1004R Search Results

Contextual Info: ADVANCED POW ER Te c h n o l o g y OD 1004RBN OS 1000V 4.4A 4.00Í1 1004R2BN 1000V 4.0A 4.20Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 1004RBN APT

OC203

Contextual Info: APT 904RGN APT 1004HGN 900 1000 Drain-Source Voltage APT APT 904R2GN 1004R2GN 900 1000 UNIT Volts Continuous Drain Current @ Tc - 25 C 3.3 3.0 *0M Pulsed Drain Currant ® 13.2 12 V GS Gate-Source Voltage ±30 Volts Total Power Dissipation @ Tc » 25°C 100

APT1004RKN

Abstract: APT1004R2KN 1004r
Contextual Info: D TO-220 G 1004RKN 1004R2KN S 1000V 3.6A 4.00 Ω 1000V 3.5A 4.20 Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter V DSS 1004R2KN 1004RKN

Contextual Info: ADVANCED POIilER T EC H N O L OGY b lE •K W/<m w POWER MOS IV D ■ OS ST TO T 000076«} T37 M A V P A d v a n ced po w er Te c h n o l o g y 1004RCN 1000V 3.6A APT904RCN 900V 3.6A 1004R2CN 1000V 3.3A APT904R2CN 900V 3.3A 4.00Q 4.00Q 4.20Q 4.20Q

Contextual Info: N AMER PHILIPS/DISCRETE i i bbS3T3i ObE J> a • MAINTENANCE TYPES LBE/1004R LBE/LCE1010R for new design use LBE/LC E2003S and LBE/LCE2009S T - S 3 -OS' M IC R O W A V E LIN EAR PO W ER T R A N S IST O R S N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.

LBE1004R

Abstract: amplifier marking _1 TDA 5331 amplifier marking code D auo 002 marking S3 amplifier LBE1010R LCE1004R LCE1010R Marking LBE
Contextual Info: OLE T> N AMER P H IL IP S /D IS C R E T ! •FbbSB^l MAINTENANCE TYPES Q O lim ? JI' for new design use LBE/LCE2003S and LBE/LCE2009S S ■ LBE/1004R LBE/LCE1010R MICROWAVE LINEAR POWER TRANSISTORS N-P-N bipolar transistors for use in a common-emitter class-A linear power amplifier up to 1 GHz.

Contextual Info: • R A dvanced W .Æ P o w e r M Te c h n o l o g y * A P T10 0 4 R K N AP T10 0 4 R 2 K N 10 0 0 V 10 0 0 V 3 .6 A 4 .0 0 i i 3 .5 A 4 .2 0 Ü POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

sml1004r2an

Abstract: sml1004ran
Contextual Info: bDE ]> SENELAB PLC 0133107 D D0 073 fl b4 4 ISMLB MOS POWER =Vr = 4 1004RAN 1000V 3.9A 4.00Q SML904RAN 900V 3.9A 4.00Q 1004R2AN 1000V 3.5A 4.2012 SML904R2AN 900V 3.5A 4.20Q SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

1004R2BN

Abstract: apt1004rbn APT1004R2BN 1004rbn
Contextual Info: D TO-247 G 1004RBN S POWER MOS IV 1000V 4.4A 4.00Ω 1004R2BN 1000V 4.0A 4.20Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

APT1004RKN

Contextual Info: • r IT J M A dvanced R ow er Te c h n o l o g y 1004RKN 1004R2KN 1000V 3.6A 4.00Q 1000V 3.5A 4.20Q POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: Tc = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter

Contextual Info: 0 2 5 7 cl 0 cì 0005170 2ST A d van ced P o w er Te c h n o l o g y 0 POWER MOS IV 1004RBN APT904RBN 1004R2BN APT904R2BN 1000V 900V 1000V 900V 4.4A 4.4A 4.0A 4.0A 4.00Œ 4.00ft 4.20& 4.20Œ N -C H A N N EL ENHANCEM ENT M O DE HIGH VOLTAGE POWER MOSFETS

rtc112

Abstract: LKE1004R LTE21009R M3 marking ZI Marking Code transistor
Contextual Info: QbE D AUER PHILIPS/DISCRETE MAINTENANCE TYPE f c . t . S 3 ci 3 1 0 0 1 4 ^ 3 3 I {for new design use L T E 2 1 0 0 9 R • LKE1Ö04R T - 33-öS- MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor fo r use in a com mon-emitter class-A linear power am plifier up to 1 G H z.

