10H150 Search Results

10H150CT

Abstract: 10H150 MBR10H100CT MBR10H200CT CAAF 10H200CT MBR10H200
Contextual Info: E TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS COMPLIANCE 10.0 AMPS. Schottky Barrier Rectifiers TO-220AB 1 vWvti/t T!T7T7- Features <• <■ <■ <■ «■ <■ Plssiic material used carries Underwriters Laboratory Classifications S4V-0 Metal silicon Junction, ma|orlty carrier conduction

Contextual Info: MBRS10H45CTC . MBRS10H200CTC 10.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Current 10.0 A Voltage 45 to 200 V FEATURES • Low leakage current • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

Contextual Info: MBRS10H100CT thru MBRS10H200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020

Schottky

Contextual Info: MBRF10H100CT thru MBRF10H200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

Schottky

Abstract: MBR10H200CT C0
Contextual Info: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

GMR10H150C

Abstract: GMR10H150CTA3R GMR10H150CTA3T GMR10H150CTB3T TO-263-2
Contextual Info: 10H150C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Power Discrete Description Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. Major Ratings and Characteristics HIGH JUNCTION TEMPERATURE CAPABILITY Values Units 2X5

10h100ct

Abstract: 10h100c MBRF10H100CT MBRF10H200CT
Contextual Info: [E TAIWAN SEMICONDUC MBRF10H100CT - MBRF10H200CT Isolated 10.0 AMPS. Schottky Barrier Rectifiers RoHS ITO 220AB COMPLIANCE Features -Y- ❖ <> <§• -v- Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction

10A schottky

Abstract: GMR10H150C GMR10H150CTA3R GMR10H150CTA3T GMR10H150CTB3T 10h150c TO-3P Jedec package outline
Contextual Info: 10H150C 10A SCHOTTKY RECTIFIER Description Features Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. „ High junction temperature capability „ Good trade off between leakage current and forward voltage drop „

10h100c

Contextual Info: s TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS 10.0 AMPS. Schottky Barrier Rectifiers T O -2 2 0 A B CO M PLIANCE •V.L7YI TESr&t 1 v*Vn/ì T !T O Features ❖ <■ <■ <■ <■ <■ <■ <■ ❖ <• <f <■ ¿“ iV ¿tu; iîtnj ? HI P ls tiic m a te ria l used c a rrie s Under<7ritars

MBR10H200CT

Abstract: 10H150CT MBR10H100CT
Contextual Info: MBR10H100CT - MBR10H200CT Pb RoHS 10.0 AMPS. Schottky Barrier Rectifiers COMPLIANCE TO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency

10h100c

Abstract: MBRS10H100CT MBRS10H200CT 10H150CT
Contextual Info: MBRS10H100CT - MBRS10H200CT Pb RoHS 10.0 AMPS. Surface Mount Schottky Barrier Rectifiers Switchmode Power Rectifiers COMPLIANCE D2PAK Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction

Contextual Info: MBRF10H100CT thru MBRF10H200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - UL Recognized File # E-326243 - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

10H150CT

Contextual Info: MBRS10H100CT - MBRS10H200CT Pb RoHS 10.0 AMPS. Surface Mount Schottky Barrier Rectifiers Switchmode Power Rectifiers COMPLIANCE D2PAK Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction

Contextual Info: MBRF10H100CT - MBRF10H200CT 10.0AMPS Isolated Schottky Barrier Rectifiers ITO-220AB Features ­ UL Recognized File # E-326243 ­ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ­ Metal silicon junction, majority carrier conduction

Contextual Info: MBRS10H45CTC . MBRS10H200CTC 10.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Current 10.0 A Voltage 45 to 200 V FEATURES • Low leakage current • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

Contextual Info: MBRF10H100CT thru MBRF10H200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

D2PAK marking code 300

Abstract: mbrs 10h100ct
Contextual Info: MBRS10H100CT - MBRS10H200CT CREAT BY ART 10.0AMPS Surface Mount Schottky Barrier Rectifiers D2PAK Features — UL Recognized File # E-326854 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

1da marking

Abstract: MBR10H100CT MBR10H200CT TV125 MARKING CODE 1DA
Contextual Info: TAIWAN SEMICONDUCTOR 5 MBR10H100CT - MBR10H200CT 10.0 AMPS. Schottky Barrier Rectifiers RoHS TO-220AB CO M PLIANCE -nr Features <• <■ <■ Plssiic material used carries Under*ri<era Laboratory Classifications &4V-0 Metal silicon Junction, ma|orlty carrier condutfion

GMR10H150CTB3T

Abstract: 10H150C GMR10H125C GMR10H150C GMR10H150CTA3R GMR10H150CTA3T
Contextual Info: A Power Discrete 10H150C A MICROELECTRONICS HIGH VOLTAGE POWER SCHOTTKY RECTIFIER DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. Major Ratings and Characteristics High junction temperature capability

MBRS100

Abstract: MBRS100H100CTC
Contextual Info: MBRS10H45CTC . MBRS10H200CTC 10.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Current 10.0 A Voltage 45 to 200 V FEATURES • Low leakage current • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

Contextual Info: MBRF10H100CT - MBRF10H200CT CREAT BY ART 10.0AMPS Isolated Schottky Barrier Rectifiers ITO-220AB Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

MBRF10H100CT

Abstract: MBRF10H200CT 10H150
Contextual Info: MBRF10H100CT - MBRF10H200CT CREAT BY ART Pb 10.0AMPS Isolated Schottky Barrier Rectifiers ITO-220AB RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

MBRS10H100CT

Abstract: MBRS10H200CT E-326854
Contextual Info: MBRS10H100CT - MBRS10H200CT CREAT BY ART Pb 10.0AMPS Surface Mount Schottky Barrier Rectifiers D2PAK RoHS COMPLIANCE Features — UL Recognized File # E-326854 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction