BLS6G3135S-120 Search Results

BLS6G3135S-120 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BLS6G3135S-120		NXP Semiconductors	LDMOS S-Band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 43 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 120 W; Package material: SOT502B ; Power gain: 11 dB	Original	PDF	70.5KB	12
BLS6G3135S-120		NXP Semiconductors	LDMOS S-Band radar power transistor	Original	PDF	62.22KB	11
BLS6G3135S-120,112		NXP Semiconductors	LDMOS S-Band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 43 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 120 W; Package material: SOT502B ; Power gain: 11 dB; Package: SOT502B (LDMOST); Container: Blister pack	Original	PDF	70.5KB	12

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Flip Electronics BLS6G3135S-120,112 LDMOS POWER TRANSISTOR - Trays (Alt: BLS6G3135S-120,112)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	BLS6G3135S-120,112	Tray			60	1 - 10 - 100 $308.72 1000 $308.72 10000 $308.72	Buy Now
	BLS6G3135S-120,112	Tray		16 Weeks	60	1 - 10 - 100 $327.36 1000 $296.63 10000 $296.63	Buy Now
Flip Electronics Manufacturing Services BLS6G3135S-120,112 Stock, ship today
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Flip Electronics	BLS6G3135S-120,112		1,054			1 - 10 - 100 - 1000 - 10000 -	Get Quote