GT20G1 Search Results
GT20G1 Datasheets (17)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| GT20G101 |
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TRANS IGBT CHIP N-CH 400V 20A 3(2-10S1C) | Original | 182.07KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT20G101 |
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INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Original | 287.22KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT20G101 |
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Discrete IGBTs | Original | 586.27KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT20G101 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 88.73KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT20G101 | Unknown | Catalog Scans - Shortform Datasheet | Scan | 53.63KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT20G101(SM) |
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N-Channel IGBT | Original | 284.88KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT20G101SM |
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IGBT | Original | 284.9KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT20G101SM | Unknown | Catalog Scans - Shortform Datasheet | Scan | 53.63KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT20G101(SM) |
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TRANS IGBT CHIP N-CH 400V 20A 3(2-10S2C) | Scan | 180.3KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT20G101SM |
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N CHANNEL IGBT (STROBE FLASH APPLICATIONS) | Scan | 180.3KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT20G102 |
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INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT | Original | 281.83KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT20G102 |
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Discrete IGBTs | Original | 586.27KB | 15 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT20G102 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 88.73KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT20G102(SM) |
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N-channel iso-gate bipolar transistor (MOS technology) | Original | 197.25KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT20G102(SM) |
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N-Channel IGBT | Original | 282.39KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT20G102SM |
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IGBT | Original | 282.4KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| GT20G102SM |
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N CHANNEL IGBT (STROBE FLASH APPLICATIONS) | Scan | 182.21KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
GT20G1 Price and Stock
Toshiba America Electronic Components GT20G101Trans IGBT Chip N-CH 400V 20A 1.3W 3-Pin(2+Tab) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GT20G101 | 41 |
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Get Quote | |||||||
GT20G1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: TOSHIBA GT2QG102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N-CHANNEL IGBT GT20G102(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance « Low Saturation Voltage : V q e (sa t) = 8V (Max.) (l£ = 130A) • Enhancement-Mode • |
OCR Scan |
gt2qg102gt20g1022-10s2c | |
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Contextual Info: TOSHIBA GT20G102 TOSHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 2 0 G 1 02 U nit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V c E say = 8V (Max. (Ic = 130A) Enhancement-M ode 12V Gate Drive |
OCR Scan |
gt20g102 | |
GT20G101Contextual Info: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C) |
Original |
gt20g1012-10s2c | |
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Contextual Info: TOSHIBA GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 Unit in mm STROBE FLASH APPLICATIONS • • • • 10.3 MAX High Input Impedance Low Saturation Voltage : V0g s a t ~ 8 V (Max.) (Iq = 130A) Enhancement-Mode |
OCR Scan |
gt20g101tcs70 | |
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Contextual Info: GT20G101 SM T O S H IB A GT 2 0 G1 01 ( SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V0g (s a t)~ 8 V (Max.) (Iq = 130A) Enhancement-Mode 20V Gate Drive |
OCR Scan |
gt20g101 | |
GT20G101Contextual Info: GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 130A) l Enhancement−Mode l 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C) |
Original |
gt20g1012-10s1c | |
