MGFC36V4450A Search Results

MGFC36V4450A

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic

MGFC36V4450A

Abstract: MGFC36V4450
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic

Contextual Info: < C band internally matched power GaAs FET > MGFC36V4450A 4.4 – 5.0 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic

ID11

Contextual Info: < C band internally matched power GaAs FET > MGFC36V4450A 4.4 – 5.0 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic

MGFC36V4450A

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V4450A 4.4-5-OGHz BAND 4W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N The M G FC 36V4450A is an internally O U T L IN E D R A W IN G impedance-matched GaAs power FET especially designed fo r use in 4.4 ~5 .0 G H z

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET MGFC36V4450A 4.4-5 .OGHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V4450A is an internally impedance-matched U n it: millimeters inches) GaAs power FET especially designed for use in 4.4~5.0GHz

Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V4450A 4.4-5.0GHZ BAND 4W INTERNALLY MATCHED GaAs FET D E S C R IP T IO N GaAs power FET especially designed for use in 4.4~5.0GHz band amplifiers. The hermetically sealed U n it: millimeters (inches) O U T L IN E D R A W IN G

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

MGF4919G

Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10

MGF4937

Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Contextual Info: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed

MGFS45H2201G

Abstract: MGFS40H2201G MGF0909A sirio mgfc36v-a QVC12 MGF1907A MGF4961 mgf4941al mitsubishi mgf
Contextual Info: GaAs DEVICES GENERAL CATALOG MITSUBISHI GaAs solutions for communication networks in the information era. Multimedia Network 1 PRODUCTS 3 APPLICATION 7 PACKAGE 9 BS / CS PDC/GSM/CDMA Multimedia Network WiMAX Features We e provide provide a variety variety