10S2C Search Results

AMK107BJ106MA

Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C08 RoHS compliance product ○AMK107BJ106MA 1000 Capacitance[uF] . 4V 1608 X5R 10uF +/-20% t=0.9mmMAX 4V 0603 X5R 10uF +/-20% t=0.035inchMAX AMK107BJ106MA Capacitance Freq. 100 10 1 0.001

AWK107C6475MV

Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C09 RoHS compliance product ○AWK107C6475MV 4V 0816 X6S 4.7uF +/-20% t=0.55mmMAX 4V 0306 X6S 4.7uF +/-20% t=0.022inchMAX AWK107C6475MV DC Bias Char. 20 AWK107C6475MV Capacitance Freq. 1000

AMK105BJ335MV

Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C08O RoHS compliance product ○AMK105BJ335MV 4V 1005 X5R 3.3uF +/-20% t=0.55mmMAX 4V 0402 X5R 3.3uF +/-20% t=0.022inchMAX AMK105BJ335MV DC Bias Char. 20 AMK105BJ335MV Capacitance Freq. 1000

AMK063BJ474MP

Abstract: ceramic capacitor 0201 1 uf
Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C08O RoHS compliance product ○AMK063BJ474MP 4V 0603 X5R 0.47uF +/-20% t=0.33mmMAX 4V 0201 X5R 0.47uF +/-20% t=0.013inchMAX AMK063BJ474MP DC Bias Char. 20 AMK063BJ474MP Capacitance Freq.

AMK063BJ224MP

Abstract: ceramic capacitor 0201 1 uf
Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C08 RoHS compliance product ○AMK063BJ224MP 4V 0603 X5R 0.22uF +/-20% t=0.33mmMAX 4V 0201 X5R 0.22uF +/-20% t=0.013inchMAX AMK063BJ224MP DC Bias Char. 20 AMK063BJ224MP Capacitance Freq. 100

JWK105BJ105MP

Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C09O RoHS compliance product ○JWK105BJ105MP 6.3V 0510 X5R 1uF +/-20% t=0.35mmMAX 6.3V 0204 X5R 1uF +/-20% t=0.014inchMAX JWK105BJ105MP DC Bias Char. 20 JWK105BJ105MP Capacitance Freq. 1000

AWK105C6105MP

Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C09O RoHS compliance product ○AWK105C6105MP 4V 0510 X6S 1uF +/-20% t=0.35mmMAX 4V 0204 X6S 1uF +/-20% t=0.014inchMAX AWK105C6105MP Capacitance Freq. AWK105C6105MP DC Bias Char. 20 1000 10

JWK107BJ475MV

Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C09 RoHS compliance product ○JWK107BJ475MV 6.3V 0816 X5R 4.7uF +/-20% t=0.55mmMAX 6.3V 0306 X5R 4.7uF +/-20% t=0.022inchMAX JWK107BJ475MV DC Bias Char. 20 JWK107BJ475MV Capacitance Freq.

AMK105ABJ475MV

Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C08O RoHS compliance product ○AMK105ABJ475MV 4V 1005 X5R 4.7uF +/-20% t=0.6mmMAX 4V 0402 X5R 4.7uF +/-20% t=0.024inchMAX AMK105ABJ475MV DC Bias Char. 20 AMK105ABJ475MV Capacitance Freq.

AMK063BJ334MP

Abstract: ceramic capacitor 0201 1 uf ceramic capacitor 0.33UF
Contextual Info: Multi Layer Ceramic Capacitor -Electrical Characteristics Data- 10S2C08 RoHS compliance product ○AMK063BJ334MP 4V 0603 X5R 0.33uF +/-20% t=0.33mmMAX 4V 0201 X5R 0.33uF +/-20% t=0.013inchMAX AMK063BJ334MP DC Bias Char. 20 AMK063BJ334MP Capacitance Freq. 100

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

GT20G101

Contextual Info: GT20G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

fci dh 22

Abstract: JSA93382 HLW25R-2C7LF 6R2C HLW22R-2C7LF HLW31R-2C7LF JSA93626 HLW23S-2C7 1J23 HLW11S-2C7LF
Contextual Info: REVISIONS D E S C R IP T IO N REV A ECN BY D A TE J05-027 0 H.T 5/10/'05 RFI .EA SED CAT. NO. & DIMENSIONS ND. DF CONTACTS n DIMENSIONS (NOTED CAT. ND. RIGHT ANGLE TYPE A 1 0.3 STRAIGHT TYPE B C 4 HLW 4R-2C7LF HLW 4S-2C7LF 6.6 5.12 5 HLW 5R-2C7LF HLW 5S-2C7LF

GT5J311

Contextual Info: GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J311,GT5J311(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.30µs (Max.) (IC = 5A)

TRANSISTOR S2A

Abstract: TO220SM 10D2A
Contextual Info: Transistor Outline Package Surface Mount Type TO-220SM パッケージ 外形図 パッケージ形状および寸法 単位 : mm 1.32 0.76 2 参考パッド寸法 0.6 10.6 max 0.1 1 3 2 1 (Bottom view) 0.5 4.7 max 2.54 ±0.25 2.6 2.54 ±0.25 3.0 ±0.2

Contextual Info: GT5J311,GT5J311 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT TENTATIVE GT5J311,GT5J311(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) (IC = 5A)

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

10j312

Abstract: GENERAL SEMICONDUCTOR MARKING SM
Contextual Info: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs (Max.)

GT10J312

Contextual Info: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312,GT10J312(SM) Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs (Max.) Low Saturation Voltage

TRANSISTOR S2A

Abstract: 2S2A s2a mosfet TRANSISTOR Y 330 TE24L s2a transistor 10D2A 12D2A
Contextual Info: Transistor Outline Package Surface Mount Type TO-220SM パッケージ エンボス方式テーピング寸法 (TE24L) テープ形状および寸法 単位 : mm 12.0 ±0.1 φ1.5 +0.1 –0.0 Y 4.0 ±0.1 1.75 ±0.1 2.0 ±0.1 0.4 ±0.05 13.9 φ2.0 ±0.1 24.0 ±0.3

gt25g101

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) Enhancement−Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

GT25G101

Contextual Info: GT25G101 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS z High Input Impedance z Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 170A) z Enhancement−Mode z 12V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

GT20G102

Contextual Info: GT20G102 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT20G102(SM) Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE (sat) = 8V (Max.) (IC = 130A) l Enhancement−Mode l 12V Gate Drive MAXIMUM RATINGS (Ta = 25°C)

10j312

Abstract: GT10J312 marking code SM diode
Contextual Info: GT10J312,GT10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J312, GT10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs (Max.)