MGFC36V6471 Search Results
MGFC36V6471 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MGFC36V6471 | Unknown | High Frequency Device Data Book (Japanese) | Scan | 53.9KB | 1 | ||
| MGFC36V6471 | Unknown | FET Data Book | Scan | 80.42KB | 2 |
MGFC36V6471 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
mgfc30
Abstract: MGFC39V5964A
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OCR Scan |
mgfc36v3742fc36v3742agfc36v4460mgfc36v4460a+4 | |
MGFC36V6471Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> «« prod^0" MGFC36V6471 6 .4 ~ 7 .2 G H z BAND 4 W INTERNA LLY MATCHED GaAs FET DESCRIPTION The M G F C 3 6 V 6 4 7 1 is an internally impedance-matched GaAs power F E T especially designed fo r use in 6 .4 ~ 7 .2 G H z band amplifiers. The herm etically sealed metal-ceramic |
OCR Scan |
mgfc36v6471 | |
MGF4404A
Abstract: MGF4302A MGF2430 MGF4304A MGF4403A 12GHz MGF4301A MGF4402A MGF4401A MGFK25M4045
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OCR Scan |
mgf2430mgf2430amgf2445mgf4301a+12 | |
MGFC36V6471
Abstract: MGFC36V5964 MGFC36V4450
|
OCR Scan |
mgfc36vxxxxmgfc36v5258-01mgfc36v5258-51mgfc36v5964-01+8 |