NDAM Search Results

Contextual Info: •■ /n . ^ SDRAM Rev.1.1 Jun. ’98 a O H IU M C U nDAM 64M bit Synchronous DRAM MITSUBISHI LSIS M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 2097152-WORD x 8-BIT) M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 1048576-WQRD x 16-BIT)

AN7317

Abstract: AN7316 IC for cassette preamp IC audio power amp
Contextual Info: A N 7316 AN7316 Dual Recording and Playback Pre-Amplifier IC for Single/Double Cassette Unit : mm • Description T h e A N 7316 is a m onolithic integrated c ircu it fo r radio cassette recorder and built-in only fu ndam ental function o f R e c ./p la y b a c k p re-am p . w ith A L C fu n c tio n in 2channel 16-lead D IL plastic package.

TIP34C

Abstract: tip34
Contextual Info: TYPES TIP34, TIP34A, TIP34B, TIP34C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS 33 » H mC < D f B rp m FO R P O W E R -A M P L IF IE R A N D H IG H -S P E E D -S W IT C H IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH TIP33, TIP 33A , TIP33B, TIP33C

semikron SKIC

Abstract: pulse transformer driver ic SKIC2001 SKIC2001A FERRITE TRANSFORMER ee semikron skic 20 igbt driver circuit nmos pmos array skic
Contextual Info: se MIKR ün Absolute Maximum Ratings Ta = 25 °C Symbol Term V d d is v V d d 12V VDD5V V IH V IL fsw Top / T stg 15 V supply voltage (SK IC 2001 A) 12 V supply voltage (SK IC 2001 B) 5 V supply voltage (reference for input signals) input signal voltage (H IG H ) max.

OP-07

Abstract: REF-03 SPT7922 amplifier CV 203
Contextual Info: fàSPT SIGNAL PROCESSING TECHNOLOGIES SPT7922 12-BIT, 30 MSPS, TTL, A/D CONVERTER FEATURES APPLICATIONS • • • • • • • • • • • • • • • • Monolithic 12-Bit 30 MSPS Converter 64 dB SNR @ 3.58 MHz Input On-Chip Track/Hold Bipolar ±2.0 V Analog Input

MAX163

Abstract: MAX164 MAX167 MAX167ACNG MAX167ACWG MAX167BCNG MAX167BCWG MAX167CCNG
Contextual Info: >kiyjxi>ki CMOS 12-Bit A /D C onverters With Track-and-Hold _ Features The MAX163, MAX164, and MAX167 are com plete CM O S sam pling 12-bit a n a lo g -to -d ig ita l converters ADC s that co m b in e an o n -ch ip tra ck-a n d -h o ld and

IRFP440

Abstract: RA3A
Contextual Info: PD-9.457C International ï^R Rectifier IRFP440 HEXFET P o w e r M O S F E T • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements 500 V V DSS =

IRF9130 mosfet

Abstract: IRF9130 501 mosfet transistor IRF9132 gate driver for mosfet irf9130 IRF9131 IRF9133 92CS-43394
Contextual Info: Rugged Power MOSFETs File N um ber 2220 IR F9130, IRF9131 IRF9132, IR F9133 Avalanche-Energy-Rated P-Channel Power MOSFETs - 1 0 A Td s a n d o n = - 1 2 A , 0 . 3 0 0 - 6 0 V a n d a n d TERMINAL DIAGRAM - 1 0 0 V 0 . 4 0 0 Features: • Single pulse avalanche energy rated

IRF9640

Abstract: transistor IRF9640 IRF9641 IRF9642 irf9640 mosfet IRF9643 f9640
Contextual Info: Rugged Power MOSFETs File Number IRF9640, IRF9641 IRF9642, IRF9643 2284 Avalanche-Energy-Rated P-Channel Power MOSFETs -9 A and -11 A, -150 V and -200 rosiom = 0.5 Q and 0.7 fi Features: • Single pulse avalanche energy rated m SOA is pow er-dissipation lim ite d

IRF9150

Abstract: IRF9151 IRF150 SCVIRFP9150CF1 MOSFET IRF150
Contextual Info: Rugged Power MOSFETs File Num ber IRF9150, IRF9151 2280 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power Field-Effect Transistors 25 A, 60 V and 100 V P-CHANNEL ENHANCEMENT MODE fDS on = 0 .1 5 0 Q Features: • SOA is pow er-dissipation lim ite d

MOSFET IRF 570

Abstract: IRFBC40R MOSFET IRF 940 6.2a 600v irf IRFBC42R IRF N-Channel Power MOSFETs irf mosfets gj6b 360VX
Contextual Info: . Rugged Power MOSFETs File N u m be r IRFBC40R, IRFBC42R 2157 Avalanche-Energy-Rated N-Channel Power MOSFETs 6 .2A and 5.4A, 600V rbston ~ 1-20 and 1.60 N-CHANNEL ENHANCEMENT MODE Features: • Repetitive Avalanche Ratings m Simple Drive Requirements • Ease o l Paralleling

