FC39V5258 Search Results

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M FC39V5258 5 . 2 —5 .8 G H z BAND 8 W INTERNA LLY MATCHED GaAs FET DESCRIPTION The M G FC39V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 ~ 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC39V5258 5 . 2 —5.8G H z BAND 8 W INTERNALLY MATCHED GaAs FET DESCRIPTION T he M G F C 3 9 V 5 2 5 8 is an intern ally impedance-matched GaAs pow er F E T especially designed fo r use in 5 .2 ~ 5 .8 G H z band am plifiers. T h e h erm etically sealed m etal-ceram ic

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 3 9 V 5 2 5 8 5 .2 — 5 .8 G H z B AN D 8 W IN T E R N A L L Y M A TC H ED GaAs F E T DESCRIPTION OUTLINE DRAWING The M G F C 39V 5 25 8 is an in te rn a lly impedance-matched •Unii m illim eters niches GaAs pow er FET especially designed fo r use in 5.2 ~ 5.8