Abacus	YHV800-2P-90-50M-A			12 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	YHV800-2P-90-50M-A					1 $156.13 10 $149.71 100 $107.85 1000 $107.85 10000 $107.85	Buy Now

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HV800 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
500W TRANSISTOR Abstract: hvvi Contextual Info: HVV1011-500L Product Overview L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating	Original	HVV1011-500L on/18us HVV1011-500L EG-01-PO17X1 500W TRANSISTOR hvvi	PDF
HVV1012-550 Abstract: 4884 12W 01 TRANSISTOR hvvi Contextual Info: HVV1012-550 Preliminary Datasheet L-Band High Power Pulsed Transistor 10µs Pulse Width, 1% Duty Cycle For Airborne DME Applications DESCRIPTION PACKAGE The high power HVV1012-550 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed	Original	HVV1012-550 HVV1012-550 429-HVVi EG-01-PO18X2 4884 12W 01 TRANSISTOR hvvi	PDF
500W TRANSISTOR Abstract: HVV1011-500L 500W RF Transistor 1030 MHz Contextual Info: HVV1011-500L Preliminary Datasheet L-Band High Power Pulsed Transistor 32µs on/18us off x 48, repeated every 24ms For Mode S-ELM Interrogator Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor	Original	HVV1011-500L on/18us HVV1011-500L on/18 HV800 MIL-STD-883, 429-HVVi EG-01-PO17X7 500W TRANSISTOR 500W RF Transistor 1030 MHz	PDF
HVV0912-450 Abstract: diode gp 429 TACAN Contextual Info: HVV0912-450 Preliminary Datasheet L-Band High Power Pulsed Transistor 960-1215 MHz, 10µs Pulsewidth, 10% Duty Cycle For Ground DME/TACAN Applications DESCRIPTION PACKAGE The high power HVV0912-450 device is a high voltage silicon enhancement mode RF transistor	Original	HVV0912-450 HVV0912-450 429-HVVi EG-01-PO35X1 diode gp 429 TACAN	PDF
500W TRANSISTOR Abstract: hvvi HVV1012-550 Contextual Info: HVV1012-550 Preliminary Datasheet L-Band High Power Pulsed Transistor 10µs Pulse Width, 1% Duty Cycle For Airborne DME Applications DESCRIPTION PACKAGE The high power HVV1012-550 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating	Original	HVV1012-550 HVV1012-550 EG-01-PO18X1 500W TRANSISTOR hvvi	PDF
transistor SMD 12W MOSFET Abstract: transistor SMD 12W transistor JE 1090 smd transistor code 12w Contextual Info: H GE PACKAGE FEATURES Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the	Original	HVV1011-600 1030MHz 1090MHz. transistor SMD 12W MOSFET transistor SMD 12W transistor JE 1090 smd transistor code 12w	PDF
HVV1214-250L Abstract: hvvi Contextual Info: HVV1214-250L Product Overview L-Band High Power Pulsed Transistor 2000µs Pulse Width, 10% Duty Cycle For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1214-250L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating	Original	HVV1214-250L HVV1214-250L 1200MHz 1400Mhz EG-01-PO16X1 hvvi	PDF
HVV1011-600 Abstract: hvvi 1090MHZ Contextual Info: HVV1011-600 Preliminary Datasheet L-Band High Power Pulsed Transistor 50µs Pulse Width, 2% Duty Cycle For 1030-1090MHz IFF/TPR/TCAS Applications DESCRIPTION PACKAGE The high power HVV1011-600 device is a high voltage silicon enhancement mode RF transistor	Original	HVV1011-600 1030-1090MHz HVV1011-600 HV800 MIL-STD-883, EG-01-PO15X4 hvvi 1090MHZ	PDF
Contextual Info: DESCRIPTION PACKAGE The high power HVV0912-450 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 960 MHz and 1215 MHz. FEATURES High Power Gain Excellent Ruggedness	Original	HVV0912-450 HV800 MIL-STD-883,	PDF
hvv1011 Abstract: HV400 Radar Transponder HV800 SM200 1030 HVV1011-300 rf power transistors Contextual Info: Product Selection Guide Avionics RF Power Transistors For IFF, TCAS, Transponder/Interrogator Applications Pulse Width = 50us, Duty Cycle = 2% PART NUMBER HVV1011-035 HVV1011-300 HVV1011-600 FREQUENCY (MHz) 1030-1090 1030-1090 1030-1090 VDD (V) 50 50 50	Original	HVV1011-035 HVV1011-300 HVV1011-600 SM200 HV400 HV800 hvv1011 HV400 Radar Transponder HV800 SM200 1030 HVV1011-300 rf power transistors	PDF
J152-ND Contextual Info: EVALUATION KIT >LL'&''#,&&#;A RF Power Transistor Part Number: HVV1011-600 Evaluation Kit Part Number: HVV1011-600-EK Note: The Gerber file can be downloaded at www.adsemi.com for most test fixtures or contact us at sales@adsemi.com Contents: - PCB Component Placement Diagram	Original	HVV1011-600 HVV1011-600-EK 712-1388-1-ND 478-2646-1-ND 399-1222-2-ND 399-1236-2-ND 478-3134-1-ND PCE3484TR-ND HV800 FXT000116 J152-ND	PDF
Contextual Info: DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at 1030 MHz & 1090 MHz using a 2.4ms pulse burst 32 s on/18 s off x 48 repeated every 24ms.	Original	HVV1011-500L on/18 HV800A MIL-STD-883,	PDF
AIRBORNE DME Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12 Contextual Info: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with	Original	HVV1012-550 1025MHz 1150MHz. AIRBORNE DME transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12	PDF

HV800 Search Results

HV800 Price and Stock

TE Connectivity YHV800-2P-90-50M-B

Eaton Corporation TR2-S505H-V-800-R

Eaton Corporation BK-S505H-V-800-R

Eaton Corporation 3250HV800-R

TE Connectivity YHV800-2P-90-50M-A

HV800 Datasheets Context Search

500W TRANSISTOR

HVV1012-550

500W TRANSISTOR

HVV0912-450

500W TRANSISTOR

transistor SMD 12W MOSFET

HVV1214-250L

HVV1011-600

hvv1011

J152-ND

AIRBORNE DME