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MCD220 Datasheets (5)

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IXYS

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MCD220-08IO1	IXYS	800V thyristor modules thyristor/diode module	Original	PDF	166.69KB	4
MCD220-12IO1	IXYS	1200V thyristor modules thyristor/diode module	Original	PDF	166.69KB	4
MCD220-14IO1	IXYS	1400V thyristor modules thyristor/diode module	Original	PDF	166.69KB	4
MCD220-16IO1	IXYS	1600V thyristor modules thyristor/diode module	Original	PDF	166.69KB	4
MCD220-18io1	IXYS	Thyristor HYBRID DOUBLER MODULE 1800V 9000A 7CASE STYLE	Original	PDF	142.99KB	4

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Omega Engineering


Omega Engineering FT-PMCD22-02-12 - Bulk (Alt: FT-PMCD22-02-12)
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Avnet Americas	FT-PMCD22-02-12	Bulk			25	1 $33.70 10 $33.70 100 $33.70 1000 $33.70 10000 $33.70	Get Quote
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Omega Engineering FT-MCD22-04 - Bulk (Alt: FT-MCD22-04)
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Avnet Americas	FT-MCD22-04	Bulk			10	1 $47.10 10 $47.10 100 $47.10 1000 $47.10 10000 $47.10	Get Quote
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Omega Engineering FT-MCD22-03 - Bulk (Alt: FT-MCD22-03)
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Avnet Americas	FT-MCD22-03	Bulk		12 Weeks	10	1 $47.10 10 $47.10 100 $47.10 1000 $47.10 10000 $47.10	Buy Now
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Omega Engineering FT-PMCD22-01-12 - Bulk (Alt: FT-PMCD22-01-12)
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Omega Engineering FT-MCD22-02 - Bulk (Alt: FT-MCD22-02)
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Avnet Americas	FT-MCD22-02	Bulk		7 Weeks	10	1 $47.10 10 $47.10 100 $47.10 1000 $47.10 10000 $47.10	Buy Now
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MCD220 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
j45ac Contextual Info: 4 b ô b 2 2 b GDGlbflS ITS « I X Y m xYS MCC220 iTAV= 2 X 250 A MCD220 v RRM= 600-1600 V Thyristor Modules Thyristor/Diode Modules Type V V Version 1 Version 1 \| 700 900 1300 1500 1700 600 800 1200 1400 1600 MCC220*06io1 MCC220-08io1 MCC220-12io1 MCC220-14ÍO1	OCR Scan	mcc220 mcd220 06io1 mcc220-08io1 +5mcc220-12io1 mcc220-14 mcc220-16 mcd220-08 j45ac	PDF
13006 TRANSISTOR Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken	Original	pmbfj620 ot363 msc895 13006 transistor +6transistor 13006 e 13006 13006 mcd217 fet marking 13006 d	PDF
PMBFJ620,115 Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken	Original	pmbfj620 ot363 pmbfj620,115	PDF
pmbfj310 Contextual Info: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION	Original	pmbfj308 pmbfj309 pmbfj310	PDF
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	5-10a 52-14n01 52-16n01 55-12n +1655-14n07 55-18n 60-08n 60-16n 62-08n 62-12n 40n80 13nb0 60n60 dsei 20-12 33n120 vuo 35-12 n 0 7 ds117-12a ds117-12 26n60 4410pi	PDF
06io1 Abstract: MCD132-16101 MCD72-12I08B MCD72-04IO8B MCD95-04IO8B MCD95-04 MCD95-12I08B 12io1 MCD95-16I08B MCD250-08IO1 Contextual Info: Thyristor / Diode Modules 'TAV = 27-320 A Type TFIMS 18« A 45°C 10 ms A E 72 873 M MCD26-16IOBB • MCD26-14io8B MC026-12loBB • MCD26-06io8B • MCD26-04io8B MCD44-18lo8B MCD44-16io8B • MCD44-14Ì08B MCD44-12Ì08B MCD44-08IO8B • MCD44-06ÌO8B • MCD44-04io8B	OCR Scan	o-240 mcd26-16iobb mcd26-14io8b mc026-12lobb +16mcd26-06io8b mcd26-04io8b mcd44-18lo8b mcd44-16io8b mcd44-14 mcd44-12 06io1 mcd132-16101 mcd72-12i08b mcd72-04io8b mcd95-04io8b mcd95-04 mcd95-12i08b 12io1 mcd95-16i08b mcd250-08io1	PDF
J310 Abstract: J309 application note J308 J310 applications J309 MCD212 MCD221 VHF Transistors Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors	Original	j310 j309 application note j308 j310 applications +4j309 mcd212 mcd221 vhf transistors	PDF
MCD40-12 Abstract: MCD40 MCD16208IO MCD95-14IO8 MCD56-16 MCD72-16 06io1 MCD224-22IO1 mcd401 M11-P Contextual Info: Thyristor / Diode Modules ¡ h t iif i lw = 27-250 A Type v RRM Tc V rms rT TSM □ p ^"vJM 45°C 10ms th,/C per Chip V A °C A A V m °C K/W MCD26-08io8B MCD26-12io8B MCD26-14io8B MCD26-16io8B 800 1200 1400 1600 27 85 50 520 0.85 11 125 0.88 MCD40-12ÌO6	OCR Scan	mcd26-08io8b mcd26-12io8b mcd26-14io8b mcd26-16io8b +15mcd40-12 mcd40-16io6 mcd44-08io8b mcd44-12io8b mcd44-14io8b mcd44-16io8b mcd40 mcd16208io mcd95-14io8 mcd56-16 mcd72-16 06io1 mcd224-22io1 mcd401 m11-p	PDF
LT 220 diode Contextual Info: nixYS ' !. :-u r’ Thyristor Modules Thyristor/Diode Modules MCC 220 MCD 220 ^TRMS ^TAVM = 2 x 400 A = 2 x 250 A V RRM = 800 -1600 V v RSM V RRM v DSM v DRM V V Version 1 Version 1 900 1300 1500 1700 800 1200 1400 1600 MCC 220-08ÌO1 MCC 220-12io1 MCC 220-14io1	OCR Scan	220-12io1 220-14io1 220-16io1 4bflb22b +1lt 220 diode	PDF
PMBFJ620 Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken	Original	pmbfj620 ot363 771-pmbfj620-t/r	PDF
c2785 Abstract: MCD95-16IO8B MCD162 10MSA Contextual Info: Thyristor / Diode Modules b t i i ì ib ü tf lTAV = 27-320 A Type VR TAV TSM 450C Tc V„ ► New MCD26-08ÌO8B MCD26-12io8B MCD26-14io8B MCD26-16Ì08B MCD44-08io8B MCD44-12io8B MCD44-14io8B MCD44-16Ì08B MCD44-18Ì08B MCD56-08ÌO8B MCD56-12Ì08B MCD56-14io8B	OCR Scan	mcd26-08 mcd26-12io8b mcd26-14io8b mcd26-16 +10mcd44-08io8b mcd44-12io8b mcd44-14io8b mcd44-16 mcd44-18 mcd56-08 c2785 mcd95-16io8b mcd162 10msa	PDF
J310 Abstract: J309 J310 Application Note Transistor J310 J308 j310 equivalent MCD217 MCD212 MCD221 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors	Original	j310 j309 j310 application note transistor j310 +5j308 j310 equivalent mcd217 mcd212 mcd221	PDF
MCD228 Abstract: PMBFJ310 MCD214 MCD221 PMBFJ309 marking BSs sot23 n-channel MCD217 PMBFJ308 MA1612 SOT-23 bdi Contextual Info: Philips Semiconductors Product specification N-channel silicon field-effect transistors FEATURES PMBFJ308, F^BW309, PMBFJ310 PINNING - SOT23 • Low noise PIN SYMBOL • Interchangeability of drain and source connections 1 s source • High gain. 2 d drain	OCR Scan	pmbfj308 pmbfj309 pmbfj310 mcd226 +7mcd228 mcd214 mcd221 marking bss sot23 n-channel mcd217 ma1612 sot-23 bdi	PDF
MCD162-08IO1 Abstract: A2785 MCD162-14IO1 10MSA Contextual Info: Thyristor / Diode Modules •tfcih ¡tr itìi lTAV = 27-320 A Type MCD.J08 RRM ^DRM V MCD26-08io8B MCD26-12io8B MCD26-14io8B MCD26-16Ì08B MCD44-08io8B MCD44-12io8B MCD44-14io8B MCD44-16io8B MCD44-18io8B p TSM thJC 45°C 10 ms A O m iì K/W 800 49 85 80 1150	OCR Scan	o-240 mcd26-08io8b mcd26-12io8b mcd26-14io8b +10mcd26-16 mcd44-08io8b mcd44-12io8b mcd44-14io8b mcd44-16io8b mcd44-18io8b mcd162-08io1 a2785 mcd162-14io1 10msa	PDF

