MBRB8H100T4G Search Results

Contextual Info: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

b8h100g

Contextual Info: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and

Contextual Info: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package http://onsemi.com This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

b8h100g

Abstract: MBRB8H100T4G
Contextual Info: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and

schottky

Abstract: MBR230LSFT1G MBR30100CT MBRF20H100CTG STPS30 MBR30H100CTG mbrs1645 MBRS2H100T3G T0-220 MBR20H100CTG
Contextual Info: ONSEMI Part # MBR230LSFT1G MBRS2H100T3G MBRB8H100T4G MBR10H100CTG MBRB1645T4G MBR20H100CTG MBRB20H100CTT4G MBRF20H100CTG MBRB30H30CT-1G MBR30H30CTG MBR30L45CTG MBRB3045CT-1G MBRF30H60CTG MBR30H60CTG MBRB30H60CT-1G MBR30H100CTG MBR40L45CTG MBR41H100CTG MBRB41H100CT-1G

B8H100G

Abstract: B8H100 MBRB8H100T4G B8H1 C146C marking 146C
Contextual Info: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and

b8h100g

Abstract: MBRB8H100T4G
Contextual Info: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

b8h100g

Abstract: B8H100
Contextual Info: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

NTP2955G

Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G
Contextual Info: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature