1004R2 Search Results

OC203

Contextual Info: APT 904RGN APT 1004HGN 900 1000 Drain-Source Voltage APT APT 904R2GN 1004R2GN 900 1000 UNIT Volts Continuous Drain Current @ Tc - 25 C 3.3 3.0 *0M Pulsed Drain Currant ® 13.2 12 V GS Gate-Source Voltage ±30 Volts Total Power Dissipation @ Tc » 25°C 100

Contextual Info: ADVANCED POW ER Te c h n o l o g y OD APT1004RBN OS 1000V 4.4A 4.00Í1 1004R2BN 1000V 4.0A 4.20Í1 POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. APT 1004RBN APT

APT1004RKN

Abstract: APT1004R2KN 1004r
Contextual Info: D TO-220 G APT1004RKN 1004R2KN S 1000V 3.6A 4.00 Ω 1000V 3.5A 4.20 Ω POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter V DSS 1004R2KN APT1004RKN

Contextual Info: ADVANCED POIilER T EC H N O L OGY b lE •K W/<m w POWER MOS IV D ■ OS ST TO T 000076«} T37 M A V P A d v a n ced po w er Te c h n o l o g y APT1004RCN 1000V 3.6A APT904RCN 900V 3.6A 1004R2CN 1000V 3.3A APT904R2CN 900V 3.3A 4.00Q 4.00Q 4.20Q 4.20Q

Contextual Info: • R A dvanced W .Æ P o w e r M Te c h n o l o g y * A P T10 0 4 R K N AP T10 0 4 R 2 K N 10 0 0 V 10 0 0 V 3 .6 A 4 .0 0 i i 3 .5 A 4 .2 0 Ü POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.

sml1004r2an

Abstract: sml1004ran
Contextual Info: bDE ]> SENELAB PLC 0133107 D D0 073 fl b4 4 ISMLB MOS POWER =Vr = 4 SML1004RAN 1000V 3.9A 4.00Q SML904RAN 900V 3.9A 4.00Q 1004R2AN 1000V 3.5A 4.2012 SML904R2AN 900V 3.5A 4.20Q SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

1004R2BN

Abstract: apt1004rbn APT1004R2BN 1004rbn
Contextual Info: D TO-247 G APT1004RBN S POWER MOS IV 1000V 4.4A 4.00Ω 1004R2BN 1000V 4.0A 4.20Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage

APT1004RKN

Contextual Info: • r IT J M A dvanced R ow er Te c h n o l o g y APT1004RKN 1004R2KN 1000V 3.6A 4.00Q 1000V 3.5A 4.20Q POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: Tc = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter

Contextual Info: 0 2 5 7 cl 0 cì 0005170 2ST A d van ced P o w er Te c h n o l o g y 0 POWER MOS IV APT1004RBN APT904RBN 1004R2BN APT904R2BN 1000V 900V 1000V 900V 4.4A 4.4A 4.0A 4.0A 4.00Œ 4.00ft 4.20& 4.20Œ N -C H A N N EL ENHANCEM ENT M O DE HIGH VOLTAGE POWER MOSFETS

sml1004r2bn

Abstract: 1004r
Contextual Info: SEHELAB PLC bGE D • DDGOLGfl T2b ■ S M L B MOS POWER 4 5^5 'T'- 3e! - I S SML1004RBN 1000V 4.4A 4.0012 SML904RBN 900V 4.4A 4.0012 1004R2BN 1000V 4.0A 4.2012 SML904R2BN 900V 4.0A 4.2012 SEME LAB N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

apt1004ran

Abstract: 1004RAN 1004R2AN 10ILU 1004R2 APT904R2AN APT1004R2AN APT904RAN APT 1004RAN
Contextual Info: ADVANCFD P Oü l F R TECHNOLOGY od MT E X o \ D WÊ O O OO S DM K 35D M AVP A d va n c ed P o w er - p 3°i \3 Technology O S P n W P R m a c ix/TM r U W c n M O S IV APT1004RAN APT904RAN 1004R2AN APT904R2AN 1000V 900V 1000V 900V 3.9A 3.9A 3.5A 3.5A 4.00 £2

1004rbn

Abstract: APT904RBN APT1004 APT1004R2BN APT1004RBN APT904R2BN
Contextual Info: 0 2 5 7 cl 0 tì 0 0 0 2 1 7 0 25T A dvanced P o w er Te c h n o l o g y APT1004RBN 1000V 4.4A 4.00Q APT904RBN 900V 4.4A 4.00D 1004R2BN 1000V 4.0A 4.20Q APT904R2BN 900V 4.0A 4.20Q _ POWER MOS IV® N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

sml1004r2Cn

Abstract: sml1004rcn
Contextual Info: SEMELAB bDE PLC 61331Ô 7 ï 00007^4 III! M73 ISMLB MOS POWER 4 -13 llll SML1004RCN SML904RCN 1004R2CN SML904R2CN SEME LAB 1000V 900V 1000V 900V 3.6A 3.6A 3.3A 3.3A 4.00Í1 4.00Q 4.2012 4.20Í2 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS

Contextual Info: SEMELAB PLC_ bOE D • Ö1331Ö7 □□□OLbä = rr= 4T0 ■ SMLB MOS POWER 4 “ im “ SEME LAB 1004R2KN 1000V 3.5A 4.20 Q N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tr = 2 5 °C unless otherwise specified.

1004R2BN

Abstract: APT904RBN Apt904r2bn 1004rbn
Contextual Info: O A d va n ced P o w er Te c h n o l o g y D APT1004RBN APT904RBN 1004R2BN APT904R2BN O S POWER MOS IV 1000V 900V 1000V 900V 4.0012 4.0012 4.2012 4.2012 4.4A 4.4A 4.0A 4.0A N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings. Tc = 25°C unless otherwise specified.

Contextual Info: ADVANCED POWFR TECHNOLOGY M^E OSST'iG'i 0 0 G 0 5 0 4 D AV P A dvanced POWER 'T-3PM 3 Te c h n o l o g y O D i 35 0 • # O S 1WTU POWER MOS IV APT1004RAN 1000V 3.9A 4.00 Q. APT904RAN 900V 3.9A 4.00 fl 1004R2AN 1000V 3.5A 4.20 £1 APT904R2AN 900V 3.5A 4.20 £2

Contextual Info: A dvanced P ow er Te c h n o lo g y O D APT1004RKN 1004R2KN O s 1000V 3.6A 4.0012 1000V 3.5A 4.20U R F íT E r MOS IV'01 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S Symbol V DSS 'dm V GS PD VSTG A ll R a tin g s: T c = 2 5 °C u n le ss o th e rw is e sp e cifie d .

APT904RBN

Contextual Info: 3* O D o S W E R ADVANCED POW ER Te c h n o l o g y M O S APT1004RBN APT904RBN 1004R2BN APT904R2BN H S 1000V 900V 1000V 900V 4.4A 4.4A 4.0A 4.0A 4.00ß 4.00Q 4.20^ 4.20Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T IN G S

sml1004r2Gn

Abstract: sml1004rgn
Contextual Info: SEM ELAB PLC bOE D • 0133107 0000Ô3G 234 « S t l L B MOS POWER 4 "T- SEME SML1004RGN SML904RGN 1004R2GN SML904R2GN LAB 1000V 900V 1000V 900V 4.0012 4.0012 4.2012 4.20Í2 3.3A 3.3A 3.0A 3.0A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS