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    B8H100 Search Results

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    B8H100 Price and Stock

    onsemi

    onsemi MBRB8H100T4G

    Schottky Rectifier, 100 V, 8 A, Single, TO-263 (D2PAK), 3 Pins, 710 mV - Tape and Reel (Alt: MBRB8H100T4G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MBRB8H100T4G Tape & Reel 6,400 31 Weeks 800
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    • 1000 $0.77
    • 10000 $0.73
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    Mouser Electronics MBRB8H100T4G 1,287
    • 1 $2.66
    • 10 $1.31
    • 100 $1.17
    • 1000 $0.82
    • 10000 $0.82
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    Newark () MBRB8H100T4G Cut Tape 800
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    • 1000 $1.50
    • 10000 $1.38
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    MBRB8H100T4G Tape & Reel 800
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    • 1000 $1.15
    • 10000 $1.02
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    MBRB8H100T4G Tape & Reel 800
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    • 1000 $1.25
    • 10000 $1.04
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    RS MBRB8H100T4G Bulk 5
    • 1 -
    • 10 $2.66
    • 100 $2.34
    • 1000 $2.34
    • 10000 $2.34
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    Bristol Electronics MBRB8H100T4G 212 1
    • 1 $1.84
    • 10 $1.84
    • 100 $0.68
    • 1000 $0.68
    • 10000 $0.68
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    Rochester Electronics MBRB8H100T4G 38,880 1
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    TME MBRB8H100T4G 480 1
    • 1 $2.29
    • 10 $1.67
    • 100 $1.07
    • 1000 $0.82
    • 10000 $0.76
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    Avnet Asia MBRB8H100T4G 31 Weeks 1,600
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    Avnet Silica MBRB8H100T4G 2,400 29 Weeks 800
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    EBV Elektronik MBRB8H100T4G 30 Weeks 800
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    onsemi NRVB8H100MFSWFT1G

    8 A, 100 V Schottky Diode in SO-8FL - Tape and Reel (Alt: NRVB8H100MFSWFT1G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NRVB8H100MFSWFT1G Tape & Reel 21 Weeks 3,000
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    • 10 -
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    • 10000 $0.32
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    Mouser Electronics NRVB8H100MFSWFT1G 1,247
    • 1 $1.41
    • 10 $0.66
    • 100 $0.59
    • 1000 $0.40
    • 10000 $0.34
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    Newark NRVB8H100MFSWFT1G Tape & Reel 1,500
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    • 1000 -
    • 10000 $0.32
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    TME NRVB8H100MFSWFT1G 1
    • 1 $1.08
    • 10 $0.70
    • 100 $0.50
    • 1000 $0.45
    • 10000 $0.45
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    Avnet Silica NRVB8H100MFSWFT1G 31 Weeks 1,500
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    EBV Elektronik NRVB8H100MFSWFT1G 32 Weeks 1,500
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    onsemi NRVB8H100MFSWFT3G

    8 A, 100 V Schottky Diode in SO-8FL - Tape and Reel (Alt: NRVB8H100MFSWFT3G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NRVB8H100MFSWFT3G Tape & Reel 53 Weeks 5,000
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    • 10 -
    • 100 -
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    • 10000 $0.28
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    Mouser Electronics NRVB8H100MFSWFT3G 3,908
    • 1 $1.28
    • 10 $0.60
    • 100 $0.53
    • 1000 $0.40
    • 10000 $0.30
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    Newark NRVB8H100MFSWFT3G Tape & Reel 5,000
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    • 100 -
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    • 10000 $0.29
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    TME NRVB8H100MFSWFT3G 1
    • 1 $0.87
    • 10 $0.63
    • 100 $0.44
    • 1000 $0.31
    • 10000 $0.30
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    Avnet Asia NRVB8H100MFSWFT3G 53 Weeks 5,000
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    • 10000 $0.27
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    Avnet Silica NRVB8H100MFSWFT3G 31 Weeks 5,000
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    EBV Elektronik NRVB8H100MFSWFT3G 32 Weeks 5,000
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    Win Source Electronics NRVB8H100MFSWFT3G 10,000
    • 1 -
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    • 100 $1.20
    • 1000 $0.98
    • 10000 $0.98
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    onsemi MBRB8H100T4G.

    Rect Schottky, 100V, 8A, Single; |Onsemi MBRB8H100T4G.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MBRB8H100T4G. Tape & Reel 800
    • 1 -
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    • 1000 $0.80
    • 10000 $0.80
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    onsemi NBRB8H100T4G

    Diode Schottky 100V 8A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics NBRB8H100T4G 795
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    Vyrian NBRB8H100T4G 5,650
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    Win Source Electronics NBRB8H100T4G 10,000
    • 1 -
    • 10 $18.93
    • 100 $15.88
    • 1000 $15.88
    • 10000 $15.88
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    B8H100 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: B8H100T4G, B8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original
    mbrb8h100t4gnbrb8h100t4gaec-q101mbrb8h100/d PDF

    b8h100g

    Contextual Info: B8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original
    mbrb8h100t4gmbrb8h100/db8h100g PDF

    B8H100

    Contextual Info: MBR8H100MFS, B8H100MFS SWITCHMODE Power Rectifiers Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After • • • • • • Board Mounting Guardring for Stress Protection Low Forward Voltage Drop


    Original
    mbr8h100mfsnrvb8h100mfsmbr8h100mfs/db8h100 PDF

    Contextual Info: B8H100T4G, B8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package http://onsemi.com This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original
    mbrb8h100t4gnbrb8h100t4gmbrb8h100/d PDF

    b8h100g

    Abstract: MBRB8H100T4G
    Contextual Info: B8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original
    mbrb8h100t4gmbrb8h100/db8h100g PDF

    B8H100G

    Abstract: B8H100 MBRB8H100T4G B8H1 C146C marking 146C
    Contextual Info: B8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original
    mbrb8h100t4gmbrb8h100/db8h100gb8h100+3b8h1c146cmarking 146c PDF

    b8h100g

    Abstract: MBRB8H100T4G
    Contextual Info: B8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original
    mbrb8h100t4gmbrb8h100/db8h100g PDF

    b8h100g

    Abstract: B8H100
    Contextual Info: B8H100T4G, B8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and


    Original
    mbrb8h100t4gnbrb8h100t4gaec-q101mbrb8h100/d+2b8h100gb8h100 PDF