IRFZ35 Search Results

Contextual Info: IRFZ35 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D)18 @Temp (øC)100 IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)90 Minimum Operating Temp (øC)-55õ

irfz34

Abstract: IRFZ35 c439 diode diode C438
Contextual Info: HE D | 4055452 000ßbö4 4 | Data Sheet No. PD-9.509A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IÖR AVALANCHE AND dv/dt RATED 1 7 5 °C OPERATING TEM PERATURE HEXFET TRANSISTORS IRFZ34 IRFZ35 ;n N-CHANNEL Product Summary 60 Volt, 0.050 Ohm HEXFET

1rfz44

Abstract: MFE9200 1rfz30 IRFZ12 1RFZ22 VN10LP irfu9212 irfu9220 irfu9222 irfu9022
Contextual Info: - /m Ta=25l3 Vd s or Vd g Vg s !l (V) (V) t £J € *± € % Pd Id Ig s s Vg s th) Idss * /CH * /CH (A) (nA) m Vg s (V) Vd s (V) C M A) min max (V) (V) ft % 245 Ciss g fs Coss Crss & *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max)

1RFZ44

Abstract: 1RL520 1RFZ22 IRFZ30 IRFZ41 1RFZ40 IRF145 1RL540 IRFZ45 1xys
Contextual Info: - f f t * £ fê Ta=25^ M € tí: € t V d s Vg s or Vd g * (V) 1RFZ35 1RFZ40 IR IR N N IRFZ42 IRFZ44 1RFZ45 IRH150 IRH254 1RH450 IR IR ¡R IR IR IR N N N N N N IRL51Q 1RL52Q IRL530 IRL540 IRLZ14 1RLZ24 IRLZ34 1RLZ44 1XTH5N100 IR IR IR IR IR IR IR IR IXYS

Contextual Info: S A M S UN G E L E C T R O N I C S INC bHE D • T T b M l M S 0 0 1 2 4 2 5 fl?T ■ SM6K IRFSZ34/35 IRFSZ30/32 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

IRFZ30

Abstract: IRFZ45 IRFZ32 irfz IRFZ12 THOMSON DISTRIBUTOR 58e d IRFZ20 IRFZ25 THOMSON 58E THOMSON 58E CASE OUTLINE
Contextual Info: THOriSÜN/ DISTRIBUTOR SflE D • ÌOat.073 OOOSaDl HEXFET Powermosfets L^ l m TCSK intemaraonal Rectifier Plastic Insertable Package T0-220 N-Channel Part Number V p s Drain Source Voltage Volts R0S(on) On-State Resistance (Ohms) Iq Continuous Drain Current

1RFZ44

Abstract: IRFZ30 1RFZ22 1rfz20 IRF215 IRFZ12 IRF145 IR1531 IRFZ45 rfz34
Contextual Info: £ € I À t Vd s Vg s W. Ta=25°C Id Ig s s Pd Vg s th) Id s s or * /CH * /CH (A) (W) min max (V) (V) % & Vd s = Vg s D S (o n ) te (Ta=25‘C) I d ( o ii ) Ciss g fs Coss Crss Vg s =0 (max) ♦typ V g s C O ) (V) (*typ) (*typ) (*typ) (max) (max) (max)

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IRFZ34

Abstract: IRFZ30 irfz34 mosfets
Contextual Info: IRFZ34/35 IRFZ30/32 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower Ros o n Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

IRFZ25

Abstract: IRF512 IRF51 IRFZ42 IRFZ30
Contextual Info: n c A r c International üç»!Rectifier I Power MOSFETs Plastic Insertable Package TO-220 N-Channel Part Number IRFZ12 IRFZ10 IRFZ22 IRFZ20 IRFZ32 IRFZ30 IRFZ42 IRFZ40 Vqs Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) ID Continuous Drain Current

irfz34

Abstract: diode sg 47
Contextual Info: N-CHANNEL POWER MOSFETS IRFZ34/35 FEATURES • • • • • • • Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

RfZ34

Abstract: irfsz32 irfsz35
Contextual Info: IRFSZ34/35 IRFSZ30/32 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220F Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRFZ30

Abstract: irfz34 IRFZ35 IRFZ34 mosfet
Contextual Info: S A M S UN G E L E C T R O N I C S INC b4E D • 7^4142 IRFZ34/35 IRFZ30/32 Ü Ü 1 2 44 S bbê ■ SHGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

1rf634

Abstract: IRFZ25 international rectifier 9509 9374 9313 irf635 IRF71Q 9327
Contextual Info: IO R PLASTIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER 5bE D 4 Ô SS 4S E O G I D S S S 3 TO-220 Package '- • N-CHANNEL Types Vos V fifl OU Po pulsed max Ü A A W 210 190 120 100 60 56 40 33 150 150 90 90 60 60 36 36 28.0 25.0 14.0

1RFZ40

Abstract: MFE9200 1rfz44 1RFD123 irfz12 IRF145 irfu9220 irfu9222 IRFZ45 IRH450
Contextual Info: - M € tí: f ft * t Vds or Vd g € £ fê Vg s Ta=25^ Id Pd * /CH * /CH IGSS V g s th) IDSS ft % Bg. Ciss Coss Crss ft & *typ (A) Id (A) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max) (pF) (pF) (pF) Id (A) m % Vd s (V) ínA) Vg s (V) 1R F Z 3 5 IR N

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

IFRZ44

Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
Contextual Info: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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