MBR350 Search Results

Contextual Info: VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy

Contextual Info: VS-MBR350 -M3 , VS-MBR360 (-M3) www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy

MBR360

Abstract: B350 B360 MBR350 MBR350RL MBR360RL
Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap

Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with

MOTOROLA B360

Abstract: MBR340 B320 B330 B340 B350 B360 MBR320 MBR330 MBR350
Contextual Info: MOTOROLA Order this document by MBR320/D SEMICONDUCTOR TECHNICAL DATA MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with

MBR360

Abstract: Marking B360 B350 B360 MBR350 MBR350RL MBR360RL
Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap

Contextual Info: MOTOROLA Order this document by MBR350/D SEMICONDUCTOR TECHNICAL DATA A x ia l L e a d R e c tifie r s MBR350 MBR360 . . employing the Schottky Barrier principle in a large area m e tal-to-silicon power diode. S ta te -o f-th e -a rt geometry features epitaxial construction with

MOTOROLA SEMICONDUCTOR B360

Abstract: MOTOROLA B360 MBR360 B350 B360 MBR350 voltage RECTIFIER Motorola voltage rectifier diode motorola
Contextual Info: MOTOROLA Order this document by MBR350/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers MBR350 MBR360 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with

MBR360

Abstract: 20594 MBR350 MR360
Contextual Info: Bulletin PD-20594 04/01 MBR350 MBR360 3.0 Amp SCHOTTKY RECTIFIER Description/Features Major Ratings and Characteristics Characteristics MBR350 MBR360 Units IF AV Rectangular 3.0 A 50/60 V waveform VRRM The MBR350, MBR360 axial leaded Schottky rectifier has

MBR360

Contextual Info: MBR350/MBR360 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline Cathode Anode • Very low forward voltage drop RoHS • High frequency operation COMPLIANT • High purity, high temperature epoxy encapsulation for

MBR360

Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap

MBR360

Abstract: MBR350 MBR320 B320 B330 B340 B350 B360 MBR330 MBR340
Contextual Info: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MBR340 and MBR360 are Motorola Preferred Devices A xial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

B350

Abstract: B360 MBR350 MBR350RL MBR360 MBR360RL mbr360l
Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap

MBR360

Abstract: motorola b330
Contextual Info: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M BR340 and MBR360 are M otorola Preferred Devices A xial Lead R e ctifie rs . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

MBR350

Abstract: MBR360 MR360 20594
Contextual Info: Bulletin PD-20594 rev. A 03/02 MBR350 MBR360 SCHOTTKY RECTIFIER 3.0 Amp Description/Features Major Ratings and Characteristics Characteristics MBR350 MBR360 Units IF AV Rectangular 3.0 A 50/60 V waveform VRRM IFSM @ tp = 5 µs sine 460 A VF @ 3 Apk, TJ = 25°C

3504W

Abstract: MBR3505 MBR351 MBR352 MBR354
Contextual Info: MBR3505 THRU MBR3510 DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes FEATURES * Plastic case with heatsink for Maximum Heat Dissipation

MBR360

Abstract: MBR350
Contextual Info: MBR350 ~ MBR360 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 50 - 60 Volts IO : 3.0 Amperes DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Pb / RoHS Free

MBR360

Abstract: Diode MBR350
Contextual Info: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR340 and MBR360 are Motorola Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

MBR360

Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap

MBR360RLG

Abstract: MBR350 MBR350RL MBR350RLG MBR360 MBR360G MBR360RL
Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap

C-16

Abstract: MBR350 MBR360
Contextual Info: MBR350, MBR360 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

Contextual Info: VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy

Contextual Info: MBR350 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition)65’ V(RRM)(V) Rep.Pk.Rev. Voltage50 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.80 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)9.4