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LBE2008T Abstract: LCE2008T LGE2008T Contextual Info: _ I_I_ N AMER PHILIPS/DISCRETE GbE D I • OOmTST 1 ■ LBE2008T LCE2008T MAINTENANCE TYPE for new design use LBE/LCE2009S T -3 3 .-0 S T MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.	OCR Scan	lbe/lce2009s lbe2008t lce2008t lge2008t	PDF

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LBE2008T

Abstract: LCE2008T LGE2008T
Contextual Info: _ I_I_ N AMER PHILIPS/DISCRETE GbE D I • OOmTST 1 ■ LBE2008T LCE2008T MAINTENANCE TYPE for new design use LBE/LCE2009S T -3 3 .-0 S T MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.

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