FC39V7177A Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC39V7177A • tftwW gxs Wifi Si>n'K 7 .1 — 7.7GHz BAND 8W INTERNALLY M ATCH ED GaAs F E T DESCRIPTION The FC39V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7 .1 —7.7 GHz band amplifiers* The hermetically sealed metal-ceramic

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

MGFC39V7177A

Abstract: MGFC39V7177
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> FC39V7177A p ftE U ' . N o t,t .» n n ß . . "XVi'S's T il<5 » n o t ï f ï ,ts 8f s c 7 .1 — 7 .7 G H z BAND 8 W INTERNA LLY M ATCHED GaAs FET .-,.a O 'e t ! , c DESCRIPTION T h e M G F C 3 9 V 7 1 7 7 A is a n internally im p e d a n c e -m a tc h e d