07NG Search Results
07NG Result Highlights (4)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| UC2707NG4 | Texas Instruments | Complementary High Speed Power Drivers 16-PDIP -40 to 85 |
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| UC2907NG4 | Texas Instruments | Load Share Controller 16-PDIP -40 to 85 |
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| UC3707NG4 | Texas Instruments | Complementary High Speed Power Drivers 16-PDIP 0 to 70 |
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| UC3907NG4 | Texas Instruments | Load Share Controller 16-PDIP 0 to 70 |
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07NG Price and Stock
Boyd Corporation 7717-107NGMounting Pad for Integrated Circuits 8 Lead 10.92mm OD Nylon - Bulk (Alt: 7717-107NG) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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7717-107NG | Bulk | 2,500 |
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Get Quote | ||||||
Kyocera AVX Components AL023307NGTSAIR CORE INDUCTORS - Tape and Reel (Alt: AL023307NGTS) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AL023307NGTS | Tape & Reel | 16 Weeks | 2,000 |
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AL023307NGTS |
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Boyd Corporation MAX07NGHeatsink Clip, 12 mm Width, For TO-220 Packages, Max Clip Series - Bulk (Alt: 414596) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MAX07NG | Bulk | 17 Weeks | 5,000 |
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MAX07NG | Bulk | 14,378 | 1 |
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MAX07NG | Bulk | 8 Weeks | 5,000 |
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Get Quote | |||||
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MAX07NG | 5,000 |
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Get Quote | |||||||
BOYD Laconia MAX07NGHeat Sinks Max Clip for TO-220, MAX-220, w/Screws, 12mm Width, 0.6mm Thickness, 50N Force |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MAX07NG | 65,709 |
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MAX07NG | 15 |
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MAX07NG | 37,375 | 1 |
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MAX07NG | 21,034 |
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Intel Corporation AX210.NGWGII.NV99ARN6Multiprotocol Modules Intel Wi-Fi 6E AX210 (Gig+), 2230, 2x2 AX R2 (6GHz)+BT, No vPro , Industrial |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AX210.NGWGII.NV99ARN6 | 1,840 |
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07NG Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com |
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ntd5807nnvd5807nntd5807n/d | |
369DContextual Info: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com • • • • RDS(on) MAX ID MAX 37 mW @ 4.5 V 16 A 31 mW @ 10 V |
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ntd5807nntd5807n/d369d | |
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Contextual Info: NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com |
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ntd5807nnvd5807nntd5807n/d | |
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Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC−Q101 Qualified and PPAP Capable − STD5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com |
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ntd5407nstd5407nntd5407n/d | |
NTD5407NG
Abstract: TB-17 07NG NTD5407N NTD5407NT4G
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ntd5407nntd5407n/dntd5407ngtb-17+2 | |
07NGContextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STD5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications |
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ntd5407nstd5407nntd5407n/d07ng | |
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Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STB5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications |
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ntd5407nstd5407nstb5407nntd5407n/d | |
NVD5807NT4GContextual Info: NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com |
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ntd5807nnvd5807naec-q101ntd5807n/d+1 | |
07NG
Abstract: 5807N 369D NTD5807N NTD5807NT4G qt912
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ntd5807nntd5807n/d07ng5807n+3 | |
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Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 |
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ntd5407nstd5407nntd5407n/d | |
5407ng
Abstract: NTD5407NT4G 5407N NTD5407N NTD5407NG 07NG
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ntd5407nntd5407n/d5407ngntd5407nt4g+3 | |
07NG
Abstract: 5807N 369D NTD5807N NTD5807NT4G C3129
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ntd5807nntd5807n/d07ng5807n+3 | |
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Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STD5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications |
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ntd5407nstd5407nntd5407n/d | |
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Contextual Info: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com 40 V CCFL Backlight DC Motor Control Class D Amplifier Power Supply Secondary Side Synchronous Rectification |
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ntd5807nntd5807n/d |