B8H100G Search Results
B8H100G Datasheets Context Search
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Contextual Info: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and |
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mbrb8h100t4gnbrb8h100t4gaec-q101mbrb8h100/d | |
b8h100gContextual Info: MBRB8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and |
Original |
mbrb8h100t4gmbrb8h100/db8h100g | |
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Contextual Info: MBRB8H100T4G, NBRB8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package http://onsemi.com This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and |
Original |
mbrb8h100t4gnbrb8h100t4gmbrb8h100/d | |
b8h100g
Abstract: MBRB8H100T4G
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Original |
mbrb8h100t4gmbrb8h100/db8h100g | |
B8H100G
Abstract: B8H100 MBRB8H100T4G B8H1 C146C marking 146C
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Original |
mbrb8h100t4gmbrb8h100/db8h100gb8h100+3 | |
b8h100g
Abstract: MBRB8H100T4G
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Original |
mbrb8h100t4gmbrb8h100/db8h100g | |
b8h100g
Abstract: B8H100
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Original |
mbrb8h100t4gnbrb8h100t4gaec-q101mbrb8h100/d+2 |