KM416C1200A Search Results

Contextual Info: KM416C1000A, KM416C1200A KM416V1 OPPA, KM416V12PPA CMOS DRAM 1M x 16Bit CM O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: CMOS DRAM KM416C1200A/A-L/A-F 1M x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC KM416C1200A-6/A-L6/A-F6 60ns 15ns 110ns KM416C1200A-7/A-L7/A-F7 70ns 20ns 130ns KM416C1200A-8/A-L8/A-F8 80ns 20ns

Contextual Info: KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A CMOS DRAM 1M x 16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KM416C1000A, KM416C1200A KM416V1 OPPA, KM416V12PPA CMOS DRAM 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

KM416C1200a

Abstract: km416c1200 KM416V1000A samsung pram V1000A C1200A C1000A
Contextual Info: KM416C1000A, KM416C1200A KM416V1000A, KM416V1200A CMOS DRAM 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 1,048,576 x16 bit Fast Page M ode C M O S D RAM s. Fast P age M ode o ffe rs high speed random a c c e s s o f m em o ry ce lls w ith in th e sa m e row. P o w e r su p p ly vo lta g e + 5 .0 V o r + 3 .3V , refresh

KM416C1200AJ

Abstract: ra57
Contextual Info: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification

tb41

Contextual Info: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The

Contextual Info: DRAM MODULE KMM372C125AJ KMM372C125AJ Fast Page Mode 2Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM372C125A is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C125A consists of four CMOS

KM44C4000aS 6

Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6

Contextual Info: TABLE OF CONTENTS I. PRODUCT GUIDE 1. Introduction. 11 2. Product G u id e . 18 3. DRAM Ordering System. 23

Contextual Info: KMM5322200AW DRAM Module ELECTRONICS KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS

Contextual Info: DRAM MODULE KMM5322200AW/AWG KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS

KM416C1200AJ

Contextual Info: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The Samsung KM M 5321200AW consists of tw o CMOS

Contextual Info: KMM5321200AW D RAM Module ELECTRONICS KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321200AW consists of two CMOS

KM44C1003CJ

Contextual Info: KMM5361203AW/AWG DRAM MODULE KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The • Part Identification

Contextual Info: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16, 1K Refresh, 5V FEATURES GENERAL DESCRIPTION • Performance Range: The Samsung KMM364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The KMM372C225A - 6 KMM372C225A - 7

KM416C1200AJ-6

Contextual Info: 8MB 72 PIN FPM DRAM SIMM With 1Mx16 5VOLT TS2M3260R Description Features The TS2M3260R is a 2M by 32-bit dynamic RAM • 2,097,152-word by 32-bit organization. module with 4 pcs of 1Mx16 DRAMs assembled on the • Fast Page Mode operation. printed circuit board.

Contextual Info: KMM364C224AJ DRAM MODULE KMM364C224AJ Fast Page Mode 2Mx64 DRAM DIMM, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C224AJ is a 2M bit x 64 Dynamic RAM high density m em ory m odule. The • Performance Range: Samsung KMM364C224AJ consists of eight CMOS

Contextual Info: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16,1K Refresh, 5V G E N E R A L DESCRIPTION FE A T U R E S The Samsung KMM 364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KM M 364C124AJ consists of four C M O S

KM416C1200AJ

Abstract: km44c1003cj kmm5361203aw
Contextual Info: DRAM MODULE 4 Mega Byte KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM , 1K Refresh, 5V Using 1Mx16 B/W DRAM and 1Mx4 Quad CAS DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The