FX35V Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FX35V0510 1 0 .5 — 1 1.0GHz BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 5 V 0 5 1 0 is an internally impedance matched GaAs power F E T especially designed fo r use in 10.5 ~ 11.0 G H z band amplifiers. The herm etically sealed metal-ceramic

Contextual Info: bEHTBST □Dl601fi fi3D • MITSUBISHI SEMICONDUCTOR <GaAs FET> M FX35V0005 1 0 .0 — 10.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G FX35V 0005 is an internally impedance matched GaAs power FET especially designed for use in 10.0 ~ 10.5

Contextual Info: b 5 4 cìfia ì O D l ô O l b Tbfi • MITSUBISHI SEMICONDUCTOR <GaAs FET> M FX35V9500 9.5~ 10.0G Hz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G FX35V 9500 is an internally impedance matched GaAs power FET especially designed for use in 9.5 ~ 10.0

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FX35V0005 1 0 .0 — 10.5G H z BAND 3 W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G FX 35V 0005 is an internally impedance matched GaAs power FET especially designed for use in 10.0 ~ 10.5 GHz band amplifiers. The hermetically sealed metal-ceramic

MGF1200

Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

mgfx35v0510

Abstract: FX35V0510-51 MGFX35V0005
Contextual Info: ^M ITSUBISHI FX35VXXXX Packaged ELECTRONIC DEVICE GROUP DESCRIPTION • Internally matched to 50Q • High output power PldB = 3.5W (TYP) This family of devices use high performance source island via-hole GaAs die which offer excellent electrical and thermal resistance

X35V

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F X 35V 1 7 2 2 11.7 ~ 12.2GHz BAND 3W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F X 3 5 V 1 7 2 2 is an internally impedance matched GaAs power F E T especially designed fo r use in 11.7 ~ 12.2