B8H100 Search Results

Contextual Info: B8H100T4G, B8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

b8h100g

Contextual Info: B8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and

B8H100

Contextual Info: MBR8H100MFS, B8H100MFS SWITCHMODE Power Rectifiers Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After • • • • • • Board Mounting Guardring for Stress Protection Low Forward Voltage Drop

Contextual Info: B8H100T4G, B8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package http://onsemi.com This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

b8h100g

Abstract: MBRB8H100T4G
Contextual Info: B8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and

B8H100G

Abstract: B8H100 MBRB8H100T4G B8H1 C146C marking 146C
Contextual Info: B8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and

b8h100g

Abstract: MBRB8H100T4G
Contextual Info: B8H100T4G SWITCHMODEt Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and

b8h100g

Abstract: B8H100
Contextual Info: B8H100T4G, B8H100T4G SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and