BLS6G3135S-120 Search Results
BLS6G3135S-120 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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BLS6G3135S-120 |
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LDMOS S-Band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 43 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 120 W; Package material: SOT502B ; Power gain: 11 dB | Original | 70.5KB | 12 | ||
BLS6G3135S-120 |
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LDMOS S-Band radar power transistor | Original | 62.22KB | 11 | ||
BLS6G3135S-120,112 |
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LDMOS S-Band radar power transistor - Application: S-band radar ; Description: S-band radar LDMOS ; Duty cycle: 10 %; Efficiency: 43 %; Frequency band: 3100-3500 GHz; Operating voltage: 32 VDC; Output power: 120 W; Package material: SOT502B ; Power gain: 11 dB; Package: SOT502B (LDMOST); Container: Blister pack | Original | 70.5KB | 12 |
BLS6G3135S-120 Price and Stock
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Ampleon BLS6G3135S-120,112RF MOSFET LDMOS 32V SOT502B |
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BLS6G3135S-120,112 | Tray |
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Flip Electronics BLS6G3135S-120,112LDMOS POWER TRANSISTOR - Trays (Alt: BLS6G3135S-120,112) |
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BLS6G3135S-120,112 | Tray | 60 |
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Flip Electronics Manufacturing Services BLS6G3135S-120,112Stock, ship today |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLS6G3135S-120,112 | 1,054 |
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