FC39V Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC39V37 4 2 A 3 .7 —4.2G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION T h e M G F C 3 9 V 3 7 4 2 A is a n in te m a lly im p e d a n c e -m a tc h e d G aA s p o w e r F E T especially designed fo r use in 3 .7 ~ 4 .2

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC39V7177A • tftwW gxs Wifi Si>n'K 7 .1 — 7.7GHz BAND 8W INTERNALLY M ATCH ED GaAs F E T DESCRIPTION The FC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7 .1 —7.7 GHz band amplifiers* The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M FC39V5258 5 . 2 —5 .8 G H z BAND 8 W INTERNA LLY MATCHED GaAs FET DESCRIPTION The M G FC39V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 ~ 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC39V5258 5 . 2 —5.8G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION T he M G F C 3 9 V 5 2 5 8 is an intern ally impedance-matched GaAs pow er F E T especially designed fo r use in 5 .2 ~ 5 .8 G H z band am plifiers. T h e h erm etically sealed m etal-ceram ic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39 V 7785A e h « "* r\f! No««* " ' ”mew clW s=^<>8ton’ 7 .7 — 8 .5 G H z BAND 8 W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 3 9 V 7 7 8 5 A is a n in te rn a lly im p e d a n c e -m a t c h e d

5527G

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V 7785 7 .7 —8 .5G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7.7 ~ 8,5 G H z band amplifiers. The herm etically sealed metal-ceramic

MGF2430A

Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

mgfc30

Abstract: MGFC39V5964A
Contextual Info: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10

7785A

Abstract: FC36V
Contextual Info: S/C BAND INTERNALLY MATCHED GaAs FET MGFSxxVxxxx MGFCxxVxxxxx Series T y p ic a l C ha ra cte ris tics -Kreq. Type M Q F S 4 4 V 2 5 2 7 * M G F S 45V 2527 «+ M G FC36V 3742A * * M GFC36V52S8 M G FC36V59M A* * M G FC 36V 6472A * * M G FC 36V 7177A * M G FC36V 7785A * *

mgfc39v5964

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M FC39V5964 6 .4 G H z BAND 8W IN T E R N A L L Y M A TCH ED GaAs F E T DESCRIPTION The FC39V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

GFC39V6471

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M FC39V6471 s s s * “ " " 6 .4 —7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The FC39V6471 is an internally impedance-matched GaAs power F E T especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 3 9 V 5 2 5 8 5 .2 — 5 .8 G H z B AN D 8 W IN T E R N A L L Y M A TC H ED GaAs F E T DESCRIPTION OUTLINE DRAWING The M G F C 39V 5 25 8 is an in te rn a lly impedance-matched •Unii m illim eters niches GaAs pow er FET especially designed fo r use in 5.2 ~ 5.8

MGFC39V7177A

Abstract: MGFC39V7177
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FC39V7177A p ftE U ' . N o t,t .» n n ß . . "XVi'S's T il<5 » n o t ï f ï ,ts 8f s c 7 .1 — 7 .7 G H z BAND 8 W INTERNA LLY M ATCHED GaAs FET .-,.a O 'e t ! , c DESCRIPTION T h e M G F C 3 9 V 7 1 7 7 A is a n internally im p e d a n c e -m a tc h e d

IM324

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M FC39VS964A 5 .9 6.4G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The FC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5 .9 —6.4 GHz band amplifiers. The hermetically sealed metal ceramic