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    Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V5964A P R E L ยป 5.9~6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9~6.4GHz band amplifiers. The


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    mgfc36v5964a96ctyp45dbc10mhz PDF