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    07NG Search Results

    07NG Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    UC2707NG4
    Texas Instruments Complementary High Speed Power Drivers 16-PDIP -40 to 85 Visit Texas Instruments Buy
    UC2907NG4
    Texas Instruments Load Share Controller 16-PDIP -40 to 85 Visit Texas Instruments Buy
    UC3707NG4
    Texas Instruments Complementary High Speed Power Drivers 16-PDIP 0 to 70 Visit Texas Instruments Buy
    UC3907NG4
    Texas Instruments Load Share Controller 16-PDIP 0 to 70 Visit Texas Instruments Buy
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    07NG Price and Stock

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    Boyd Corporation 7717-107NG

    Mounting Pad for Integrated Circuits 8 Lead 10.92mm OD Nylon - Bulk (Alt: 7717-107NG)
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    Avnet Americas 7717-107NG Bulk 2,500
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    Kyocera AVX Components AL023307NGTS

    AIR CORE INDUCTORS - Tape and Reel (Alt: AL023307NGTS)
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    Avnet Americas AL023307NGTS Tape & Reel 16 Weeks 2,000
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    Mouser Electronics AL023307NGTS
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    Boyd Corporation MAX07NG

    Heatsink Clip, 12 mm Width, For TO-220 Packages, Max Clip Series - Bulk (Alt: 414596)
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    Avnet Americas MAX07NG Bulk 17 Weeks 5,000
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    Newark MAX07NG Bulk 14,378 1
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    RS MAX07NG Bulk 8 Weeks 5,000
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    TME MAX07NG 5,000
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    BOYD Laconia MAX07NG

    Heat Sinks Max Clip for TO-220, MAX-220, w/Screws, 12mm Width, 0.6mm Thickness, 50N Force
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    Mouser Electronics MAX07NG 65,709
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    Bristol Electronics MAX07NG 15
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    Sager MAX07NG 37,375 1
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    Interstate Connecting Components MAX07NG 10,124
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    Master Electronics MAX07NG 21,034
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    Intel Corporation AX210.NGWGII.NV99ARN6

    Multiprotocol Modules Intel Wi-Fi 6E AX210 (Gig+), 2230, 2x2 AX R2 (6GHz)+BT, No vPro , Industrial
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    Mouser Electronics AX210.NGWGII.NV99ARN6 1,840
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    07NG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original
    ntd5807nnvd5807nntd5807n/d PDF

    369D

    Contextual Info: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com • • • • RDS(on) MAX ID MAX 37 mW @ 4.5 V 16 A 31 mW @ 10 V


    Original
    ntd5807nntd5807n/d369d PDF

    Contextual Info: NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original
    ntd5807nnvd5807nntd5807n/d PDF

    Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC−Q101 Qualified and PPAP Capable − STD5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original
    ntd5407nstd5407nntd5407n/d PDF

    NTD5407NG

    Abstract: TB-17 07NG NTD5407N NTD5407NT4G
    Contextual Info: NTD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Low Gate Charge These are Pb−Free Devices http://onsemi.com Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits


    Original
    ntd5407nntd5407n/dntd5407ngtb-17+207ngntd5407nt4g PDF

    07NG

    Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STD5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications


    Original
    ntd5407nstd5407nntd5407n/d07ng PDF

    Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STB5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications


    Original
    ntd5407nstd5407nstb5407nntd5407n/d PDF

    NVD5807NT4G

    Contextual Info: NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original
    ntd5807nnvd5807naec-q101ntd5807n/d+1nvd5807nt4g PDF

    07NG

    Abstract: 5807N 369D NTD5807N NTD5807NT4G qt912
    Contextual Info: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com V(BR)DSS Applications • • • • 40 V CCFL Backlight DC Motor Control


    Original
    ntd5807nntd5807n/d07ng5807n+3369dntd5807nt4gqt912 PDF

    Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101


    Original
    ntd5407nstd5407nntd5407n/d PDF

    5407ng

    Abstract: NTD5407NT4G 5407N NTD5407N NTD5407NG 07NG
    Contextual Info: NTD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • Low RDS on High Current Capability Low Gate Charge These are Pb−Free Devices http://onsemi.com Applications • Electronic Brake Systems • Electronic Power Steering • Bridge Circuits


    Original
    ntd5407nntd5407n/d5407ngntd5407nt4g+35407nntd5407ng07ng PDF

    07NG

    Abstract: 5807N 369D NTD5807N NTD5807NT4G C3129
    Contextual Info: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com • • • • RDS(on) MAX ID MAX 37 mW @ 4.5 V 16 A 31 mW @ 10 V


    Original
    ntd5807nntd5807n/d07ng5807n+3369dntd5807nt4gc3129 PDF

    Contextual Info: NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N−Channel, DPAK Features • • • • • Low RDS on High Current Capability Low Gate Charge AEC Q101 Qualified − STD5407N These Devices are Pb−Free and are RoHS Compliant http://onsemi.com Applications


    Original
    ntd5407nstd5407nntd5407n/d PDF

    Contextual Info: NTD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS on High Current Capability Avalanche Energy Specified These are Pb−Free Devices http://onsemi.com 40 V CCFL Backlight DC Motor Control Class D Amplifier Power Supply Secondary Side Synchronous Rectification


    Original
    ntd5807nntd5807n/d PDF