mm036 Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100 Contextual Info: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA	OCR Scan	dsai35-12a 5-16a 5-18a 5-12a +142-06a 12-1oa 2-12a 2x30-q4c mm036 ml075-12 mm036-12 mm036-16 mm075-12io1 mm062 dsi 12-06a mdd95-16n1b me03 21n100	PDF
mcc44-16i01b Abstract: MCD40 MCC44-14I08B MCC44-18I08B MCD310-20io1 MCD312-16I01 mcd162-16io1 MCD250-08IO1 MCD255-16IO1 MCC44-16-I01B Contextual Info: Thyristor / Diode Modules Iw MCD.io8/.io6 = 2 7 -3 2 0 A Type *TSM New 45°C 10 ms A thJC MCD.io1 Package style thCK per Chip per Chip K/W Outlines pages 52,53,54 K/W MCD26-08ÌO8B M CD26-12io8B MCD26-14Ì08B M CD26-16io8B 800 1200 1400 1600 M CD40-12io6	OCR Scan	mcd26-08 cd26-12io8b mcd26-14 cd26-16io8b +16cd40-12io6 mcd40-16 mcd44-08 mcd44-12 cd44-14io8b cd44-16io8b mcc44-16i01b mcd40 mcc44-14i08b mcc44-18i08b mcd310-20io1 mcd312-16i01 mcd162-16io1 mcd250-08io1 mcd255-16io1 mcc44-16-i01b	PDF
marking code 10 sot23 Abstract: MCD217 PMBFJ310 MCD221 PMBFJ308 PMBFJ309 PMBFJ310,2 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Sep 11 Philips Semiconductors Product specification	Original	pmbfj308 pmbfj309 pmbfj310 marking code 10 sot23 +3mcd217 mcd221 pmbfj310,2	PDF
DSE 130 -06A Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01	OCR Scan	axc-051 axc-051-r axc-102 axv-002 +16015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 dse 130 -06a vub 70-12 ixgh 30n120 vub 70-16 30n60b 80n10 12n60cd dsei 30-16 as dsep 15-06a 13n50	PDF
pmbfj310 Abstract: PMBFJ308 PMBFJ309 13403 PMBFJ310,2 Contextual Info: PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 03 — 23 July 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected	Original	pmbfj308 pmbfj309 pmbfj310 msc895 +213403 pmbfj310,2	PDF

MCD220 Search Results

MCD220 Datasheets (5)

MCD220 Price and Stock

Omega Engineering FT-PMCD22-02-12

Omega Engineering FT-MCD22-04

Omega Engineering FT-MCD22-03

Omega Engineering FT-PMCD22-01-12

Omega Engineering FT-MCD22-02

MCD220 Datasheets Context Search

j45ac

13006 TRANSISTOR

PMBFJ620,115

pmbfj310

40n80

06io1

J310

MCD40-12

LT 220 diode

PMBFJ620

c2785

J310

MCD228

MCD162-08IO1

mm036

mcc44-16i01b

marking code 10 sot23

DSE 130 -06A

pmbfj310