FX35V0510 Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FX35V0510 1 0 .5 — 1 1.0GHz BAND 3 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F X 3 5 V 0 5 1 0 is an internally impedance matched GaAs power F E T especially designed fo r use in 10.5 ~ 11.0 G H z band amplifiers. The herm etically sealed metal-ceramic

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

mgfx35v0510

Abstract: FX35V0510-51 MGFX35V0005
Contextual Info: ^M ITSUBISHI MGFX35VXXXX Packaged ELECTRONIC DEVICE GROUP DESCRIPTION • Internally matched to 50Q • High output power PldB = 3.5W (TYP) This family of devices use high performance source island via-hole GaAs die which offer excellent electrical and thermal resistance