HAT1025R Search Results

HAT1025R

Abstract: HAT1025R-EL-E
Contextual Info: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching REJ03G1147-1000 Previous: ADE-208-437H Rev.10.00 Sep 07, 2005 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline RENESAS Package code: PRSP0008DD-D

1025R

Contextual Info: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-437 G 8th. Edition Features • Low on-resistance • Capable o f 2.5 V gate drive • Low drive current • High density mounting Outline S O P -8 7 8 D D 5 6 OD o o QJ ô

Hitachi DSA002752

Contextual Info: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-437 H Z 9th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4

Hitachi DSA00276

Contextual Info: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-437H Z 9th. Edition Feb. 1992 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4 5 6 D D

Contextual Info: HAT1025R Target Specification Silicon P Channel Power MOS FET HITACHI Application 2nd. Edition May. 1 995 Preliminary S O P -8 High speed power switching 8 7 6 5 Features • • • • V 1 23 Low on—resistance Capable of 2.5V gate drive Low drive current

Contextual Info: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP- 8 4 7 8 D D 5 6 D D Î-Î Î-Î ó S1 MOS1 ó s3 MOS2 1.3

HAT1025R

Abstract: MS-012AA
Contextual Info: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-437 H Z 9th. Edition February 1999 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4

Hitachi DSA001650

Contextual Info: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-437 F Z 7th. Edition December. 1996 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4

HAT1025R

Abstract: MS-012AA Hitachi DSA0073
Contextual Info: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-437 F Z 7th. Edition December. 1996 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4

Hitachi DSA002751

Contextual Info: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-437 G Z 8th. Edition June 1, 1997 Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4 5 6

Hitachi DSA002779

Abstract: hat1025r
Contextual Info: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-437 G 8th. Edition Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline HAT1025R Absolute Maximum Ratings Ta = 25°C

H8/3048F

Abstract: H8 hitachi programming manual EVB3048F HAT1025R LL103C Hitachi DSA00197
Contextual Info: Hitachi Europe Ltd. ISSUE APPLICATION NOTE : APPS/076/1.0 DATE : xx/xx/xx Using the flash memory of the H8/3048F as EEPROM replacement The flash memory of the H8/3048F can be used to store both program and data. When updating a program inside the H8/3048F the new update program will be downloaded into

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

TO220CFM

Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
Contextual Info: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

HAT2005F

Abstract: HAT1001F
Contextual Info: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SJ408 L 2SJ505(L) 2SJ408(S) 2SJ505(S) HAT1001F

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

HAT1025R

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

HAT1025R

Abstract: HAT1025R-EL-E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid