MBR10H100 Search Results

MBR10H100

Contextual Info: MBR1035 THRU MBR10H100 10.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 100 Volts Current 10.0 Amperes TO-220A Features .185 4.70 .175(4.44) Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction

MBRB10H90

Abstract: MBR10H100 MBRF10H90
Contextual Info: MBR10H100, MBRF10H100 & MBRB10H100 Series High Voltage Schottky Rectifiers TO-220AC MBR10H90, MBR10H100 Reverse Voltage 90 to 100V t c u Forward Current 10A d o r P Maximum Junction Temperature 175°C w Ne ITO-220AC (MBRF10H90, MBRF10H100) 0.185 (4.70) 0.415 (10.54) MAX.

MBR10H100

Abstract: MBRB10H90 MBRF10H90 MBR10H90 MBRB10H100 MBRF10H100
Contextual Info: MBR10H100, MBRF10H100 & MBRB10H100 Series High Voltage Schottky Rectifiers TO-220AC MBR10H90, MBR10H100 Reverse Voltage 90 to 100V t c u Forward Current 10A d o r P Maximum Junction Temperature 175°C w Ne ITO-220AC (MBRF10H90, MBRF10H100) 0.185 (4.70) 0.415 (10.54) MAX.

MBR10H100CT

Abstract: MBRB10H90CT MBR10H90CT MBRB10H100CT MBRF10H100CT MBRF10H90CT
Contextual Info: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Dual High-Voltage Schottky Rectifiers t Reverse Voltage 90 to 100V c u Forward Current 10A rod P ITO-220AB New MBRF10H90CT, MBRF10H100CT TO-220AB (MBR10H90CT, MBR10H100CT) 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)

10H150CT

Abstract: 10H150 MBR10H100CT MBR10H200CT CAAF 10H200CT MBR10H200
Contextual Info: E TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS COMPLIANCE 10.0 AMPS. Schottky Barrier Rectifiers TO-220AB 1 vWvti/t T!T7T7- Features <• <■ <■ <■ «■ <■ Plssiic material used carries Underwriters Laboratory Classifications S4V-0 Metal silicon Junction, ma|orlty carrier conduction

MBR10H100

Abstract: MBRB10H90 MBRF10H90 MBR10H90 MBRB10H100 MBRF10H100
Contextual Info: MBR10H100, MBRF10H100 & MBRB10H100 Vishay Semiconductors New Product formerly General Semiconductor High Voltage Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 10A Maximum Junction Temperature 175°C ITO-220AC MBRF10H90, MBRF10H100 0.188 (4.77)

MBR10H100

Abstract: 125OC MBR1035
Contextual Info: MBR1035 THRU MBR10H100 10.0 AMPS. Schottky Barrier Rectifiers Voltage Range 35 to 100 Volts Current 10.0 Amperes TO-220A Features a a a a a a a a .185 4.70 .175(4.44) Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction

MBR10H200CT

Abstract: MBR10H100CT
Contextual Info: RATINGS AND CHARACTERISTIC CURVES MBR10H100CT THRU MBR10H200CT Version: E10

Schottky

Abstract: MBR10H200CT C0
Contextual Info: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

MBRB10H90CT

Abstract: MBRF10H90CT MBR10H90CT MBRB10H100CT MBR10H100CT MBRF10100CT MBRF10H100CT mbr 22 14FEB02
Contextual Info: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Vishay Semiconductor New Product Dual High-Voltage Schottky Rectifiers Rev. Voltage 90 to 100V Forward Current 10A ITO-220AB MBRF10H90CT, MBRF10H100CT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80)

MBR10H100CT

Abstract: MBRB10H90CT mbrf 100 ct MBR10H90CT MBRB10H100CT MBRF10H100CT MBRF10H90CT
Contextual Info: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Dual High-Voltage Schottky Rectifiers t c u rod ITO-220AB P New Reverse Voltage 90 to 100V Forward Current 10A MBRF10H90CT, MBRF10H100CT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80) 0.100 (2.54)

