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    GT10J312 Price and Stock

    Toshiba America Electronic Components GT10J312(Q)

    IGBT 600V 10A 60W TO220SM
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    DigiKey GT10J312(Q) Tube
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    Toshiba America Electronic Components GT10J312

    SILICON N CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel
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    ComSIT USA GT10J312 100
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    GT10J312 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    GT10J312 Toshiba Insulated Gate Bipolar Transistor Silicon N-Channel IGBT Original PDF
    GT10J312 Toshiba Original PDF
    GT10J312 Toshiba Discrete IGBTs Original PDF
    GT10J312 Toshiba Discrete IGBTs Original PDF
    GT10J312 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    GT10J312(Q) Toshiba IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 10A 60W TO220SM Original PDF
    GT10J312(SM) Toshiba Original PDF
    GT10J312SM Toshiba SILICON N CHANNEL IGBT Original PDF
    GT10J312(SM) Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF