IRFAC42 Search Results

Contextual Info: IRFAC40, IRFAC42 HARRIS S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 • 6 .2 A and 5.4A , 60 0V Description • r D S O N = 1 These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRFAC42 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)20 I(D) Max. (A)5.4 I(DM) Max. (A) Pulsed I(D)3.4 @Temp (øC)100 IDM Max (@25øC Amb)22 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ

Contextual Info: IRFAC42R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)20 I(D) Max. (A)5.4# I(DM) Max. (A) Pulsed I(D)3.4# @Temp (øC)100 IDM Max (@25øC Amb)22# @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55õ

Contextual Info: • 4 3 0 5 2 7 1 0 0 S 4 0 7 Ö 1?B HAS IRFAC40R IRFAC42R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated A ug ust 1991 Features Package T0-204A A BOTTOM VIEW • 6.2A and 5.4A , 6 0 0V • rDS on = 1 -2 f i and 1-6 f i SOURCE • R epetitive Avalanche Ratings

Contextual Info: HE D I MflSSMSa GOGiaHt 7 | Data Sheet No. PD-9.587A INTERNATIONAL R E C T I F I E R ' - T - ß INTERNATIONAL RECTIFIER J - / 3 TO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFAC40 IRFAC42 i LI N-CHANNEL 600 Volt, 1.2 Ohm HEXFET T0-204AA TO-3 Hermetic Package

C40r

Abstract: IRFA ndam
Contextual Info: m IRFAC40R IRFAC42R H a r r is N -Channel Power MOSFETs Avalanche Energy Rated August 1991 Package F e a tu re s • T O -2 0 4 A A BOTTOM VIEW 6 .2 A a n d 5.4 A , 6 0 0 V • r D S on = 1 -2 f i a n d 1-6 n • R e p e titiv e A v a la n c h e R a tin g s

Contextual Info: IRFAC40, IRFAC42 S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 • 6.2A and 5.4A, 600V Description • rDS ON = 1.2Ω and 1.6Ω These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFAC40R

Abstract: MOSFET IRF VDs 600v RG-910 IRFAC42R irfac-types FAC42
Contextual Info: Rugged Power MOSFETs IRFAC40R, IRFAC42R File Num ber 2 1 5 6 Avalanche-Energy-Rated N-Channel Power MOSFETs 6.2A and 5.4A, 600V fDsion = 1.20 and 1.60 N-CHANNEL ENHANCEMENT MODE Features: • Repetitive Avalanche Ratings m Sim ple Drive R equirem ents ■ Ease o f Paralleling

MOSFET TEST SIMPLE Procedures

Abstract: Simple test MOSFET Procedures 4A,600V IRFAC40 IRFAC42 TB334
Contextual Info: IRFAC40, IRFAC42 Semiconductor 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 • 6.2A and 5.4A, 600V Description • rDS ON = 1.2Ω and 1.6Ω These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRFAC40, IRFAC42 HARRIS S E M I C O N D U C T O R 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs January 1998 • 6.2A and 5.4A, 600V Description • These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

1RF530

Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
Contextual Info: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)

IRF470

Abstract: IRFP240R IRF840CF IRF449 IRF340A irf520 power IRF341R IRFP20 irf460 to-247 IRF331R
Contextual Info: STI Type: IRF331 Notes: Breakdown Voltage: 350 Continuous Current: 5.5 RDS on Ohm: 1.0 Trans Conductance Mhos: 3.0 Trans Conductance A: 3.0 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 30 Resistance Switching toff: 55 Resistance Switching ID: 3.0

irf460 to-247

Abstract: IRF450R IRF331R IRF460 IRF840R IRF341R irf362 IRFP450R THOMSON DISTRIBUTOR 58e d irfp462
Contextual Info: THOnSON/ DISTRIBUTOR Power MOSFETs SflE D • T02bñ73 0G0S711 bST ■ T C S K - _ _ Rugged-Series Power MOSFETs — N-Channel continued Package ft JP Maximum Ratinas BV d s S (V) ■d s (A) 'DS(O N) OHMS eAS (mj) 350

1RF9540

Abstract: IRF9141 IRF9142 IRF9510 IRF9523 IRF9612 IRF9613 IRF9540 IRF9541 IRF9620
Contextual Info: - 25 6 - m a tt f m ± t Vg s t Vd s or Vd g % V (V) « Æ n fê (Ta=25^) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s min (nA) Vg s (V) (UA) Vd s (V) (V) max (V) % Id (nA) Í# F Ds(on) Vd s = Vg s te (Ta=25t) b(Qn) Ciss g fs Coss Crss ft JE m m V g s =0

1rf740

Abstract: 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13
Contextual Info: - 254 - f M £ tt ft X Vd s or € £ Vg s < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) % Vi>s= ft Ta=25‘ C) I d (on) D s(o n ) g fs Ciss Coss Crss (*typ) (* typ) (*typ) * /CH min Vg s m m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1-

IRF449

Abstract: 1RF9130 1RF431 IRF460 irf9243 IRFAG52 2N6B04 irf420 IRF9141 2N6761
Contextual Info: HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER TO-3 Package INTERNATIONAL R ECTIFIER SbE D 4055455 OOlOSbS □ • I«R T - 3 ^ - 0 3 N-CHANNEL Types % V IRF451 IRF453 2N6769 IRF441 IRF443 1RF431 2N6761 IRF433 IRF421 IRF423 IRF460 IRF462 IRF450 2N6770 IRF452

RF432

Abstract: IRF449 IRF460 IRFac32
Contextual Info: International ID o H l f i û r [t S HEXFFT MOSFETs r ^ « e c im e r Hermetic Package 7Ü-3 N-Channel Part Number V q s Drain Source Voltage Volts IRF422 IRF420 /RF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 IRF450 2N6770 IRF462 IRF460 500 IRFAC32

1RF640

Abstract: 1rf740 irf810 1RF540 1RF840 IRFAE50 1RF630 IRF612 irf9620 IRF530
Contextual Info: - 253 f m * V Vd s £> tt £ £ Vg s Id Igss Pd V g s th loss or € * Vdg Hr V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) F Ds(on) Vd s = Vg s Id (mA) 14 ft eg. tS (Ta=25*0) (Ta=25T3) lo(on) Ciss g fs Coss ft & 11 m Vg s =0 (max)

1RF530

Abstract: 1RF540 1rf630 RF543 BS107PT BS250F SD210 SD211 SD212 TD-12
Contextual Info: - 244 - ä! € tt f # t Vd s * $ fg Vg s Ta=25‘ C ie. IGSS Pd Id Vg s ID S S th) or € * /CH * /CH (A) m (Ta^'C) Ciss max Vd s (V) Vg s (V) 14 Coss Crss (V) (nA) SD2 1 0 CALOGIC N 30 ± 40 5 0m 1. 2 SD211 CALOGIC N 30 25 50m 1. 2 SD212 CALOGIC N 10 ± 40

IRF448

Abstract: IRF449 irf9243 IRFAG52 IRFAF30 irf420 IRF460 IRF9140 THOMSON 58E THOMSON 58E CASE OUTLINE
Contextual Info: THONSON/ DISTRIBUTOR SflE D • TD5t,fl73 DDDSflOfl T4b ■ TCSK W ggggg H EX FETw »«, — r c e c u iie r Hermetic Package l TO-3 N-Channel Part Number V p s Drain Source Voltage Volts IRF422 IRF420 IRF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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