RADAR Search Results

ro4003 8mil

Abstract: QFN 4X4 aug22
Contextual Info: Advance Product Information Aug.22, 2006 2-20 GHz LNA with AGC TGA2513-SM Key Features • • • • • • • The TGA2513-SM is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures,

Contextual Info: Advance Product Information March 4, 2005 2-20 GHz LNA with AGC TGA2513-SM Key Features • • • • • • • The TGA2513-SM is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures,

Contextual Info: Advance Product Information July 11, 2003 Q-Band Driver Amplifier TGA4042-EPU Key Features • • • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 6 V, Id = 168 mA • Point-to-Point Radio • Military Radar Systems

Contextual Info: TGA2618-SM 16 - 18 GHz GaAs LNA Applications • Commercial and Military Radar  Satellite Communications Product Features          Functional Block Diagram Frequency Range: 16 - 18 GHz NF: 2.3 dB Small Signal Gain: 28 dB Return Loss: >10 dB

Contextual Info: 2729GN-270 Rev 2 2729GN – 270 270 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-270 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF

Contextual Info: OVEN CONTROLLED CRYSTAL OSCILLATOR AOCJY1 Series Pb RoHS Compliant 20.8 x 13.2 x 8.2 mm | | | | | | | | | | | | | | APPLICATIONS: • Cellular Infrastructure • Radar Systems • Test & Measurement Equipment • GPS Tracking with precision hold-over accuracy

P77 transistor

Abstract: 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode
Contextual Info: ,z= i-s L-J =7 f .- an AMP company * z z - = = Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry

RADAR

Abstract: PH1214-25M transistor 25 4 ghz transistor
Contextual Info: Radar Pulsed Power Transistor 25 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-25M PH1214-25M Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor

power amplifier ic ta2040

Abstract: Nokia 6100 LCD TA2040 Transceiver Broadcom 3G RF interfacing 8051 with bluetooth modem Tripath TA2040 AMPLIFIER pixelworks L7205 tft interface with 8051 trw radar ac
Contextual Info: SEMICONDUCTOR TIMES JULY 2000 / 1 JULY 2000 FOCUSED ON EMERGING SEMICONDUCTOR COMPANIES Radar Scope Bay Microsystems Bay Microsystems was recently founded to develop chips. What kind? The company wouldn’t disclose any details to us. One rumor is “high-speed interfaces” whatever

b 595 transistor

Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE
Contextual Info: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

PH1214-220M

Abstract: Radar transistor 220
Contextual Info: Radar Pulsed Power Transistor 220 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-220M PH1214-220M Radar Pulsed Power Transistor - 220 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor

mc68hc908

Abstract: 68HC05 68HC908GT16 68HC908GT8 HC08
Contextual Info: A FLASH MCU SOLUTION 68HC908GT16/GT8 8-bit Microcontroller FEATURES TARGET APPLICATIONS • • • • • • • • Radar detectors Industrial and home lighting Security systems Home appliances Sensors Electronic power meters Wireless communication PDA attachments

3400 transistor

Abstract: transistor 3400 3134-65M
Contextual Info: 3134-65M Rev B 3134-65M 65Watts, 34 Volts, 200us, 10% Radar 3100-3400 MHz GENERAL DESCRIPTION CASE OUTLINE Common Base The 3134-65M is an internally matched, COMMON BASE bipolar transistor capable of providing 65Watts of pulsed RF output power at 200us pulse width,

BLS6G2731-120

Contextual Info: BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1.

BLS6G3135S-120

Abstract: BLS6G3135-120
Contextual Info: BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance

1458

Abstract: L-Band 1200-1400 MHz IC 1458
Contextual Info: 1214 - 300 300 Watts - 50 Volts, 100µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-300 is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred microseconds pulse width, ten percent duty factor across the band 1200 to

PH1214-2M

Abstract: .15 j63 1.5 j63 1035 transistor
Contextual Info: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors

Contextual Info: @SPT SPT77Ó O 8-BIT, 1 GSPS FLASH A/D CONVERTER S/G/VAL PROCESS/NG TECHNOLOGIES FEATURES APPLICATIONS Digital Oscilloscopes Transient Capture Radar, EW, ECM Direct RF Down-Conversion 1:2 Demuxed ECL Compatible Outputs Wide Input Bandwidth - 900 MHz Low Input Capacitance -1 5 pF MQUAD

Contextual Info: @ SPT S P T 7 6 ÌO 6-BIT, 1 GSPS FLASH A/D CONVERTER SIGNAL PROCESSING TECHNOLOGIES APPLICATIONS FEATURES Radar, EW, ECM Direct RF Down-Conversion Microwave Modems Industrial Ultrasound Transient Capture Test and Measurement 1 :2 Demuxed ECL Compatible Outputs

13MM

Abstract: PH3134-2OL transistor f20 PH3134
Contextual Info: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

transistor c36

Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134
Contextual Info: =5= ,-= E -= EF an AMP company * ,- .-z = Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

J37 transistor

Abstract: transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145
Contextual Info: = - an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors

TRANSISTOR Z4

Contextual Info: an AMP company Radar Pulsed Power Transistor, SW, loops Pulse, 10% Duty PHI 214-6M 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors

Contextual Info: 2731-20R1 2731-20 20Watts, 36 Volts, 100us, 10% Radar 2700-3100 MHz GENERAL DESCRIPTION CASE OUTLINE 55KCR-1 Common Base The 2731-20is an internally matched, COMMON BASE bipolar transistor capable of providing 20Watts of pulsed RF output power at 100 pulse width,