MCD226 Search Results

MCD226 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
13006 TRANSISTOR Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken	Original	pmbfj620 ot363 msc895 13006 transistor +6transistor 13006 e 13006 13006 mcd217 fet marking 13006 d	PDF
PMBFJ620,115 Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken	Original	pmbfj620 ot363 pmbfj620,115	PDF
pmbfj310 Contextual Info: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION	Original	pmbfj308 pmbfj309 pmbfj310	PDF
J310 Abstract: J309 application note J308 J310 applications J309 MCD212 MCD221 VHF Transistors Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors	Original	j310 j309 application note j308 j310 applications +4j309 mcd212 mcd221 vhf transistors	PDF
PMBFJ620 Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken	Original	pmbfj620 ot363 771-pmbfj620-t/r	PDF
J310 Abstract: J309 J310 Application Note Transistor J310 J308 j310 equivalent MCD217 MCD212 MCD221 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors	Original	j310 j309 j310 application note transistor j310 +5j308 j310 equivalent mcd217 mcd212 mcd221	PDF
marking code 10 sot23 Abstract: MCD217 PMBFJ310 MCD221 PMBFJ308 PMBFJ309 PMBFJ310,2 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Sep 11 Philips Semiconductors Product specification	Original	pmbfj308 pmbfj309 pmbfj310 marking code 10 sot23 +3mcd217 mcd221 pmbfj310,2	PDF
pmbfj310 Abstract: PMBFJ308 PMBFJ309 13403 PMBFJ310,2 Contextual Info: PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 03 — 23 July 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected	Original	pmbfj308 pmbfj309 pmbfj310 msc895 +213403 pmbfj310,2	PDF