IRFF9131

Abstract: IRFF9133 IRFF9130 IRFF9132 transistors c 2216
Contextual Info: Rugged Power MOSFETs IRFF9130, IRFF9131 IRFF9132, IRFF9133 F ile N u m b e r 2216 Avalanche-Energy-Rated P-Channel Power MOSFETs -5.5A and -6.5A, -60V and -100V ibs on = 0.30Q and 0.400 TERMINAL DIAGRAM □ Features: • S in g le p u ls e a va la n ch e e n e rg y ra te d

sn 74374

Abstract: SAB82731 sab8273 82731 dot BB505G 16XT1 82730
Contextual Info: S IE M E N S SAB 82731 Dot Rate Generator A complete video interface between CRT controller and CRT display SAB 82731 50 M Hz SAB 82731-2 80 MHz SAB 82731-3 65 MHz • Dot sh ift rates up to 80 MHz SAB82731-2 • Character a ttrib u te processing • Character length up to 16 dots

Contextual Info: B U RR - BROW N ADS831 ^ 8-Bit, 80MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION • HIGH SNR: 49dB The ADS831 is a pipeline, CMOS analog-to-digital con­ verter that operates from a single +5V power supply. This converter provides excellent performance with a single­

Contextual Info: Data Sheet No. PD 6.069-G International I R Rectifier IRSF3031 FULLY PROTECTED POWER MOSFET SWITCH Features • Product Summary C ontrolled S le w R a te R e d u c e s E M I • O v e r T e m p e ra tu re Protection • O v e r C u rren t Protection • A ctive D rain -to -S o u rc e C la m p

SmD TRANSISTOR a77

Abstract: vienna rectifier ixys dsei 2x30-06c P6139 IXTN 36N50 C p6139a 36N50 2x30-06c IXYS VUM25-E PFC 2.5kw
Contextual Info: D e s ig n a n d E x p e r im e n ta l I n v e s tig a tio n o f a T h r e e - P h a s e H ig h P o w e r D e n s it y H ig h E ffic ie n c y U n it y P o w e r F a c to r P W M V I E N N A R e c tifie r E m p lo y in g a N o v e l I n te g r a te d P o w e r S e m ic o n d u c to r M o d u le

Contextual Info: >kiyjxi>ki CMOS 12-Bit A /D Converters With Ttack-and-Hold _ Features The MAX163, MAX164, and MAX167 are com plete CM O S sam pling 12-bit a n a lo g -to -d ig ita l converters ADC s that co m b in e an o n -ch ip tra ck-a n d -h o ld and

L64706

Abstract: receiver qpsk schematic diagram BPSK demodulator A/M29F010B(45/70/90/MT352/CG/NEC LSI QPSK
Contextual Info: L64706 Variable Rate QPSK/BPSK Demodulator Preliminary Specification L64706.TAR.3 Draft 5/19/95 Draft 5/19/95 This document is preliminary. As such, it contains data derived from functional simulations and performance estimates. LSI Logic has not verified either the

str 6556

Abstract: str w 6556 str x 6556 str w 6556 equivalent encoder sew oms 450 xt 12 mhz hlx hlx crystal bma 023 jl-013
Contextual Info: Preliminary Am7968/Am7969-175 Advanced Micro Devices TAXIchip Integrated Circuits D IS T IN C T IV E C H A R A C T E R IS T IC S • Parallel TTL bus interface - Eight Data and four Command Pins - or nine Data and three Command Pins - or ten Data and two Command Pins

Contextual Info: h a r S E M I C O N D U C T O R FSS130D, FSS130R " Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 11 A, 100V, rDS ON = 0.210£i TO-257AA • Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) • Single Event

GC20930

Abstract: 6v dc motor IG 2200 19
Contextual Info: SGS-THOMSON STP25N06 STP25N06FI IM N - CHANNEL EN H A N C EM EN T M ODE PO W ER M OS TR A N SISTO R TYPE STP25N06 STP25N06FI . . . . . . V dss RDSfon 60 V 60 V 0.07 0.07 Id a il 25 A 16 A AVALANCHE RUG G EDN ESS TEC HNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C

Contextual Info: SGS-THOMSON STP3N90 STP3N90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N90 STP3N90FI Vdss FtDS on Id 900 V 900 V 4.5 £2 4.5 a 3.2 A 1.9 A . . . . . • AVALANCHE RUG G EDNESS TECHNOLO GY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

RFP12N06RLE

Abstract: AN7254 RFD12N06RLE RFD12N06RLESM 12a60v 12A60 FD250
Contextual Info: m HARRIS RFD12N06RLE, RFD12N06RLESM RFP12N06RLE U L * January1994 N-Channel Logic Level Enhancement-Mode Power Field-Effect Transistors MegaFETs Packages Features RFD12N06RLE (TO-251) TOP VIEW • 12A.60V • rDS(on) = 0-135il • Electrostatic Discharge Rated

irf*234 n

Abstract: IRF235 sm 4205 IRF234d GE-X8
Contextual Info: IRF234, IRF235 IRF236, IRF237 21 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated May 1992 Package Features T O -2 0 4 A A • 8.1A and 6.5A, 275V - 250V B O T T O M VIEW • rD S °n = 0 -4 5 0 and 0 .6 8 ÎÎ • Single Pulse Avalanche Energy Rated