MBR10H100CT Search Results

MBR10H100CT

Abstract: MBRB10H90CT MBR10H90CT MBRB10H100CT MBRF10H100CT MBRF10H90CT
Contextual Info: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Dual High-Voltage Schottky Rectifiers t Reverse Voltage 90 to 100V c u Forward Current 10A rod P ITO-220AB New MBRF10H90CT, MBRF10H100CT TO-220AB (MBR10H90CT, MBR10H100CT) 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)

10H150CT

Abstract: 10H150 MBR10H100CT MBR10H200CT CAAF 10H200CT MBR10H200
Contextual Info: E TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS COMPLIANCE 10.0 AMPS. Schottky Barrier Rectifiers TO-220AB 1 vWvti/t T!T7T7- Features <• <■ <■ <■ «■ <■ Plssiic material used carries Underwriters Laboratory Classifications S4V-0 Metal silicon Junction, ma|orlty carrier conduction

MBR10H200CT

Abstract: MBR10H100CT
Contextual Info: RATINGS AND CHARACTERISTIC CURVES MBR10H100CT THRU MBR10H200CT Version: E10

Schottky

Abstract: MBR10H200CT C0
Contextual Info: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

MBRB10H90CT

Abstract: MBRF10H90CT MBR10H90CT MBRB10H100CT MBR10H100CT MBRF10100CT MBRF10H100CT mbr 22 14FEB02
Contextual Info: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Vishay Semiconductor New Product Dual High-Voltage Schottky Rectifiers Rev. Voltage 90 to 100V Forward Current 10A ITO-220AB MBRF10H90CT, MBRF10H100CT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80)

MBR10H100CT

Abstract: MBRB10H90CT mbrf 100 ct MBR10H90CT MBRB10H100CT MBRF10H100CT MBRF10H90CT
Contextual Info: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Dual High-Voltage Schottky Rectifiers t c u rod ITO-220AB P New Reverse Voltage 90 to 100V Forward Current 10A MBRF10H90CT, MBRF10H100CT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80) 0.100 (2.54)

Contextual Info: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

B10H100G

Abstract: B10H100
Contextual Info: MBR10H100CT SWITCHMODE] Power Rectifier 100 V, 10 A Features and Benefits • • • • • • • http://onsemi.com Low Forward Voltage: 0.61 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 10 A Total 5.0 A Per Diode Leg

MBR10H90CT

Contextual Info: MBR F,B 10H90CT & MBR(F,B)10H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB MBR10H90CT MBR10H100CT PIN 1 PIN 2 PIN 3 CASE 2 3 1 1 MBRF10H90CT

10h100c

Contextual Info: s TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS 10.0 AMPS. Schottky Barrier Rectifiers T O -2 2 0 A B CO M PLIANCE •V.L7YI TESr&t 1 v*Vn/ì T !T O Features ❖ <■ <■ <■ <■ <■ <■ <■ ❖ <• <f <■ ¿“ iV ¿tu; iîtnj ? HI P ls tiic m a te ria l used c a rrie s Under<7ritars

B10H100

Abstract: MBR10H100CT MBR10H100CTG
Contextual Info: MBR10H100CT SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • • • • • • • http://onsemi.com Low Forward Voltage: 0.61 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 10 A Total 5.0 A Per Diode Leg

MBR10H200CT

Abstract: 10H150CT MBR10H100CT
Contextual Info: MBR10H100CT - MBR10H200CT Pb RoHS 10.0 AMPS. Schottky Barrier Rectifiers COMPLIANCE TO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency

MBRB10H90CT

Abstract: MBR10H90CT
Contextual Info: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Vishay Semiconductor New Product Dual High-Voltage Schottky Rectifiers Rev. Voltage 90 to 100V Forward Current 10A ITO-220AB MBRF10H90CT, MBRF10H100CT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80)

1da marking

Abstract: MBR10H100CT MBR10H200CT TV125 MARKING CODE 1DA
Contextual Info: TAIWAN SEMICONDUCTOR 5 MBR10H100CT - MBR10H200CT 10.0 AMPS. Schottky Barrier Rectifiers RoHS TO-220AB CO M PLIANCE -nr Features <• <■ <■ Plssiic material used carries Under*ri<era Laboratory Classifications &4V-0 Metal silicon Junction, ma|orlty carrier condutfion

MBRF10H90CT

Abstract: MBR10H100CT MBR10H90CT MBRB10H90CT MBRB10H100CT MBRF10H100CT
Contextual Info: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Vishay Semiconductor New Product Dual High-Voltage Schottky Rectifiers Rev. Voltage 90 to 100V Forward Current 10A ITO-220AB MBRF10H90CT, MBRF10H100CT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80)

MBR10H100CT

Abstract: MBR10H90CT MBRB10H90CT MBRB10H100CT MBRF10H100CT MBRF10H90CT
Contextual Info: MBR10H100CT, MBRF10H100CT & MBRB10H100CT Series Vishay Semiconductor New Product Dual High-Voltage Schottky Rectifiers Rev. Voltage 90 to 100V Forward Current 10A ITO-220AB MBRF10H90CT, MBRF10H100CT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72) 0.110 (2.80)

schottky

Abstract: MBR230LSFT1G MBR30100CT MBRF20H100CTG STPS30 MBR30H100CTG mbrs1645 MBRS2H100T3G T0-220 MBR20H100CTG
Contextual Info: ONSEMI Part # MBR230LSFT1G MBRS2H100T3G MBRB8H100T4G MBR10H100CTG MBRB1645T4G MBR20H100CTG MBRB20H100CTT4G MBRF20H100CTG MBRB30H30CT-1G MBR30H30CTG MBR30L45CTG MBRB3045CT-1G MBRF30H60CTG MBR30H60CTG MBRB30H60CT-1G MBR30H100CTG MBR40L45CTG MBR41H100CTG MBRB41H100CT-1G

B10H100G

Abstract: B10H100 MBR10H100CT MBR10H100CTG *10h100g
Contextual Info: MBR10H100CT SWITCHMODE Power Rectifier 100 V, 10 A Features and Benefits • • • • • • • http://onsemi.com Low Forward Voltage: 0.61 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 10 A Total 5.0 A Per Diode Leg

MBR10H100CT

Contextual Info: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

Contextual Info: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

10H150CT

Abstract: 10H200CT
Contextual Info: MBR10H100CT - MBR10H200CT CREAT BY ART Pb 10.0AMPS. Schottky Barrier Rectifiers TO-220AB RoHS COMPLIANCE Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

Contextual Info: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency

10H150CT

Contextual Info: MBR10H100CT - MBR10H200CT Pb RoHS COMPLIANCE 10.0 AMPS. Schottky Barrier Rectifiers Switchmode Power Rectifiers TO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction

B10H100G

Abstract: rectifier diode 6 amp 400 volt B10H100 100-20 diode single phase full wave rectifier MBR10H100CT MBR10H100CTG *10h100g
Contextual Info: MBR10H100CT SWITCHMODE] Power Rectifier 100 V, 10 A Features and Benefits • • • • • • • http://onsemi.com Low Forward Voltage: 0.61 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 10 A Total 5.0 A Per Diode Leg