256MBITS Search Results

Contextual Info: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-B75B/10B 64M words x 72 bits, 1 Rank Features The HB54A5129F1 is a 64M × 72 × 1 rank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM sealed in TSOP package, 1 piece of PLL clock driver, 2 pieces of register driver

Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2U-A75B/B75B/10B 128M words x 72 bits, 2 Banks Description Features The HB54R1G9F2U is a 128M × 72 × 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of 256Mbits DDR SDRAM (HM5425401BTB) sealed in

HM5425161BTT

Contextual Info: PRELIMINARY DATA SHEET 128MB DDR SDRAM S.O. DIMM HB54A1288KM 16M words x 64 bits, 1 Bank Features The HB54A1288KM is a 16M × 64 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 4 pieces of 256Mbits DDR SDRAM (HM5425161BTT) sealed in TSOP package and 1 piece of serial EEPROM (2k bits

cmos 4069

Abstract: DIMM Socket, 184-pin HB54A5129F1 HB54A5129F1-10B HB54A5129F1-B75B
Contextual Info: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-B75B/10B 64M words x 72 bits, 1 Rank Description Features The HB54A5129F1 is a 64M × 72 × 1 rank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM sealed in TSOP package, 1

TC59LM806CFT

Abstract: TC59LM814CFT
Contextual Info: TC59LM814/06CFT-50,-55,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network

TC59LM806CTG

Abstract: TC59LM814CTG
Contextual Info: TC59LM814/06CTG-50,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead-Free 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CTG are Network

Contextual Info: TC59LM814/06CFT-50,-55,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network

HB54A5129F1U

Abstract: HB54A5129F1U-10B HB54A5129F1U-A75B HB54A5129F1U-B75B HM5425401BTT
Contextual Info: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1U-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1U is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in

HB54R1G9F2U

Abstract: HB54R1G9F2U-10B HB54R1G9F2U-A75B HB54R1G9F2U-B75B
Contextual Info: DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2U-A75B/B75B/10B 128M words x 72 bits, 2 Banks Description Features The HB54R1G9F2U is a 128M × 72 × 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of 256Mbits DDR SDRAM (HM5425401BTB) sealed in

EBD51RC4AAFA-7B

Abstract: DDR266B EBD51RC4AAFA EBD51RC4AAFA-7A M2S56D20ATP-75A DDR266A
Contextual Info: PRELIMINARY DATA SHEET 512MB Registered DDR SDRAM DIMM EBD51RC4AAFA 64M words x 72 bits, 1 Bank Description Features The EBD51RC4AAFA is a 64M words × 72 bits × 1 bank Double Data Rate (DDR) SDRAM Module, mounting 18 pieces of 256Mbits DDR SDRAM sealed

Contextual Info: PRELIMINARY DATA SHEET 512MB Registered DDR SDRAM DIMM EBD51RC4AAFA 64M words x 72 bits, 1 Bank Description Features The EBD51RC4AAFA is a 64M words × 72 bits × 1 bank Double Data Rate (DDR) SDRAM Module, mounting 18 pieces of 256Mbits DDR SDRAM sealed

Contextual Info: DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2U-B75B/10B 128M words x 72 bits, 2 Ranks Description Features The HB54R1G9F2U is a 128M × 72 × 2 rank Double Data Rate (DDR) SDRAM Module, mounting 36 pieces of 256Mbits DDR SDRAM sealed in TCP package, 1

Contextual Info: TC59LM814/06CTG-50,-55,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead-Free 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CTG are Network

TC59LM806CFT

Abstract: TC59LM814CFT
Contextual Info: TC59LM814/06CFT-50,-55,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network

TC59LM806CFT

Abstract: TC59LM814CFT
Contextual Info: TC59LM814/06CFT-50,-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 256Mbits Network FCRAM1 − 4,194,304-WORDS x 4 BANKS × 16-BITS − 8,388,608-WORDS × 4 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFT are Network

Contextual Info: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-B75B/10B 64M words x 72 bits, 1 Rank Description Features The HB54A5129F1 is a 64M × 72 × 1 rank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM sealed in TSOP package, 1

HB54A5129F1

Abstract: HB54A5129F1-10B HB54A5129F1-A75B HB54A5129F1-B75B HM5425401BTT
Contextual Info: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1 is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in

Contextual Info: PRELIMINARY DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1U-A75B/B75B/10B 64M words x 72 bits, 1 Bank Description Features The HB54A5129F1U is a 64M × 72 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM (HM5425401BTT) sealed in

Contextual Info: PRELIMINARY DATA SHEET 128MB DDR SDRAM S.O. DIMM HB54A1288KM 16M words x 64 bits, 1 Bank Description Features The HB54A1288KM is a 16M × 64 × 1 bank Double Data Rate (DDR) SDRAM Module, mounted 4 pieces of 256Mbits DDR SDRAM (HM5425161BTT) sealed in TSOP package and 1 piece of serial EEPROM (2k bits

78 MOS

Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2U-A75B/B75B/10B 128M words x 72 bits, 2 Banks Description Features The HB54R1G9F2U is a 128M × 72 × 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of 256Mbits DDR SDRAM (HM5425401BTB) sealed in

Contextual Info: DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2-B75B/10B 128M words x 72 bits, 2 Ranks Description Features The HB54R1G9F2 is a 128M × 72 × 2 rank Double Data Rate (DDR) SDRAM Module, mounting 36 pieces of 256Mbits DDR SDRAM sealed in TCP package, 1

HB54A5129F1

Abstract: HB54A5129F1-10B HB54A5129F1-B75B
Contextual Info: DATA SHEET 512MB Registered DDR SDRAM DIMM HB54A5129F1-B75B/10B 64M words x 72 bits, 1 Rank Features The HB54A5129F1 is a 64M × 72 × 1 rank Double Data Rate (DDR) SDRAM Module, mounted 18 pieces of 256Mbits DDR SDRAM sealed in TSOP package, 1 piece of PLL clock driver, 2 pieces of register driver

BI 170-1-2

Abstract: lalb RDAB 31 UVW generator TC59LM806CFTI TC59LM814CFTI
Contextual Info: TC59LM814/06CFTI-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 256Mbits Network FCRAM1 I-version − 8,388,608-WORDS x 4 BANKS ×8-BITS − 4,194,304-WORDS × 4 BANKS ×16-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM814/06CFTI are Network

Contextual Info: PRELIMINARY DATA SHEET 1GB Registered DDR SDRAM DIMM HB54R1G9F2-A75B/B75B/10B 128M words x 72 bits, 2 Banks Description Features The HB54R1G9F2 is a 128M × 72 × 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of 256Mbits DDR SDRAM (HM5425401BTB) sealed in