NTD5407NT4G Search Results

NTD5407NT4G Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NTD5407NT4G		On Semiconductor	Power MOSFET 40 V, 38 A, Single N-Channel, DPAK	Original	PDF	65.06KB	6

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onsemi NTD5407NT4G MOSFET N-CH 40V 7.6A/38A DPAK
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NTD5407NT4G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC−Q101 Qualified and PPAP Capable − STD5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com	Original	NTD5407N, STD5407N NTD5407N/D	PDF
NTD5407NG Abstract: TB-17 07NG NTD5407N NTD5407NT4G Contextual Info: NTD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Low Gate Charge These are Pb−Free Devices http://onsemi.com Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits	Original	NTD5407N NTD5407N/D NTD5407NG TB-17 07NG NTD5407N NTD5407NT4G	PDF
NTP2955G Abstract: m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G Contextual Info: 5V ±3% 80 mA 0.8 V — 6 mA 1 mA CS8101 5V ±2% 100 mA 0.6 V 50 mA 140 mA (100 mA) CS8151 5V ±2% 100 mA 0.6 V — 750 mA (200 mA) CS8221 5V ±2% 100 mA 0.6 V — NCV317L Adj ±4% 100 mA 1.9 V (Typ) — Overvoltage Current Limit Wakeup l Overtemperature	Original	CS8101 CS8151 CS8221 NCV317L NCV553 SC-82 SOIC-20 SGD516/D NTP2955G m74vhc1gt50 MBRA340T3G NTR4003NT1G NCV78L00A ncv7420 MBRB20100CTT4G BAT54CL MBRS2H100T3G MBRS340T3G	PDF
07NG Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STD5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications	Original	NTD5407N, STD5407N NTD5407N/D 07NG	PDF
Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STB5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications	Original	NTD5407N, STD5407N STB5407N NTD5407N/D	PDF
Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101	Original	NTD5407N, STD5407N NTD5407N/D	PDF
5407ng Abstract: NTD5407NT4G 5407N NTD5407N NTD5407NG 07NG Contextual Info: NTD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Low Gate Charge These are Pb−Free Devices http://onsemi.com Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits	Original	NTD5407N NTD5407N/D 5407ng NTD5407NT4G 5407N NTD5407N NTD5407NG 07NG	PDF
Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STD5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications	Original	NTD5407N, STD5407N NTD5407N/D	PDF