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    Toshiba America Electronic Components

    Toshiba America Electronic Components GT10J312

    SILICON N CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel
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    10J312 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    10j312

    Abstract: GENERAL SEMICONDUCTOR MARKING SM
    Contextual Info: 10J312,10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 10J312, 10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs (Max.)


    Original     		gt10j31210j312general semiconductor marking sm PDF

    10j312

    Abstract: GT10J312 marking code SM diode
    Contextual Info: 10J312,10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 10J312, 10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs (Max.)


    Original     		gt10j31210j312marking code sm diode PDF

    10j312

    Abstract: GT10J312 transistor sm GT10J312SM
    Contextual Info: 10J312,10J312 SM TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT 10J312, 10J312(SM) HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30 s (Max.)


    Original     		gt10j31210j312transistor smgt10j312sm PDF