MGFC36V3742 Search Results

MGFC36V3742A

Contextual Info: < C band internally matched power GaAs FET > MGFC36V3742A 3.7 – 4.2 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic

FET TH 469

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET M G FC36V3742A ai ThrS i>ä art S~b' 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V3742A is an internally impedance-matched Unit : millimeters (inches) GaAs power FET especially designed for use in 3.7~4.2GHz

MGFC36V3742A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic

MGFC36V3742A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V3742A 3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic

mgfc30

Abstract: MGFC39V5964A
Contextual Info: C BAND INTERNALLY MATCHED GaAs FET M GFCxxVxxxxx Series Typical Characteristics Type Freq. GHz PldB (dBm) GIp mi MGFC36V3742 3 .7 -4 .2 IMG FC36V3742A M GFC36V4460 MGFC36V4460A MGFC38VS258 MGFC36V6964 M G FC36V6964A MGFC36V6471 3 .7 -4 .2 ii 4 .4 -5 .0 10

ST3028

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAsFET> p f c t U MGFC36V3742A a f,oa', îP?C , aK: sU'ti\*C’ T N0ttae' nnHs«to Soi^e ? 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3742A is an internally Unit : millimeters inches OUTLINE DRAWING impedance-matched

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET MG FC36V3742A P R 0 -* 3.7-4.2G HZ BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7—4.2GHz band amplifiers. The hermetically

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 36V 3742 o r p>o<*u c t' ° " Pd '» n lS c o n t v nn u e 3 .7 ' 4.2G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V3742 is an internally impedance-matched GaAs power FET especially designed for use In 3.7 ~ 4.2

MGFC36V3742A

Abstract: 42GH 12api
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V3742A pRÔrîî oot^St«SS^,;Cha"9e' 'C-3^' .u îir t C 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET D ESC RIPTIO N O U TLIN E DRAW IN G The MGFC36V3742A is an internally impedance-matched U n it : m illim eters inch e s)

Contextual Info: MITSUBISHI SEMICONDUCTOR <,GaAs FET MGFC36V3742A 3.7~4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 36V3742A is an internally impedance-matched GaAs power FET especially designed fo r use in 3.7~ 4.2G H z band am plifiers. The hermetically

Contextual Info: < C band internally matched power GaAs FET > MGFC36V3742A 3.7 – 4.2 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

MGF4919G

Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10

MGF4404A

Abstract: MGF4302A MGF2430 MGF4304A MGF4403A 12GHz MGF4301A MGF4402A MGF4401A MGFK25M4045
Contextual Info: - 154 - m f m « € m & m it V K V tè 5e X % I* V* E ft * (V) * * P d /P c h r} # (A) (W) GaAs N D -15 GDO -15 0 900m D MW PA GaAs N D -15 GDO -15 0 900m D 5 MGF2445 MW PA GaAs N D -15 GDO -15 0 1.4 D 10 MGF4301A MW LN A GaAs N D -4 GDO -4 0 60m D