cs7eContextual Info: TOSHIBA GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T2 0 G 10 2(S M) STROBE FLASH APPLICATIONS U nit in mm • High Input Impedance • Low Saturation Voltage : V(j e (5at) = 8V (Max.) (Iq = 130A) • Enhancement-Mode • |
OCR Scan |
gt20g1022-10s2ccs7e | |
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Contextual Info: GT20G10KSM TOSHIBA TO SH IBA IN SULATED GATE BIPOLAR TRAN SISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 01 S M ) Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : V cE (sat) = 8V (Max.) (Ic = 130A) Enhancement-Mode |
OCR Scan |
gt20g10ksm2-10s2c | |
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Contextual Info: SILICON N CHANNEL MOS TYPE GT20G10KSM — STROBE FLASH APPLICATIONS Unit in mn 1Q.3MAX . High Input Impedance 5.0 . Low Saturation Voltage : VcE sat)=8V(Max.)(Ic=130A) . Enhancement-Mode 0.1 . 20V Gate Drive - r ¥JlHL y 2.54± 0.25 2 54±0.25 HAXIMUM RATINGS (Ta=25°C) |
OCR Scan |
gt20g10ksm | |
1200cuContextual Info: GT20G102 SILICON N CHANNEL MOS TYPE STROBE FLASH APPLICATIONS Unit in nn 1 .32 . High Input Impedance . Low Saturation Voltage : VcE sat = 8V(Max.)(Ic=130A) . Enhancement-Mode . 12V Gate Drive MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING Collector-Emitter Voltage |
OCR Scan |
gt20g1021200cu | |
GT20
Abstract: GT20G101
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OCR Scan |
gt20g1012-10s2cgt20 | |
GT20G101Contextual Info: GT20G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C) |
Original |
gt20g1012-10s1c | |
igbt flash
Abstract: GT20G102
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Original |
gt20g1022-10s1cigbt flash | |
LE20AContextual Info: GT20G102 SM T O S H IB A T O S H IB A IN SU LATED G ATE B IP O LA R TRA N SISTO R SILICON N-CHANNEL IG BT GT20G102(S M) STR O BE FLASH A PPLIC A TIO N S • • • • H igh Input Im pedance Low Saturation V oltage Enhancem ent-M ode 12V Gate Drive : V C E (sat) = 8V (Max.) (IC = 130A) |
OCR Scan |
gt20g102gt20g102-10s2cle20a | |
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Contextual Info: GT20G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20G102 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE sat = 8.0V (Max.) (IC = 130A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C) |
Original |
gt20g10210s1c | |
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Contextual Info: GT20G102 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT fi T ? n fi 1 n i Unit in mm STROBE FLASH APPLICATIONS 10.3MAX • • • • High Input Impedance Low Saturation Voltage : V j e (5at = 8V (Max.) (Iq = 130A) Enhancement-Mode |
OCR Scan |
gt20g1022-10s1c | |
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Contextual Info: GT20G101 SILICON N CHANNEL MOS TYPE STROBE FLASH APPLICATIONS Unit in mm 10.3MAX . High Input Impedance - Low Saturation Voltage : VcE sat =8V(Itax. ) (Ic=130A) . Enhancement-Mode . 20V Gate Drive 1.6 MAX 0.76 MAXIMUM RATINGS (Ta-25°C) SYMBOL CHARACTERISTIC |
OCR Scan |
gt20g101ta-25 | |
G50Q2YS40
Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
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OCR Scan |
gt10g101gt10j301gt10j311gt10q301+15 | |
GT20G102Contextual Info: GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G102(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C) |
Original |
gt20g1022-10s2c | |
vqe 24 d
Abstract: GT20G102 vqe 208 e
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OCR Scan |
gt20g102vqe 24 dvqe 208 e | |
AFC5Contextual Info: GT20G101 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT riT ?n riim Unit in mm STROBE FLASH APPLICATIONS 10.3MAX • • • • 1.32 5.0 High Input Impedance Low Saturation Voltage : Vq e sat = ^V (Max.) (Iq = 130A) Enhancement-Mode |
OCR Scan |
gt20g101afc5 | |
GT20G102Contextual Info: GT20G102 SM TO SHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 2 0 G 1 0 2 ( S M) Unit in mm STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage : VCE(sat) = 8V (Max.) (IC = 130A) Enhancement-Mode |
OCR Scan |
gt20g102gt20g10 | |
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Contextual Info: GT20G102 SM T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT20G1 0 2(S M) STROBE FLASH APPLICATIONS • • • • High Input Impedance Low Saturation Voltage Enhancement-Mode 12V Gate Drive : VC E (Sat) = 8V (Max.) (IC = 130A) |
OCR Scan |
gt20g102gt20g1 | |
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Contextual Info: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) l Enhancement−Mode l 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C) |
Original |
gt20g10110s2c | |