FC36V Search Results

FET TH 469

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET M G FC36V3742A ai ThrS i>ä art S~b' 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The FC36V3742A is an internally impedance-matched Unit : millimeters (inches) GaAs power FET especially designed for use in 3.7~4.2GHz

mgfc30

Abstract: MGFC39V5964A
Contextual Info: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi FC36V3742 3 .7 -4 .2 IMG FC36V3742A M FC36V4460 FC36V4460A MGFC38VS258 FC36V6964 M G FC36V6964A FC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10

7785A

Abstract: FC36V
Contextual Info: S/C BAND INTERNALLY MATCHED GaAs FET MGFSxxVxxxx MGFCxxVxxxxx Series T y p ic a l C ha ra cte ris tics -Kreq. Type M Q F S 4 4 V 2 5 2 7 * M G F S 45V 2527 «+ M G FC36V 3742A * * M FC36V52S8 M G FC36V59M A* * M G FC 36V 6472A * * M G FC 36V 7177A * M G FC36V 7785A * *

MGFC36V7177A

Abstract: fet 30 f 124
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MG FC36V7177 A « 8fnel f 7.1 -7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The FC36V7177A is an internally impedance-matched Unit : millimeters (inches) GaAs power FET especially designed for use in 7.1~7.7GHz

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MG FC36V7785A 7.7-8.5GHZ BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The FC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7~8.5GHz band amplifiers. The hermetically

cd 124

Abstract: UZ40
Contextual Info: MITSUBISHI SEMICONDUCTOR <,GaAs FET> MG FC36V5964A 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 36V5964A is an internally OUTLINE DRAWING impedance-matched GaAs power FET especially designed fo r use in 5.9 ~ 6.4G H z band am plifiers. The

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MG FC36V6472A 6.4~7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET P DESCRIPTION The FC36V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4~7.2GHz band amplifiers. The hermetically sealed

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET MG FC36V3742A P R 0 -* 3.7-4.2G HZ BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The FC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7—4.2GHz band amplifiers. The hermetically

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FC36V5964A P R E L » 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The FC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The

MGF2430A

Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FC36V6472A c " 6 .4 ~ 7 .2 G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The FC36V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4~7.2GHz band am plifiers . The hermetically

dssc

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET> FC36V7177A 7.1-7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The FC36V7177A is an internally impedance-matched GaAs power FET especially designed fo r use in 7.1 —'7.7GHz band am plifiers. The hermetically

FC36V

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> p to d u c « o n p l a n M G F C 3 6 V 6 4 7 1 e d is c o r d 0 6 .4 —7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F C 3 6 V 6 4 7 1 U nit: millimeters inches is an internally impedance-matched

F20i

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> l oX p\an M FC36V7785 p r o d u c t'0 *1 J discontinue 7 .7 —8.5G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 6 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.7 ~ 8 .5

GSO 69

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FC36V6472A 6.4~7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION 21.0 ±0.3(0.827 ±0.012) GaAs power FET especially designed for use in 6.4~7.2GHz band amplifiers. The hermetically sealed Unit : millimeters (inches)

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET FC36V4450A 4.4-5 .OGHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The FC36V4450A is an internally impedance-matched U n it: millimeters inches) GaAs power FET especially designed for use in 4.4~5.0GHz

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET FC36V7785A , eh«*» ¡ptev^ 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET 5«n>e p3r3' DESCRIPTION The M G FC 36V7785A is an internally impedance-matched GaAs power FET especially designed fo r use in 7.7 ~ 8.5G H z

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET FC36V4450A 4.4-5.0GHZ BAND 4W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N GaAs power FET especially designed for use in 4.4~5.0GHz band amplifiers. The hermetically sealed U n it: millimeters (inches) O U T L IN E D R A W IN G