GFC39V Search Results

MGFC39V5964A

Abstract: pj 59
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964A fin » cn 5 .9 ~ 6 .4 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION T he M G F C 3 9 V 5 9 6 4 A is an internally im p e d a n c e -m a tc h e d GaAs power F E T especially designed fo r use in 5 . 9 — 6 . 4

aeg t 133

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V7177A | 7 .1 — 7 .7 6 H z BAND 8 W INTERNALLY MATCHED GaAs FET j DESCRIPTION T h e M G F C 3 9 V 7 1 7 7 A is an in te rn a lly im p e d a n c e -m a tc h e d GaAs p o w e r F E T especially designed fo r use in 7 . 1 — 7 .7

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964A 5 . 9 —6.4G H z BAND 8 W INTERNALLY MATCHED GaAs FET •>rnC V DESCRIPTION The M G FC 3 9 V 5 9 6 4 A is an internally impedance-matched GaAs power F E T especially designed for use in 5.9 —6 .4 GHz band amplifiers. The hermetically sealed metal ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964A So«1' Q 5 .9 ~ 6 .4 G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 9 V 5 9 6 4 A is an internally im pedance-matched GaAs power F E T especially designed for use in 5 .9 —6 .4 GHz band amplifiers. The hermetically sealed metal-ceramic

mgfc39v5964

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5964 6 .4 G H z BAND 8W IN T E R N A L L Y M A TCH ED GaAs F E T DESCRIPTION The GFC39V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

GFC39V6471

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V6471 s s s * “ " " 6 .4 —7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The GFC39V6471 is an internally impedance-matched GaAs power F E T especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V 4450 fo r p ro d u c t'0 0 d \s c o n t^ 4 .4 ~ 5.0GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The M GFC39V4450 is an internally impedance-matched GaAs power F E T especially designed for use in 4.4 ~ 5.0

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V5258 5 . 2 —5 .8 G H z BAND 8 W INTERNA LLY MATCHED GaAs FET DESCRIPTION The M G FC39V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 ~ 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> U M „orice- M GFC39V4450A * * * * *«« i! 4 . 4 —5 .0 G H z BAND 8 W INTERNA LLY M ATCHED GaAs FE T DESCRIPTION OUTLINE DRAWING T h e M G F C 3 9 V 4 4 5 0 A is an internally im p e d a n c e -m a tc h e d Unit millimeters linches

GFC39V5964

Abstract: mgfc39v5964
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> plan *oK p.oduc^ M GFC39V5964 S .9 —6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The GFC39V5964 is an internally impedance-matched GaAs power F E T especially designed for use in 5.9 ~ 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic

IM324

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39VS964A 5 .9 6.4G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION The GFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5 .9 —6.4 GHz band amplifiers. The hermetically sealed metal ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V6472 A P K W - ' " ' — J ï ï ï .- '’ ^ ^.r.vr.u -V -s i"p • ’’ ' 6 . 4 - 7.2GHz BAND 8 W INTERNALLY M ATCHED GaAs FE T DESCRIPTION The M G F C 3 9 V 6 4 7 2 A is an in te rn a lly im p eda nce -m atche d

MGF2430A

Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E

mgfc30

Abstract: MGFC39V5964A
Contextual Info: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10

7785A

Abstract: FC36V
Contextual Info: S/C BAND INTERNALLY MATCHED GaAs FET MGFSxxVxxxx MGFCxxVxxxxx Series T y p ic a l C ha ra cte ris tics -Kreq. Type M Q F S 4 4 V 2 5 2 7 * M G F S 45V 2527 «+ M G FC36V 3742A * * M GFC36V52S8 M G FC36V59M A* * M G FC 36V 6472A * * M G FC 36V 7177A * M G FC36V 7785A * *

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M 6FC39V 7177 7.1~ 7.7GH z BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The GFC39V7177 is an internally impedance-matched GaAs power F E T especially designed for use in 7.1 ~ 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFC39V3742A

Contextual Info: p R Ö - ' MITSUBISHI SEMICONDUCTOR <GaAs FET> r/\\N f&y .r: — • n r ^ M G FC 39V 3742A wnge- go«'« 9 3 . 7 —4 .2 G H z BAND 8 W INTERNALLY M ATCHED GaAs FE T DESCRIPTION The M G FC 3 9 V 3 7 4 2 A ¡san internally impedance-matched GaAs power F E T especially designed for use in 3.7 ~ 4.2

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 3 9 V4 4 5 0 A 4 .4 — 5 .0 G H z BAN D 8 W IN T E R N A L L Y M A TC H ED GaAs F E T DESCRIPTION The GFC39V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic