LCE2009S Search Results
LCE2009S Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| LCE2009S | Philips Semiconductors | NPN microwave power transistors | Original | 128.42KB | 16 | ||
| LCE2009S | Philips Semiconductors | Microwave Linear Power Transistor | Original | 255.35KB | 8 | ||
| LCE2009S | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 40.75KB | 1 | ||
| LCE2009S | Philips Semiconductors | NPN microwave power transistors | Scan | 372.49KB | 13 | ||
| LCE2009SA | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 40.75KB | 1 | ||
| LCE2009SA | Philips Semiconductors | Microwave Linear Power Transistors | Scan | 265.94KB | 8 |
LCE2009S Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: N AMER PHILIPS/DISCRETE i i bbS3T3i ObE J> a • MAINTENANCE TYPES LBE/LCE1004R LBE/LCE1010R for new design use LBE/LC E2003S and LBE/LCE2009S T - S 3 -OS' M IC R O W A V E LIN EAR PO W ER T R A N S IST O R S N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz. |
OCR Scan |
lbe/lce1004rlbe/lce1010re2003slbe/lce2009s+4 | |
LBE2008T
Abstract: LCE2008T LGE2008T
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OCR Scan |
lbe/lce2009slbe2008tlce2008tlge2008t | |
LBE1004R
Abstract: amplifier marking _1 TDA 5331 amplifier marking code D auo 002 marking S3 amplifier LBE1010R LCE1004R LCE1010R Marking LBE
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OCR Scan |
lbe/lce1004rlbe/lce2003slbe/lce2009slbe/lce1010r+12 | |
LBE2003S
Abstract: LBE2009S LCE2009S SC15
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Original |
lbe2003slbe2009slce2009sot441a+1 | |
LBE2003S
Abstract: LCE2003S sfe 5,5 ma LBE2009S LBE2009SA LCE2009S LCE2009SA 46 MARKING CODE
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OCR Scan |
lbe/lce2003slbe/lce2009slbe/lce2009sa7110fl2b+8 | |
IC BL 176AContextual Info: LBE/LCE2003S LBE/LCE2009S LBE/LCE2009SA P H I L I P S I N T E R N A T I O N A L S b J> m E 7 1 1 f l 2 b Q D M b i a MICROWAVE LINEAR POWER TRANSISTORS S < 1 8 2 • P H I ^3 NPN transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz. |
OCR Scan |
lbe/lce2003slbe/lce2009slbe/lce2009salbe2003s+6 | |
LBE2003S
Abstract: LBE2009S LCE2009S SC15
|
OCR Scan |
lbe2003slbe2009slce2009sot441a+1 | |
409 Marking Code
Abstract: Data Handbook sc15
|
OCR Scan |
lbe2003slbe2009slce2009sot441a+3 | |
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Contextual Info: J_L N AMER PHILIPS/DISCRETE MAINTENANCE TYPE OLE D b b 5 3 ^ 3 i o o m c]Ec] i L for new design use LBE/LCE2009S LBE2008T LCE2008T T-ZZ-OS MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. |
OCR Scan |
lbe/lce2009slbe2008tlce2008t | |
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Contextual Info: N AMER PHILIPS/DISCRETE ^53=131 O D l M i n b OhE D l LB E /LC E 2003S LB E /LC E 2009S T - 3 3 -O S ' MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold metallization |
OCR Scan |
2003s2009slbe2003slbe2009s+2 | |
bel 187 transistor
Abstract: RTC406 LBE2003S LBE2009S LCE2003S LCE2009S BEL 187 npn
|
OCR Scan |
lbe/lce2003slbe/lce2009slbe2q03slbe2009s+7 | |
BPW22A
Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
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OCR Scan |
bs9000d3007he4000b80ribution+10 | |
MRF648
Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
|
Original |
2n59442n59452n59462n6082+16 | |
bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
|
OCR Scan |
1n8211n821a1n8231n823a+16 | |
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
|
OCR Scan |
sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7 | |
SD1446
Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
|
Original |
bgy916blf145blf175blf177+16 | |
LFE15
Abstract: LAE4001R BLS2731-50 BLS2731-10
|
OCR Scan |
bls2731-10bls2731-20bls2731-50bls2731-110+8 | |
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Contextual Info: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Microwave transistors RF & MICROWAVE SEMICONDUCTORS & MODULES CONTINUOUS POWER TYPES f ^CE *C P r L1 ^ Gp° 3 GHz) (V) (mA) (mW) (dB) 1 2 2 2 2.1 2.1 2.1 2.3 2.3 4 4 4.2 4.2 4.2 20 18 |
OCR Scan |
lee1015talbe2003slbe2009slce2009s+6 | |
LTE-3201
Abstract: FO-163 lte4002s LBE2003S LBE2009S LCE2003S LCE2009S LTE21009R LUE2009S
|
OCR Scan |
bs3t31d01fc6000qot-100+11 | |
BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
|
OCR Scan |
lcd01bgy41bfw10 fet transistorcqy58+7 | |
FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
|
OCR Scan |
ba220ba221ba223ba281+16 | |
1B200Y
Abstract: MRB11040W
|
OCR Scan |
rz2731b16wrz3135b14wrz2731b32wrz3135b28w+8 | |
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Contextual Info: N AMER PHILIPS/DISCRETE E5E D btiS3131 DOltEBS S • T -Z S-O l Power Devices MICROWAVE TRANSISTORS LINEAR POWER TRANSISTORS TYPE NO. PACKAGE OUTLINE f Vce GHZ y f” Tc ' (mAX ' - - PL1<i. (W Gpo* (dB) CLASS A, MEDIUM POWER LAE6000Q LBE2003S LCE2003S |
OCR Scan |
btis3131lae6000qlbe2003slce2003s+6 | |
2SC635
Abstract: MHW820-1 2SC636 TP3008 sd1393 2sc1729 TP3034 SD1470 2SC2897 TP5051
|
Original |
2sc12572sc12582sc12592sc1605a+15 | |