07NG Search Results

Contextual Info: NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com

369D

Contextual Info: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com • • • • RDS(on) MAX ID MAX 37 mW @ 4.5 V 16 A 31 mW @ 10 V

Contextual Info: NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com

Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC−Q101 Qualified and PPAP Capable − STD5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com

NTD5407NG

Abstract: TB-17 07NG NTD5407N NTD5407NT4G
Contextual Info: NTD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Low Gate Charge These are Pb−Free Devices http://onsemi.com Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits

07NG

Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STD5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications

Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STB5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications

NVD5807NT4G

Contextual Info: NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com

07NG

Abstract: 5807N 369D NTD5807N NTD5807NT4G qt912
Contextual Info: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com V(BR)DSS Applications • • • • 40 V CCFL Backlight DC Motor Control

Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101

5407ng

Abstract: NTD5407NT4G 5407N NTD5407N NTD5407NG 07NG
Contextual Info: NTD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Low Gate Charge These are Pb−Free Devices http://onsemi.com Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits

07NG

Abstract: 5807N 369D NTD5807N NTD5807NT4G C3129
Contextual Info: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com • • • • RDS(on) MAX ID MAX 37 mW @ 4.5 V 16 A 31 mW @ 10 V

Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STD5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications

Contextual Info: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com 40 V CCFL Backlight DC Motor Control Class D Amplifier Power Supply Secondary Side Synchronous Rectification