1060MHZ Search Results

Contextual Info: Voltage Controlled Oscillators MW500-1704 1060MHz to 1130MHz Specifications Frequency Tuning Voltage Power Output Phase Noise 1060MHz to 1130MHz 1/4 V 1 +/- 3 dBm 10 kHz Offset 100 kHz Offset Frequency Pushing Frequency Pulling Harmonic Suppression -96 typ dBc/Hz

RX881

Abstract: tx888 tx-88
Contextual Info: Microwave Devices DIELECTRIC FILTERS Part No. Center frequency MHz Band width (MHz) TX836.5 25 RX881.5 25 TX911.5 27 Insertion loss (dB) max. [Temperature range] VSWR 50S! max. Maximum handling power (W) Attenuation (dB) min. Size WxLxT (mm) [inches] Weight

cxd2818er

Contextual Info: Zero-IF Tuner IC for Digital Satellite Broadcast CXD2818ER Description The CXD2818ER is an IC developed for direct orthogonal detection of L band 1 to 2GHz IF signals in a digital satellite broadcast reception tuner. The CXD2818ER incorporates all the functions (RF gain control amplifier, oscillator circuit, wide-band phase

MAX9985

Contextual Info: 19-5307; Rev 0; 6/10 Dual, SiGe, High-Linearity, 1200MHz to 1700MHz Downconversion Mixer with LO Buffer/Switch Features The MAX19993 dual-channel downconverter is designed to provide 6.4dB of conversion gain, +27dBm input IP3, 15.4dBm 1dB input compression point, and a noise

signal generator

Abstract: AN 5522 DC689A LT5522 "Signal Generator" 142-MHz
Contextual Info: DC689A DEMO BOARD QUICK START GUIDE Description: The DC689A demo circuit board is intended to demonstrate the capabilities of the LT5522 highsignal-level downconverting mixer IC for wireless infrastructure applications. The LT5522 Figure 1 is a broadband high signal level active mixer optimized for high linearity

gigafil

Abstract: DFY2R902 DFY2R902CR947 DFY2R DFY2R836CR881BH RX881
Contextual Info: MICROWAVE FILTERS GIGAFIL DUPLEXERS— DFY Series FEATURES • Low insertion loss for using high Q -value dielectric resonators. ■ Small and light for using high dielectric constant ceramics ■ Excellent tem perature stability for tem perature compensated

Contextual Info: FEATURES PACKAGE High Power Gain Excellent Ruggedness 50V Supply Voltage Operation from 24v- 50v high Power Gain Extremely Rugged Internal Input and Output Matching Pb-free and RoHS Compliant TYPICAL PERFORMANCE DESCRIPTION ORDERING INFORMATION REV. B THERMAL/RUGGEDNESS PERFORMANCE

SF0600BA03183S

Contextual Info: 600 MHz SAW Filter 80 MHz Bandwidth Part Number: SF0600BA03183S DESCRIPTION • • • 600 MHz SAW band pass filter with 80 MHz bandwidth. 5mm x 5mm LCC package. RoHS compliant. TYPICAL PERFORMANCE Horizontal: Vertical: Horizontal: Vertical: Frequency Magnitude

Contextual Info: 19-5307; Rev 0; 6/10 Dual, SiGe, High-Linearity, 1200MHz to 1700MHz Downconversion Mixer with LO Buffer/Switch Features The MAX19993 dual-channel downconverter is designed to provide 6.4dB of conversion gain, +27dBm input IP3, 15.4dBm 1dB input compression point, and a noise

mode 5 IFF

Abstract: Coaxicom HVV1011-300 RF 1090MHz hvvi 4884 MOSFET hvv1011 RF MOSFET CLASS AB 100B270JP500X ATC FXT00
Contextual Info: The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V

FET J134

Abstract: JMC5801 1000uf 63V electrolytic capacitor capacitor 470uf/63v 63V 470uf J134 MOSFET description of capacitor 470uf 63v 1060 fet 470uf 63v c06 capacitor
Contextual Info: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

Contextual Info: 600 MHz SAW Filter 80 MHz Bandwidth Part Number: SF0600BA03183S DESCRIPTION • • • 600 MHz SAW band pass filter with 80 MHz bandwidth. 5mm x 5mm LCC package. RoHS compliant. TYPICAL PERFORMANCE Horizontal: Vertical: Horizontal: Vertical: Frequency Magnitude

gigafil

Abstract: DFY2R836CR881BFA DFY2R836CR881 DFY2R836 DFY2R836CR881BFDA DFY2R836CR881BH 933B
Contextual Info: m u F fn tn MICROWAVE FILTERS GIGAFIL DUPLEXERS-DFY Series FEATURES • Low insertion loss for using high Q-value dielectric resonators. ■ Small and light for using high dielectric constant ceramics. ■ Excellent temperature stability for temperature compensated

1030mhz

Abstract: 2TD12 HV400 SM200 1090mhz
Contextual Info: HVV1011-040 HVV1214-075 L-Band Avionics Pulsed Power Transistor HVV1011-040 The innovative Semiconductor Company! HVV1011-040 L-Band Radar Pulsed Power Transistor 1030-1090MHz, 50!s Pulse, 5% Transistor Duty L-Band Avionics Pulsed Power L-Band Avionics Pulsed

cxd2818er

Abstract: EA-PS 9000
Contextual Info: Zero-IF Tuner IC for Digital Satellite Broadcast CXD2818ER Description The CXD2818ER is an IC developed for direct orthogonal detection of L band 1 to 2GHz IF signals in a digital satellite broadcast reception tuner. The CXD2818ER incorporates all the functions (RF gain control amplifier, oscillator circuit, wide-band phase

Transistor J182

Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

diode varactor B110

Abstract: CXD2818ER CXD28 CXA3775ER CXA3775 BIAS165 NX2520SA Denpa cxd2818 eastar
Contextual Info: Zero-IF Tuner IC for Digital Satellite Broadcast CXD2818ER Description The CXD2818ER is an IC developed for direct orthogonal detection of L band 1 to 2GHz IF signals in a digital satellite broadcast reception tuner. The CXD2818ER incorporates all the functions (RF gain control amplifier, oscillator circuit, wide-band phase

Contextual Info: OSCILLATOR P R O D U C T G U I D E THE CONNOR-WINFIELD CORPORATION VCXO OCXO TCXO XO Global Timing Solutions for 50 Years At Connor-Winfield we take a consultative approach in providing solutions to your frequency control design requirements. Our engineers excel at working with your

1030MHz-1090MHz

Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V
Contextual Info: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

CXD2818ER

Abstract: EA-PS 9000 diode varactor B110 eastar
Contextual Info: Zero-IF Tuner IC for Digital Satellite Broadcast CXD2818ER Description The CXD2818ER is an IC developed for direct orthogonal detection of L band 1 to 2GHz IF signals in a digital satellite broadcast reception tuner. The CXD2818ER incorporates all the functions (RF gain control amplifier, oscillator circuit, wide-band phase

CXA3775ER

Abstract: CXA3775
Contextual Info: Direct Conversion IC for Digital Satellite Broadcast Tuner CXA3775ER Description The CXA3775ER is an IC developed for direct orthogonal detection of L band 1 to 2GHz IF signals in a digital satellite broadcast reception tuner. The CXA3775ER incorporates all the functions (RF gain control amplifier, oscillator circuit, wide-band phase

mPD71055

Abstract: NEC V810 V30MX MPD7000 memory compiler OPENCAD CMOS Block library PD71059 MPD71051 NZ70008H 70008h
Contextual Info: DATA SHEET CB-C8VX/VM 0.5-Micron Cell Based CMOS ASIC Description NEC’s CB-C8VX/VM family facilitates the design of complete cell-based silicon systems composed of user-defined logic, complex macrofunctions such as microprocessors, intelligent peripherals, analog functions and

Contextual Info: 1011LD110B 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110B is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest

AIRBORNE DME

Abstract: transistor SMD 12W MOSFET transistor SMD 12W smd transistor code 12w RF Transistor S10-12
Contextual Info: FEATURES ! GE PACKAGE Silicon MOSFET Technology Operation from 24V to 50V High Power Gain Extreme Ruggedness Internal Input and Output Matching Excellent Thermal Stability All Gold Bonding Scheme Pb-free and RoHS Compliant TYPICAL PERFORMANCE Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with