GFC39V6472 Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC39V6472 A P K W - ' " ' — J ï ï ï .- '’ ^ ^.r.vr.u -V -s i"p • ’’ ' 6 . 4 - 7.2GHz BAND 8 W INTERNALLY M ATCHED GaAs FE T DESCRIPTION The M G F C 3 9 V 6 4 7 2 A is an in te rn a lly im p eda nce -m atche d

MGF2430A

Abstract: MGF4714AP MGF4914D MGF4919 MGF1402B MGF2430 MGF1923 7.1 power amplifier circuit diagram block diagram of power factor meter mgf2445
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> APPLICATION NOTE RECOMMENDED LINE-UP FOR LOW NOISE DEVICES APPLICATION NOTE 1. Recommended Line-Up 1.1 Line-up for 12G Hz Band Converter W G - M IC CO NVERTER RF AM P 1ST STAGE M IX E R 2N D S T A G E IF A M P 3R D S T A G E

mgfc30

Abstract: MGFC39V5964A
Contextual Info: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10