Contextual Info: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

B10H100G

Abstract: B10H100
Contextual Info: MBR10H100CT SWITCHMODE] Power Rectifier 100 V, 10 A Features and Benefits • • • • • • • http://onsemi.com Low Forward Voltage: 0.61 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 10 A Total 5.0 A Per Diode Leg

MBR10H90CT

Contextual Info: MBR F,B 10H90CT & MBR(F,B)10H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB MBR10H90CT MBR10H100CT PIN 1 PIN 2 PIN 3 CASE 2 3 1 1 MBRF10H90CT

B10H100

Abstract: MBR10H100CT MBR10H100CTG
Contextual Info: MBR10H100CT SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • • • • • • • http://onsemi.com Low Forward Voltage: 0.61 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 10 A Total 5.0 A Per Diode Leg

MBR10H200CT

Abstract: 10H150CT MBR10H100CT
Contextual Info: MBR10H100CT - MBR10H200CT Pb RoHS 10.0 AMPS. Schottky Barrier Rectifiers COMPLIANCE TO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency

MBRB10H90CT

Abstract: MBR10H90CT
Contextual Info: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Vishay Semiconductor New Product Dual High-Voltage Schottky Rectifiers Rev. Voltage 90 to 100V Forward Current 10A ITO-220AB MBRF10H90CT, MBRF10H100CT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80)

MBRB10H90

Abstract: MBRF10H90
Contextual Info: MBR F,B 10H90 & MBR(F,B)10H100 New Product Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for improved high temperature performance FEATURES TO-220AC ITO-220AC 2 2 1 MBR10H90 MBR10H100 MBRF10H90 MBRF10H100 PIN 1 1 PIN 1

MBRB10H90

Abstract: MBR10H100 MBRF10H90
Contextual Info: MBR10H100, MBRF10H100 & MBRB10H100 Vishay Semiconductors New Product formerly General Semiconductor High Voltage Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 10A Maximum Junction Temperature 175°C ITO-220AC MBRF10H90, MBRF10H100 0.188 (4.77)

1da marking

Abstract: MBR10H100CT MBR10H200CT TV125 MARKING CODE 1DA
Contextual Info: TAIWAN SEMICONDUCTOR 5 MBR10H100CT - MBR10H200CT 10.0 AMPS. Schottky Barrier Rectifiers RoHS TO-220AB CO M PLIANCE -nr Features <• <■ <■ Plssiic material used carries Under*ri<era Laboratory Classifications &4V-0 Metal silicon Junction, ma|orlty carrier condutfion

Contextual Info: MBR10H100CT - MBR10H200CT 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features ­ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ­ Metal silicon junction, majority carrier conduction ­ Low power loss, high efficiency ­ High current capability, low forward voltage drop

MBRF10H90CT

Abstract: MBR10H100CT MBR10H90CT MBRB10H90CT MBRB10H100CT MBRF10H100CT
Contextual Info: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Vishay Semiconductor New Product Dual High-Voltage Schottky Rectifiers Rev. Voltage 90 to 100V Forward Current 10A ITO-220AB MBRF10H90CT, MBRF10H100CT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80)

MBR10H100

Abstract: MBRB10H90 MBRF10H90 MBR10H90 MBRB10H100 MBRF10H100
Contextual Info: MBR10H100, MBRF10H100 & MBRB10H100 Vishay Semiconductors New Product formerly General Semiconductor High Voltage Schottky Rectifiers Reverse Voltage 90 to 100V Forward Current 10A Maximum Junction Temperature 175°C ITO-220AC MBRF10H90, MBRF10H100 0.188 (4.77)

MBR10H100CT

Abstract: MBR10H90CT MBRB10H90CT MBRB10H100CT MBRF10H100CT MBRF10H90CT
Contextual Info: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Vishay Semiconductor New Product Dual High-Voltage Schottky Rectifiers Rev. Voltage 90 to 100V Forward Current 10A ITO-220AB MBRF10H90CT, MBRF10H100CT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80)