sml1004r2bn

Abstract: 1004r
Contextual Info: SEHELAB PLC bGE D • DDGOLGfl T2b ■ S M L B MOS POWER 4 5^5 'T'- 3e! - I S 1004RBN 1000V 4.4A 4.0012 SML904RBN 900V 4.4A 4.0012 1004R2BN 1000V 4.0A 4.2012 SML904R2BN 900V 4.0A 4.2012 SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

apt1004ran

Abstract: 1004RAN 1004R2AN 10ILU 1004R2 APT904R2AN APT1004R2AN APT904RAN APT 1004RAN
Contextual Info: ADVANCFD P Oü l F R TECHNOLOGY od MT E X o \ D WÊ O O OO S DM K 35D M AVP A d va n c ed P o w er - p 3°i \3 Technology O S P n W P R m a c ix/TM r U W c n M O S IV 1004RAN APT904RAN 1004R2AN APT904R2AN 1000V 900V 1000V 900V 3.9A 3.9A 3.5A 3.5A 4.00 £2

APT1001RD

Abstract: APT5023
Contextual Info: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.

LE3100

Abstract: kbc 1098 pmb 7850 Intel core i7 0300LS Socket AM2 delta wireless doorbell IC 501 south bridge SIS 968 MOTHERBOARD pcb CIRCUIT diagram intel core 2 duo e7500
Contextual Info: Intel 3100 Chipset Datasheet June 2007 Order Number: 313458-004US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS

1004rbn

Abstract: APT904RBN APT1004 APT1004R2BN APT1004RBN APT904R2BN
Contextual Info: 0 2 5 7 cl 0 tì 0 0 0 2 1 7 0 25T A dvanced P o w er Te c h n o l o g y 1004RBN 1000V 4.4A 4.00Q APT904RBN 900V 4.4A 4.00D 1004R2BN 1000V 4.0A 4.20Q APT904R2BN 900V 4.0A 4.20Q _ POWER MOS IV® N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

sml1004r2Cn

Abstract: sml1004rcn
Contextual Info: SEMELAB bDE PLC 61331Ô 7 ï 00007^4 III! M73 ISMLB MOS POWER 4 -13 llll 1004RCN SML904RCN 1004R2CN SML904R2CN SEME LAB 1000V 900V 1000V 900V 3.6A 3.6A 3.3A 3.3A 4.00Í1 4.00Q 4.2012 4.20Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

MAX543BESA

Contextual Info: 19-1972, Rev 1; 10/92 CMOS, 12-Bit, Serial-Input M ultiplying DAC _ F e a tu re s ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ O rd erin g In fo rm a tio n The MAX543 contains a 12-bit R-2R type DAC, a serial-in parallel-out shift register, a DAC register and control

Mys 99 178

Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102
Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B

Contextual Info: SEMELAB PLC_ bOE D • Ö1331Ö7 □□□OLbä = rr= 4T0 ■ SMLB MOS POWER 4 “ im “ SEME LAB 1004R2KN 1000V 3.5A 4.20 Q N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 2 5 °C unless otherwise specified.

Contextual Info: A dvanced P o w er Te c h n o lo g y * 1004RKN 1004R2KN 1000V 3.6A 4.00 Q 1000V 3.5A 4.20 Q POWER MOS IV' N -C H A NN EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS 'd ’d m ^GS PD T j’^STG All Ratings: Tc = 25°C unless otherwise specified.

eci 2510

Abstract: 1022RW 1011RW
Contextual Info: Micr oP ower MicroP oPo Dir ect Direct 10W, Wide Input Range Single and Dual Output DC/DC Converters Key Features ! 2:1 Input Range ! 12W Output Power ! Meets EN55022 Class “A” B1000RW Series ! Compact 1” x 2” Case ! 1500 VDC I/O Isolation ! Low Cost

1004R2BN

Abstract: APT904RBN Apt904r2bn 1004rbn
Contextual Info: O A d va n ced P o w er Te c h n o l o g y D 1004RBN APT904RBN 1004R2BN APT904R2BN O S POWER MOS IV 1000V 900V 1000V 900V 4.0012 4.0012 4.2012 4.2012 4.4A 4.4A 4.0A 4.0A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings. Tc = 25°C unless otherwise specified.